Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Abstract: A rectifier (107) includes a rectifying MOSFET (101) that performs synchronous rectification, a control circuit (106) that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET (101) to determine an ON or OFF state of the rectifying MOSFET (101) based on the inputted voltage, and a capacitor (104) that supplies power to the control circuit (106). The control circuit (106) includes a blocking circuit (105) that inputs the voltage across the pair of main terminals of the rectifying MOSFET (101), to block power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is lower than the first voltage.

Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.

Abstract: By detecting a temperature abnormality of a power semiconductor by using the power semiconductor as a temperature sensor, it is possible to detect deterioration and an abnormality of elements, a drive circuit and a cooling system, prevent a failure during an operation by taking an appropriate measure in advance, and make a system operational life long. More specifically, a power converting device which includes the power semiconductor and an arithmetic operation circuit which gives a drive instruction to the power semiconductor detects the temperature abnormality of the power semiconductor based on the drive instruction of the power semiconductor and a delay time of a control drive voltage applied to the power semiconductor to protect the power converting device.

Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.

Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Abstract: A rectifier 107 includes a rectifying MOSFET 101 that performs synchronous rectification, a control circuit 106 that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET 101 to determine an ON or OFF state of the rectifying MOSFET 101 based on the inputted voltage, and a capacitor 104 that supplies power to the control circuit 106. The control circuit 106 includes a blocking circuit 105 that inputs the voltage across the pair of main terminals of the rectifying MOSFET 101, to block power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is lower than the first voltage.