Abstract: An object of the invention is to provide a metal nanoparticle array structure in which metal nanoparticle arrays are firmly bonded to the substrate thereof via chemical bonding or the like and in which the coverage with the metal nanoparticle arrays is high. The problem can be solved by using a metal nanoparticle array structure 10 that comprises a substrate 1, a immobilizing layer 2 formed on one surface 1a of the substrate 1, and metal nanoparticle arrays 3 formed on one surface 2a of the immobilizing layer 2, wherein the metal nanoparticle arrays 3 are so arrayed that multiple metal nanoparticles 4 can be at regular intervals and the metal nanoparticles 4 are bonded to each other via the modifying part 5 arranged on a surface thereof while the metal nanoparticles 4 are immobilized on one surface 2a of the immobilizing layer 2 via chemical bonds.

Abstract: The object can be attained by the near-field light microchannel structure 61 that comprises a structure 95 provided with a microchannel 41c and a near-field light two-dimensional array 50 arranged inside the microchannel 41c and enabling in-plane near-field light generating, in which the near-field light two-dimensional array 50 comprises an electroconductive layer 6 formed on the inner wall surface of the microchannel 41c, a immobilizing layer 2 immobilized on one surface 6a of the electroconductive layer 6 via chemical bonding, and metal nanoparticle arrays 3 immobilized on one surface 2a of the immobilizing layer 2 via chemical bonding, and in which the metal nanoparticle arrays 3 each comprise multiple metal nanoparticles 4 arrayed at regular intervals and bonded to each other via the modifying part 5 arranged on the surface thereof.

Abstract: The invention provides a large-area near field light two-dimensional array firmly immobilized on a substrate, and an inexpensive method for producing the array. The object is attained by using a near field light two-dimensional array 50 that comprises an electroconductive member 6, an immobilizing layer 2 formed on one surface of the electroconductive member 6 and a plurality of light-scattering particles 4 arranged on one surface 2a of the immobilizing layer 2, and enables in-plane light emission through the near field light from the light-scattering particles 4, in which the light-scattering particles 4 have a particle size of from 1 to 100 nm or less, the light-scattering particles 4 are arrayed in a lattice arrangement and spaced equally from each other, the distance between the adjacent light-scattering particles 4 is not larger than the particle size, and the localized surface plasmon of the light-scattering particles 4 can resonate with external light.

Abstract: The object can be attained by the near-field light microchannel structure 61 that comprises a structure 95 provided with a microchannel 41c and a near-field light two-dimensional array 50 arranged inside the microchannel 41c and enabling in-plane near-field light generating, in which the near-field light two-dimensional array 50 comprises an electroconductive layer 6 formed on the inner wall surface of the microchannel 41c, a immobilizing layer 2 immobilized on one surface 6a of the electroconductive layer 6 via chemical bonding, and metal nanoparticle arrays 3 immobilized on one surface 2a of the immobilizing layer 2 via chemical bonding, and in which the metal nanoparticle arrays 3 each comprise multiple metal nanoparticles 4 arrayed at regular intervals and bonded to each other via the modifying part 5 arranged on the surface thereof.

Abstract: An object of the invention is to provide a metal nanoparticle array structure in which metal nanoparticle arrays are firmly bonded to the substrate thereof via chemical bonding or the like and in which the coverage with the metal nanoparticle arrays is high. The problem can be solved by using a metal nanoparticle array structure 10 that comprises a substrate 1, a immobilizing layer 2 formed on one surface 1a of the substrate 1, and metal nanoparticle arrays 3 formed on one surface 2a of the immobilizing layer 2, wherein the metal nanoparticle arrays 3 are so arrayed that multiple metal nanoparticles 4 can be at regular intervals and the metal nanoparticles 4 are bonded to each other via the modifying part 5 arranged on a surface thereof while the metal nanoparticles 4 are immobilized on one surface 2a of the immobilizing layer 2 via chemical bonds.

Abstract: A method produces a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically. Superimposed doping of a plurality kinds of elements as dopants is performed to a predetermined depth in the case of an elemental semiconductor.

Abstract: A method for producing a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically.