Abstract: A method for manufacturing a semiconductor device that includes forming a ruthenium film on a conductive film formed on a substrate for manufacture of the semiconductor device, wherein the conductive film includes a metal that increases an electrical resistance between the conductive film and the ruthenium film by interfacial diffusion between the conductive film and the ruthenium film, and wherein the method comprises forming the ruthenium film on the conductive film by alternately repeating a plurality of times: forming a ruthenium thin film by supplying a ruthenium raw material gas to the substrate on which the conductive film is formed; and then supplying a boron compound gas to the ruthenium thin film.

Abstract: A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru3(CO)12 and the CO gas from the raw material container through the source line; and controlling a pressure in the source line such that the pressure in the source line is a predetermined first pressure or more, and closing the first valve to stop supplying of Ru3(CO)12 and the CO gas to the chamber.

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

Abstract: A source gas supply method for supplying a source gas to a processing part through a line by a carrier gas is provided. The source gas is generated by vaporizing a film forming source by heating a source container in which the film forming source is stored and a filling gas is filled. The method comprises replacing the filling gas in the source container with a replacement gas that does not deteriorate the source gas, determining whether or not the replacement with the replacement gas has been performed by measuring a pressure in the line using a pressure gauge, and heating the source container and supplying the source gas when it is determined that the replacement with the replacement gas has been performed.

Abstract: A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

Abstract: A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

Abstract: A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

Abstract: An embedding method includes: supplying a ruthenium-containing gas to a process chamber; and embedding ruthenium in a recess, which is formed in an insulating layer formed on a substrate, starting from a bottom portion of the recess using the ruthenium-containing gas, the bottom portion of the recess having a metal layer.

Abstract: A method of etching a film of a workpiece, which includes: measuring a second flow rate of a first gas based on an increase rate of an internal pressure of a first chamber in a state in which a valve is closed and the first gas is supplied into the first chamber at a first flow rate adjusted by a flow rate controller, and calibrating the flow rate controller using the measured second flow rate; supplying a second gas into the first chamber; exhausting the first chamber; supplying a mixed gas of the first and second gases into the first chamber with the workpiece not mounted on a stage; forming a reaction product from the film by supplying the mixed gas into the first chamber with the workpiece mounted on the stage; and removing the reaction product by heating the workpiece with the workpiece accommodated in a second chamber.

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

Abstract: Provided is a method for forming a tungsten film in which a tungsten film is formed on the surface of a substrate, the method including: disposing a substrate having an amorphous layer on the surface thereof inside a treatment container under a depressurized atmosphere; heating the substrate inside the treatment container; and supplying, into the treatment container, WF6 gas which is a tungsten raw material and H2 gas which is a reducing gas, and forming a main tungsten film on the amorphous layer.

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

Abstract: A method of etching a film of a workpiece, which includes: measuring a second flow rate of a first gas based on an increase rate of an internal pressure of a first chamber in a state in which a valve is closed and the first gas is supplied into the first chamber at a first flow rate adjusted by a flow rate controller, and calibrating the flow rate controller using the measured second flow rate; supplying a second gas into the first chamber; exhausting the first chamber; supplying a mixed gas of the first and second gases into the first chamber with the workpiece not mounted on a stage; forming a reaction product from the film by supplying the mixed gas into the first chamber with the workpiece mounted on the stage; and removing the reaction product by heating the workpiece with the workpiece accommodated in a second chamber.

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Abstract: The invention provides a compact and highly reliable electronic apparatus that can be driven by a small-capacity battery, and that can achieve high-speed continuous driving of a load by quickly judging the recovery state of the battery after driving the load. More particularly, the invention provides an electronic apparatus includes a power supply, a load, a load driver for driving the load by the power supply, a power supply state detecter for outputting power supply recovery information by measuring physical quantity of the power supply at predetermined intervals of time after the driving of the load is stopped, and a controller for instructing the load driver to drive the load, based on the power supply recovery information supplied from the power supply state detecter.