Patents by Inventor Kohji Andoh
Kohji Andoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9865749Abstract: A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.Type: GrantFiled: December 7, 2010Date of Patent: January 9, 2018Assignee: Siliconix Technology C. V.Inventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
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Patent number: 7858456Abstract: Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.Type: GrantFiled: April 11, 2006Date of Patent: December 28, 2010Assignee: Siliconix Technology C. V.Inventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
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Patent number: 7196397Abstract: A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.Type: GrantFiled: March 4, 2005Date of Patent: March 27, 2007Assignee: International Rectifier CorporationInventors: Davide Chiola, He Zhi, Kohji Andoh, Daniel M. Kinzer
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Publication number: 20060189107Abstract: Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.Type: ApplicationFiled: April 11, 2006Publication date: August 24, 2006Inventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
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Patent number: 7091572Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.Type: GrantFiled: September 23, 2005Date of Patent: August 15, 2006Assignee: International Rectifier CorporationInventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola
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Patent number: 7071525Abstract: A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.Type: GrantFiled: January 27, 2004Date of Patent: July 4, 2006Assignee: International Rectifier CorporationInventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
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Patent number: 6991943Abstract: A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.Type: GrantFiled: December 4, 2003Date of Patent: January 31, 2006Assignee: International Rectifier CorporationInventors: Kohji Andoh, Davide Chiola
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Publication number: 20060017130Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.Type: ApplicationFiled: September 23, 2005Publication date: January 26, 2006Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola
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Publication number: 20050230777Abstract: A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.Type: ApplicationFiled: March 4, 2005Publication date: October 20, 2005Inventors: Davide Chiola, He Zhi, Kohji Andoh, Daniel Kinzer
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Patent number: 6930371Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.Type: GrantFiled: February 3, 2004Date of Patent: August 16, 2005Assignee: International Rectifier CorporationInventors: Fabio Necco, Davide Chiola, Kohji Andoh
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Patent number: 6927141Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.Type: GrantFiled: August 18, 2003Date of Patent: August 9, 2005Assignee: International Rectifier CorporationInventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Ruo Redda, Davide Chiola
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Publication number: 20050161759Abstract: A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.Type: ApplicationFiled: January 27, 2004Publication date: July 28, 2005Inventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
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Publication number: 20050124085Abstract: A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Kohji Andoh, Davide Chiola
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Patent number: 6855593Abstract: A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.Type: GrantFiled: July 11, 2002Date of Patent: February 15, 2005Assignee: International Rectifier CorporationInventors: Kohji Andoh, Davide Chiola
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Patent number: 6846729Abstract: A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm2) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.Type: GrantFiled: September 25, 2002Date of Patent: January 25, 2005Assignee: International Rectifier CorporationInventors: Kohji Andoh, Davide Chiola, Daniel M. Kinzer
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Publication number: 20040222430Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature- sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.Type: ApplicationFiled: February 3, 2004Publication date: November 11, 2004Applicant: International Rectifier CorporationInventors: Fabio Necco, Davide Chiola, Kohji Andoh
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Publication number: 20040077305Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.Type: ApplicationFiled: August 18, 2003Publication date: April 22, 2004Applicant: International Rectifier CorporationInventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Ruo Redda, Davide Chiola
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Publication number: 20040007723Abstract: A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.Type: ApplicationFiled: July 11, 2002Publication date: January 15, 2004Applicant: International Rectifier Corp.Inventors: Kohji Andoh, Davide Chiola
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Publication number: 20030062585Abstract: A Schottky diode has a barrier height which is adjusted by boron implant through a titanium silicide Schottky contact and into the underlying N− silicon substrate which receives the titanium silicide contact. The implant is a low energy, of about 10 keV (non critical) and a low dose of less than about 1E12 atoms per cm2 (non-critical).Type: ApplicationFiled: September 25, 2002Publication date: April 3, 2003Applicant: International Rectifier Corp.Inventors: Kohji Andoh, Davide Chiola, Daniel M. Kinzer
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Publication number: 20020195613Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.Type: ApplicationFiled: April 2, 2002Publication date: December 26, 2002Applicant: International Rectifier Corp.Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola