Abstract: An optical sensor includes a light-emitting element configured to project light that changes with time; a light-receiving element including a pn junction and configured to directly or indirectly receive the light projected by the light-emitting element; a measuring section configured to measure an electric current generated based on an amount of the light received by the light-receiving element; and a bias application section configured to apply a bias to the light-receiving element, wherein the bias application section, before measuring the electric current generated based on the amount of the light received, applies the bias to the light-receiving element to cause either a forward current that flows when the light-receiving element is turned ON or a breakdown current that flows when the pn junction breaks down to flow through the pn junction.

Abstract: A semiconductor device includes the following: a light measuring instrument disposed opposite the display surface of a display panel provided with a self-emission element, and disposed for measuring the ambient-light illuminance of the display panel; a storage device configured to store a plurality of first measurements measured by the light measuring instrument in synchronization with a synchronizing signal of the display panel during a plurality of first measurement periods that are shorter than an ON/OFF period of the self-emission element; and a calculation unit configured to calculate the light emission illuminance of the self-emission element in accordance with the plurality of first measurements stored in the storage device, and configured to calculate the ambient-light illuminance by subtracting a value based on the light emission illuminance from a second measurement measured by the light measuring instrument during a second measurement period that is longer than the plurality of first measurement pe

Abstract: A proximity sensor comprises a light emitting element configured to emit light; a synchronization signal input unit configured to be input with a synchronization signal which is output from a display device and which indicates a rewrite timing of an image displayed on a display screen; and an emission controller configured to control emission of the light from the light emitting element, wherein the emission controller is configured to cause the light emitting element to start the emission of the light at a start timing set based on the rewrite timing at which rewriting of one of a plurality of scanning lines of the image is caused to start in the specific display region, and an emission time of the light from the light emitting element, and the emission controller is configured to cause the light emitting element to end the emission of the light before the rewrite timing comes.

Abstract: A proximity sensor comprises a light emitting element configured to emit light; a synchronization signal input unit configured to be input with a synchronization signal which is output from a display device and which indicates a rewrite timing of an image displayed on a display screen; and an emission controller configured to control emission of the light from the light emitting element, wherein the emission controller is configured to cause the light emitting element to start the emission of the light at a start timing set based on the rewrite timing at which rewriting of one of a plurality of scanning lines of the image is caused to start in the specific display region, and an emission time of the light from the light emitting element, and the emission controller is configured to cause the light emitting element to end the emission of the light before the rewrite timing comes.

Abstract: An illuminance sensor detects a flicker with higher accuracy than in the related art. The illuminance sensor includes: a light receiving unit that receives light and outputs a current; a flicker measurement counter circuit that performs AD conversion on the current and outputs a first digital signal to a flicker measurement storage device; an illuminance measurement counter circuit that performs AD conversion on the current and outputs a second digital signal to an illuminance measurement storage device; and a flicker detection unit that detects a flicker by analyzing the first digital signal stored in the flicker measurement storage device. A cycle during which the first digital signal is output from the flicker measurement counter circuit is shorter than a cycle during which the second digital signal is output from the illuminance measurement counter circuit.

Abstract: An illuminance sensor detects a flicker with higher accuracy than in the related art. The illuminance sensor includes: a light receiving unit that receives light and outputs a current; a flicker measurement counter circuit that performs AD conversion on the current and outputs a first digital signal to a flicker measurement storage device; an illuminance measurement counter circuit that performs AD conversion on the current and outputs a second digital signal to an illuminance measurement storage device; and a flicker detection unit that detects a flicker by analyzing the first digital signal stored in the flicker measurement storage device. A cycle during which the first digital signal is output from the flicker measurement counter circuit is shorter than a cycle during which the second digital signal is output from the illuminance measurement counter circuit.

Abstract: A proximity sensor includes: a light emitting unit that emits light; a light receiving unit that generates measurement current which includes object reflected light current and non-detection-target-object reflected light current; and an initial calibration execution unit that updates, on the basis of a value of the measurement current, an offset value according to the non-detection-target-object reflected light current, in a case where the value of the measurement current is equal to or less than an initial threshold.

Abstract: A proximity sensor includes: a light emitting unit that emits light; a light receiving unit that generates measurement current which includes object reflected light current and non-detection-target-object reflected light current; and an initial calibration execution unit that updates, on the basis of a value of the measurement current, an offset value according to the non-detection-target-object reflected light current, in a case where the value of the measurement current is equal to or less than an initial threshold.

Abstract: A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.

Abstract: A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.