Patents by Inventor Kohsuke NORO

Kohsuke NORO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240254389
    Abstract: A silicon etching solution containing an organic alkaline compound and water, the silicon etching solution further containing a compound represented by Formula (1) below, wherein a content of the compound represented by Formula (1) is 100 mass ppm or more: where R1 is a single bond or a hydrocarbon group having carbon number from 1 to 5, R2 and R3 are each independently a hydrogen atom, a halogen atom, a hydroxy group, an amino group, an acetyl group, a carboxy group, a silyl group, a boryl group, a nitrile group, a thio group, a seleno group, or a hydrocarbon group having carbon number from 1 to 10, and these groups optionally further have a substituent.
    Type: Application
    Filed: December 22, 2023
    Publication date: August 1, 2024
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yoshiki SEIKE, Tatsuya HITOMI, Kohsuke NORO
  • Publication number: 20240170293
    Abstract: An etching solution has a high etching selectivity of silicon with respect to silicon-germanium and having high stability over time at a treating temperature in surface processing in manufacturing various semiconductor devices, particularly in various silicon composite semiconductor devices containing silicon-germanium. The silicon etching solution contains a compound having at least one carboxy group and having all pKa of 3.5 or more and 13 or less, or a salt thereof; an organic alkali; and water.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 23, 2024
    Applicant: Tokuyama Corporation
    Inventors: Tatsuya Hitomi, Yoshiki Seike, Kohsuke Noro
  • Publication number: 20240170294
    Abstract: In etching of a single crystal silicon substrate having a Si crystal plane ((100) plane, (110) plane, and (111) plane) as a main plane, an etching rate on the (110) plane cannot be sufficiently reduced, and there is room for improvement in an etching rate ratio between the (110) plane and the (111) plane. An object of the present invention is to provide a silicon etching solution having excellent crystal plane isotropy in silicon etching and having a high etching selectivity ratio of silicon to a silicon oxide film. The problem is solved by a silicon etching solution containing: an acid group-containing compound having at least one acid group selected from the group consisting of a carboxy group, a sulfonic acid group, a phosphoric acid group, and a phosphonic acid group, and having pKa of 3.5 or more and 13 or less; a quaternary ammonium hydroxide; an oxidizing agent; and water.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 23, 2024
    Applicant: Tokuyama Corporation
    Inventors: Tatsuya Hitomi, Yoshiki Seike, Kohshiro Okimura, Kohsuke Noro
  • Publication number: 20240112917
    Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium. [Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.
    Type: Application
    Filed: February 8, 2022
    Publication date: April 4, 2024
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yoshiki SEIKE, Manami OSHIO, Naoto NOMURA, Kohsuke NORO, Seiji TONO
  • Publication number: 20240067878
    Abstract: A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.
    Type: Application
    Filed: August 29, 2023
    Publication date: February 29, 2024
    Applicant: TOKUYAMA CORPORATION
    Inventors: Tatsuya HITOMI, Yoshiki SEIKE, Kohsuke NORO, Kohshiro OKIMURA