Patents by Inventor Kohsuke URASHIMA

Kohsuke URASHIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11512214
    Abstract: Disclosed is a composition containing copper particles and organic solvents, in which the organic solvents include a first organic solvent having a vapor pressure at 20° C. of 200 Pa or more and 20 kPa or less, and a second organic solvent having a vapor pressure at 20° C. of 0.5 Pa or more and less than 200 Pa.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: November 29, 2022
    Assignee: SHOWA DENKO MATERIALS CO., LTD.
    Inventors: Kohsuke Urashima, Yoshinori Ejiri, Takaaki Nohdoh, Motoki Yonekura, Ryuji Akebi
  • Publication number: 20200399493
    Abstract: Disclosed is a composition containing copper particles and organic solvents, in which the organic solvents include a first organic solvent having a vapor pressure at 20° C. of 200 Pa or more and 20 kPa or less, and a second organic solvent having a vapor pressure at 20° C. of 0.5 Pa or more and less than 200 Pa.
    Type: Application
    Filed: November 13, 2018
    Publication date: December 24, 2020
    Inventors: Kohsuke URASHIMA, Yoshinori EJIRI, Takaaki NOHDOH, Motoki YONEKURA, Ryuji AKEBI
  • Patent number: 10388608
    Abstract: To provide a manufacturing method capable of manufacturing a high density semiconductor device excellent in transmission between chips at a favorable yield and at low cost. A method for manufacturing a semiconductor device includes an insulating layer forming step of forming an insulating layer 3 having a trench 4 above a substrate 1, a copper layer forming step of forming a copper layer 5a on the insulating layer 3 so as to fill the trench 4, and a removing step of removing the copper layer 5a on the insulating layer 3 by a fly cutting method so as to retain a copper layer part in the trench 4.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: August 20, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Kazuyuki Mitsukura, Masaya Toba, Kenichi Iwashita, Kohsuke Urashima, Kazuhiko Kurafuchi
  • Publication number: 20180337134
    Abstract: To provide a manufacturing method capable of manufacturing a high density semiconductor device excellent in transmission between chips at a favorable yield and at low cost. A method for manufacturing a semiconductor device includes an insulating layer forming step of forming an insulating layer 3 having a trench 4 above a substrate 1, a copper layer forming step of forming a copper layer 5a on the insulating layer 3 so as to fill the trench 4, and a removing step of removing the copper layer 5a on the insulating layer 3 by a fly cutting method so as to retain a copper layer part in the trench 4.
    Type: Application
    Filed: February 9, 2016
    Publication date: November 22, 2018
    Inventors: Kazuyuki MITSUKURA, Masaya TOBA, Kenichi IWASHITA, Kohsuke URASHIMA, Kazuhiko KURAFUCHI
  • Publication number: 20180029121
    Abstract: Copper-containing particles each include: a core particle containing copper; and an organic substance on at least a part of the surface of the core particle, in which a proportion of copper-containing particles having a major-axis length of 50 nm or less is 55% by number or less with respect to the total number of the copper-containing particles.
    Type: Application
    Filed: February 23, 2016
    Publication date: February 1, 2018
    Inventors: Kohsuke URASHIMA, Motoki YONEKURA, Yasushi KUMASHIRO