Patents by Inventor Kohtaroh KOGA

Kohtaroh KOGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON WAFER AND EPITAXIAL SILICON WAFER
    Publication number: 20230132859
    Abstract: A silicon wafer is provided in which a dopant is phosphorus, resistivity is 1.2 m?·cm or less, and carbon concentration is 3.5×1015 atoms/cm3 or more. The carbon concentration is decreased by 10% or more near a surface of the silicon wafer compared with a center-depth of the silicon wafer.
    Type: Application
    Filed: November 3, 2022
    Publication date: May 4, 2023
    Applicant: SUMCO CORPORATION
    Inventors: Kohtaroh KOGA, Yasuhito NARUSHIMA, Naoya NONAKA
  • SILICON WAFER AND EPITAXIAL SILICON WAFER
    Publication number: 20230133472
    Abstract: A silicon wafer is provided in which a dopant is phosphorus, resistivity is from 0.5 m?·cm to 1.2 m?·cm, and carbon concentration is 3.0×1016 atoms/cm3 or more. The carbon concentration is decreased by 10% or more near a surface of the silicon wafer compared with a center-depth of the silicon wafer.
    Type: Application
    Filed: June 29, 2022
    Publication date: May 4, 2023
    Applicant: SUMCO CORPORATION
    Inventors: Kohtaroh KOGA, Yasuhito NARUSHIMA, Naoya NONAKA, Toshiaki ONO, Masataka HOURAI