Abstract: A demodulation apparatus according to the present disclosure includes an analog audio demodulator, a digital audio demodulator, a selection circuit, and a noise addition circuit. The analog audio demodulator demodulates a received signal of an analog radio broadcast wave into an analog audio signal and outputs the analog audio signal. The digital audio demodulator demodulates a received signal of a digital radio broadcast wave into a digital audio signal and outputs the digital audio signal, the analog/digital radio broadcast waves including audio signals indicative of a same content and being broadcasted simultaneously. The selection circuit selects either the analog audio signal or the digital audio signal. The noise addition circuit adds noise to the digital audio signal in a first period including a switching period for switching from a state where the analog audio signal is selected to a state where the digital audio signal is selected.

Abstract: A demodulation apparatus according to the present disclosure includes an analog audio demodulator, a digital audio demodulator, a selection circuit, and a noise addition circuit. The analog audio demodulator demodulates a received signal of an analog radio broadcast wave into an analog audio signal and outputs the analog audio signal. The digital audio demodulator demodulates a received signal of a digital radio broadcast wave into a digital audio signal and outputs the digital audio signal, the analog/digital radio broadcast waves including audio signals indicative of a same content and being broadcasted simultaneously. The selection circuit selects either the analog audio signal or the digital audio signal. The noise addition circuit adds noise to the digital audio signal in a first period including a switching period for switching from a state where the analog audio signal is selected to a state where the digital audio signal is selected.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: In a state where a wafer is held by a wafer holding section and a temperature controlled liquid is discharged to a rim area on a rear face of the wafer from flow channels, a developing solution is heaped on a front face of the wafer. Thereafter, the wafer is rotated for a predetermined period of time in a state where the temperature controlled liquid is discharged to the rim area on the rear face of the wafer from the flow channels, whereby developing is performed. The wafer is heated by the wafer holding section with a large heat capacity in an area close to a center of the wafer, and a liquid film of the temperature controlled liquid is formed in the rim area of the wafer, whereby the wafer is heated. At this time, the wafer is rotated, so that the developing solution is stirred.