Abstract: The present invention provides a new method for producing a lens to be fitted to an eye in a simple manner at a low cost. In order to achieve the aforementioned object, the present invention provides a method for producing a lens to be fitted to an eye, including the step of: hydrophilizing a surface of a polymer lens by reacting with a compound radical, wherein the compound radical is a radical containing one element selected from the group consisting of Group 15 elements and Group 16 elements, and a Group 17 element.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including, in a first semiconductor substrate, a sensor pixel that performs photoelectric conversion; a second substrate including, in a second semiconductor substrate, a readout circuit that outputs a pixel signal based on charges outputted from the sensor pixel, in which the second substrate is stacked on the first substrate; and a first hydrogen diffusion prevention layer provided between the first semiconductor substrate and the second semiconductor substrate.

Abstract: A photodetection that alleviates restrictions on a pixel layout in each pixel and capable of being miniaturized is provided. A photodetection device as provided includes a first substrate including a first semiconductor layer with a first surface and a second surface on a side opposite to the first surface, first and second charge accumulation sections provided on the first surface side, a first photoelectric conversion section in the first semiconductor layer, and first and second voltage application sections that apply a voltage to the first semiconductor layer between the first and second charge accumulation sections and the first photoelectric conversion section, and a second substrate including a second semiconductor layer with a third surface and a fourth surface on a side opposite to the third surface and is bonded to the first substrate, and a first pixel transistor on the third or fourth surface that outputs a pixel signal.

Abstract: There is provided a solid-state imaging element capable of increasing a channel area of a pixel transistor and reducing a parasitic capacitance of a gate.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including, in a first semiconductor substrate, a sensor pixel that performs photoelectric conversion; a second substrate including, in a second semiconductor substrate, a readout circuit that outputs a pixel signal based on charges outputted from the sensor pixel, in which the second substrate is stacked on the first substrate; and a first hydrogen diffusion prevention layer provided between the first semiconductor substrate and the second semiconductor substrate.

Abstract: Provided is an inexpensive keratoconjunctival cover sheet that is comfortable and has good oxygen-permeability, contamination-resistance, wettability, handleability, and optical properties, and that can be used for medical treatment, visual correction, a cosmetic application, and the like. The keratoconjunctival cover sheet is constituted by a gel layer that includes metal ions and a water-soluble gelling agent exhibiting a gelation ability in the presence of the metal ions, and has a surface area capable of covering a cornea or keratoconjunctiva.

Abstract: The present invention provides a new method for producing a lens to be fitted to an eye in a simple manner at a low cost. In order to achieve the aforementioned object, the present invention provides a method for producing a lens to be fitted to an eye, including the step of: hydrophilizing a surface of a polymer lens by reacting with a compound radical, wherein the compound radical is a radical containing one element selected from the group consisting of Group 15 elements and Group 16 elements, and a Group 17 element.

Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

Abstract: An imaging device is provided includes a plurality of pixels (200-1). A pixel (200-1) of the plurality of pixels includes: a first wiring coupled to a floating diffusion (221); a second wiring opposed to the first wiring such that a wiring capacitance (Cfd-vsl) is formed; a pixel amplifier (214) with a feedback capacitance that is based on the wiring capacitance; and a vertical signal line (22) arranged to output a signal from the floating diffusion. The wiring capacitance is formed between the floating diffusion and the vertical signal line.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.