Abstract: A substrate processing apparatus comprises a power storage part and at least one unit or member that uses a power. Charges stored in the power storage part are supplied, as a power, to the unit or the member.

Abstract: A mobile device (10) is a mobile device (10) that operates in order to image a subject (5), the mobile device (10) including an imaging unit (13), a sensor (14) that recognizes a surrounding environment, and a light emitting unit (15) disposed on a housing (12) in a ring shape or on the entire surface of the housing (12). The operation of the mobile device (10) includes imaging, based on a set photographing plan, with the imaging unit (13), the subject (5) recognized by the sensor (14) as the mobile device (10) moves. The light emitting unit (15) performs a light emission expression corresponding to at least one of the photographing plan and the operation of the mobile device (10).

Abstract: A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device, including an application unit that applies a voltage signal to the power semiconductor device, a light detection unit that detects light from the power semiconductor device at a plurality of detection positions and outputs detection signals based on detection results, and a determination unit that determines the quality of the power semiconductor device based on temporal changes of the detection signals.

Abstract: Provided are light-emitting particles having high stability while having perovskite-type semiconductor nanocrystals having excellent light-emitting properties, a method for producing the same, and a light-emitting particle dispersion, an ink composition, and a light-emitting element containing such light-emitting particles. The method for producing light-emitting particles of the present invention includes a step of preparing parent particles 91 each having hollow particles 912 each having an inner space 912a and pores 912b communicating with the inner space 912a, and perovskite-type semiconductor nanocrystals 911 contained in the inner space 912a and having light-emitting properties, and a step of coating the surface of each parent particle 91 with a hydrophobic polymer to form a polymer layer 92.

Abstract: The present disclosure includes a question creating section 21 configured to create a question for a drinking user to answer; an output section 11 configured to present the user with the question; an input section 11 configured to receive an operation by the user of inputting an answer to the question; and a computation section 22 configured to determine an intoxication degree of the user's on the basis of the answer.

Abstract: Provided are light-emitting particles having high stability while having perovskite-type semiconductor nanocrystals having excellent light-emitting properties, a method for producing the same, and a light-emitting particle dispersion, an ink composition, and a light-emitting element containing such light-emitting particles. The method for producing light-emitting particles of the present invention includes a step of preparing parent particles 91 composed of perovskite-type semiconductor nanocrystals 911 having light-emitting properties and a surface layer 912 which is composed of ligands coordinated on the surface of the semiconductor nanocrystal 911 and in which the ligand molecules form a siloxane bond with each other, and a step of forming a polymer layer 93 by coating the surface of the parent particle 91 with a hydrophobic polymer.

Abstract: An optical device (10) includes a first substrate (11) and a second substrate (12) facing each other, a liquid crystal component (13) between the first substrate (11) and the second substrate (12), a first electrode (18) and a second electrode (19) located on the first substrate (11) on the second substrate (12) side, and a first alignment layer (14) that is located on the first substrate (11) on the second substrate (12) side and controls the alignment state of liquid crystal molecules in the liquid crystal component (13), wherein an interface between the liquid crystal component (13) and the first alignment layer (14) forms a non-glide weak anchoring interface (17).

Abstract: An optical device (10) includes a first substrate (11) and a second substrate (12) facing each other, a liquid crystal component (13) between the first substrate (11) and the second substrate (12), a first electrode (18) and a second electrode (19) located on the first substrate (11) on the second substrate (12) side, and a first alignment layer (14) that is located on the first substrate (11) on the second substrate (12) side and controls the alignment state of liquid crystal molecules in the liquid crystal component (13), wherein an interface between the liquid crystal component (13) and the first alignment layer (14) forms a non-glide weak anchoring interface (17).

Abstract: To achieve miniaturization while ensuring high functionality. Included are a lens unit that includes at least one lens; an imaging element that performs photoelectric conversion of an optical image of a subject captured by the lens; a battery attachment part to which a battery is attached; a display panel on which an image or video is displayed; a main substrate that controls at least the lens unit; and an antenna substrate having a communication function, in which the lens unit, the battery attachment part, the imaging element, and the display panel are arranged side by side or separately from each other in an optical axis direction of the lens, and in a case where a direction orthogonal to the optical axis direction is defined as an arrangement direction, the main substrate, the lens, and the antenna substrate are arranged side by side or separately from each other in the arrangement direction.

Abstract: A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device, including an application unit that applies a voltage signal to the power semiconductor device, a light detection unit that detects light from the power semiconductor device at a plurality of detection positions and outputs detection signals based on detection results, and a determination unit that determines the quality of the power semiconductor device based on temporal changes of the detection signals.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a first conductivity-type region, a second conductivity-type source region, a gate insulating film and a gate electrode. The first conductivity-type region is provided in an upper layer portion of the semiconductor substrate. The second conductivity-type source region and a second conductivity-type drain region are arranged by being separated from each other in an upper layer portion of the first conductivity-type region. The gate insulating film is provided on the semiconductor substrate. The gate electrode is provided on the gate insulating film. An effective concentration of impurities in a channel region corresponding to a region directly below the gate electrode in the first conductivity-type region has a maximum at an interface between the gate insulating film and the channel region, and decreases toward a lower part of the channel region.

Abstract: According to one embodiment, a power semiconductor system includes; a first power semiconductor element, a driver IC, a first temperature detection element, a control circuit and an overheat protection control section. The first power semiconductor element controls current flowing between a first electrode and a second electrode with a control electrode. The driver IC supplies a drive signal making the first power semiconductor element on and off. The first temperature detection element detects a temperature of the driver IC. The control circuit supplies a control signal for controlling operation of the driver IC to the driver IC. The overheat protection control section is configured to supply an overheat protection signal to the control circuit based on an output of the first temperature detection element. The control circuit performs overheat protection operation. The overheat protection control section supplies the overheat protection signal to the control circuit.

Abstract: There is provided a semiconductor device having a switching element, including a first semiconductor layer including a first, second and third surfaces, a first electrode connected to the first semiconductor layer, a plurality of second semiconductor layers selectively configured on the first surface, a third semiconductor layer configured on the second semiconductor layer, a second electrode configured to be contacted with the second semiconductor layer and the third semiconductor layer, a gate electrode formed over the first semiconductor layer, a first region including a first tale region, a density distribution of crystalline defects being gradually increased therein, a peak region crossing a current path applying to a forward direction in a p-n junction, a second tale region continued from the peak region, and a second region including a third tale region, the density distribution of the crystalline defects being gradually increased therein.

Abstract: A receiving section receives a supply request for product from a terminal set up at a shop or a terminal used by a client. A first determination processing section determines whether a product in stock can be reserved for an order. A first reserve processing section reserves the product in stock for the order when the first determination processing section determines that the product can be reserved. A second determination processing section determines whether a semifinished product necessary for manufacturing a final product can be reserved when the first determination processing section determines that the product reserve is inadequate. A second reserve processing section reserves the semifinished product for the order when the second determination processing section determines that the semifinished product can be reserved.

Abstract: According to one embodiment, a semiconductor device includes a base layer of a second conductivity type, a device isolation layer, a control electrode, a high dielectric layer, a first main electrode, and a second main electrode. The base layer includes a source region of a first conductivity type and a drain region of the first conductivity type. The source region and the drain region are selectively formed on a surface of the base layer. The device isolation layer is provided in the base layer to be extended in a direction from the source region to the drain region. The control electrode is provided on a top side of the device isolation layer to control a current passage between the source region and the drain region. The high dielectric layer is arranged in at least a part on a top side of the base layer or in at least a part in the device isolation layer. The high dielectric layer has a higher dielectric constant than a dielectric constant of the device isolation layer.

Abstract: A rubber composition containing (i) a conjugated diene-based rubber gel having a toluene swelling index of 16 to 70, (ii) a diene-based rubber such as natural rubber, polyisoprene rubber, aromatic vinyl-conjugated diene copolymer rubber and/or polybutadiene rubber, and (iii) an optional carbon black and/or silica and (a) a pneumatic tire using this composition as a high hardness reinforcing layer extending from a bead along a tire sidewalls, in which the fluidity and dimensional stability at the time of extrusion are improved, while maintaining a sufficient hardness of a high hardness reinforced rubber, (b) a pneumatic tire using this composition as two ends of a tire tread extrudate, maintaining a flex fatigue of the two ends of the tread, in which the extrudability and extrusion dimensional stability are improved and (c) a pneumatic tire using the composition as a 1.

Abstract: There is provided a semiconductor device having a switching element, including a first semiconductor layer including a first, second and third surfaces, a first electrode connected to the first semiconductor layer, a plurality of second semiconductor layers selectively configured on the first surface, a third semiconductor layer configured on the second semiconductor layer, a second electrode configured to be contacted with the second semiconductor layer and the third semiconductor layer, a gate electrode formed over the first semiconductor layer, a first region including a first tale region, a density distribution of crystalline defects being gradually increased therein, a peak region crossing a current path applying to a forward direction in a p-n junction, a second tale region continued from the peak region, and a second region including a third tale region, the density distribution of the crystalline defects being gradually increased therein.

Abstract: A semiconductor apparatus includes, a first switching device; a rectifying device; a control circuit controlling the first switching device; a first driving terminal; a first interconnection connecting the first switching device to the first driving terminal; and a second interconnection. The second interconnection is disposed to connect the rectifying device to the first driving terminal, and the second interconnection has a mutual inductance with the first interconnection.

Abstract: A receiving section receives a supply request for product from a terminal set up at a shop or a terminal used by a client. A first determination processing section determines whether a product in stock can be reserved for an order. A first reserve processing section reserves the product in stock for the order when the first determination processing section determines that the product can be reserved. A second determination processing section determines whether a semifinished product necessary for manufacturing a final product can be reserved when the first determination processing section determines that the product reserve is impossible. A second reserve processing section reserves the semifinished product for the order when the second determination processing section determines that the semifinished product can be reserved.

Abstract: A conjugated diene rubber composition comprising (A) 5-95 wt. % of a conjugated diene rubber having a structure such that at least three conjugated diene polymer chains are bonded together through a specific polyorganosiloxane having groups containing alkylene glycol repeating units and (B) 95-5 wt. % of a conjugated diene rubber having reacted with a compound having in the molecule a functional group selected from >C?O, >C?S, amino, imino, epoxy, pyridyl, alkoxyl and halogeno. This rubber composition gives, when silica is incorporated therein, a vulcanizable rubber composition having good processability and giving a rubber vulcanizate exhibiting sufficiently reduced heat build up, and having good wet-grip property and good abrasion resistance.