Patents by Inventor Koichi Furuyama

Koichi Furuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180230603
    Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1?xRux)O3 film and a PZT film formed on the first Sr(Ti1?xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01?x?0.
    Type: Application
    Filed: April 18, 2018
    Publication date: August 16, 2018
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Koichi FURUYAMA
  • Patent number: 9976219
    Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3 film and a PZT film formed on the first Sr(Ti1-xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01?x?0.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: May 22, 2018
    Assignee: YOUTEC CO., LTD.
    Inventors: Takeshi Kijima, Yuuji Honda, Koichi Furuyama
  • Patent number: 9887348
    Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: February 6, 2018
    Assignee: YOUTEC CO., LTD.
    Inventors: Takeshi Kijima, Yuuji Honda, Koichi Furuyama
  • Publication number: 20150236244
    Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 20, 2015
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Koichi FURUYAMA
  • Publication number: 20150232346
    Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3 film and a PZT film formed on the first Sr(Ti1-xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01?x?0.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 20, 2015
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Koichi FURUYAMA
  • Patent number: 7960901
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: June 14, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7956519
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: June 7, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20100289384
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Application
    Filed: April 26, 2010
    Publication date: November 18, 2010
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7825569
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: November 2, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20100207492
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Application
    Filed: April 26, 2010
    Publication date: August 19, 2010
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20090230821
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Application
    Filed: April 10, 2009
    Publication date: September 17, 2009
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20080159939
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Application
    Filed: December 6, 2007
    Publication date: July 3, 2008
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7323257
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: January 29, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7205056
    Abstract: A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: April 17, 2007
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7138013
    Abstract: A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: November 21, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20060120940
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Application
    Filed: December 23, 2005
    Publication date: June 8, 2006
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20060051601
    Abstract: A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 9, 2006
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7008669
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: March 7, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Publication number: 20030213426
    Abstract: A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.
    Type: Application
    Filed: June 19, 2003
    Publication date: November 20, 2003
    Applicant: Seiko Epson Corporation
    Inventors: Eiji Natori, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 6602344
    Abstract: A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: August 5, 2003
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Koichi Furuyama, Yuzo Tasaki