Abstract: A light emitting device includes a plurality of light emitting units located side by side on a single substrate and each emitting light independently. Each of the plurality of light emitting units includes an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, a p-side contact electrode, and a p-side junction electrode. The n-type semiconductor layer and the p-type semiconductor layer of the plurality of light emitting units are respectively provided in an n-type semiconductor film and a p-type semiconductor film, which are single continuous films commonly used for the plurality of light emitting units. An n-side junction electrode is commonly connected to the n-type semiconductor layers of the plurality of light emitting units. The width of the p-side contact electrode is smaller than the width of the p-side junction electrode.

Abstract: A monolithic type LED display element includes: an n-layer; an active layer; a p-layer; an n-electrode; and p-electrodes, regions of the active layer facing the p-electrodes serve as light-emitting portions, and at least one of the p-electrodes or the n-electrode includes a low-reflection layer in which a transparent conductive film containing a transparent conductive oxide and a light-transmitting metal film capable of transmitting light are alternately laminated.

Abstract: A first intermediate layer is a semiconductor layer provided on a first active layer, and is positioned between the first active layer and a second active layer. The first intermediate layer is structured so that a non-doped layer and an n-type layer are laminated in the order from the first active layer side. A second intermediate layer is a semiconductor layer provided on the second active layer, and is positioned between the second active layer and the third active layer. The second intermediate layer is structured so that a non-doped layer and an n-type layer are laminated in the order from the second active layer side.

Abstract: A light emitting device includes plural light emitting elements arranged on a substrate in lines and individually emit light each other. The light emitting device includes a single continuous n-type semiconductor layer on the substrate shared by the plural light emitting elements, a single continuous light emitting layer on the n-type semiconductor layer shared by the plural light emitting elements, a single continuous p-type semiconductor layer on the light emitting layer shared by the plural light emitting elements, a single continuous contact electrode film on the p-type semiconductor layer shared by the plural light emitting elements, and plural p-side bonding electrodes on the contact electrode film respectively used for the plural light emitting elements. The contact electrode film and the p-type semiconductor layer are configured so as to control current diffusion in in-plane directions thereof.

Abstract: The present invention provides a LED display having a simplified driving circuit while preventing defective images. The light-emitting element has a pixel light-emitting part corresponding to one pixel. The pixel light-emitting part has three subpixel light-emitting parts. Each of the subpixel light-emitting parts has a first partial light-emitting part and a second partial light-emitting part connected in parallel. The first partial light-emitting part has a p-electrode. The second partial light-emitting part has a p-electrode. The driving circuit has one transistor for one subpixel light-emitting part. One electrode of the transistor is electrically connected to the first partial light-emitting part through the p-electrode and the second partial light-emitting part through the p-electrode.

Abstract: The present invention provides a LED display miniaturized while suppressing bonding failure of electrode. A micro-LED element includes a substrate, a semiconductor layer, a p-electrode, and an n-electrode. The semiconductor layer has a plurality of light-emitting parts arranged in a matrix and having a light-emitting layer. The p-electrodes are arranged in a matrix corresponding to the positions of the light-emitting parts. The n-electrode is disposed annularly surrounding the light-emitting parts and the p-electrodes. The semiconductor layer has a central part and an outer peripheral part. The outer peripheral part has a p-type semiconductor layer.

Abstract: A first light emission region includes an n-type contact layer, a first light-emitting layer, a p-type contact layer, and a wavelength conversion layer. The second light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, and a p-type contact layer. The third light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, a second intermediate layer, a third light-emitting layer, and a p-type contact layer. The wavelength conversion layer is disposed between the p-type contact layer of the first light emission region and the driving circuit substrate.

Abstract: The present invention provides a flip-chip mounted monolithic micro LED having improved contrast. The light-emitting device includes a substrate, an n-type layer, a light-emitting layer, a p-type layer, a transparent electrode, a p-electrode, an n-electrode, a protective film, an absorbing structure, and a side wall insulating film. The absorbing structure is a layered body in which a dielectric film and a metal film are alternately deposited, and the top layer is a dielectric film. Reflected light of light emitted from the light-emitting layer or reflected light of light from the outside, or transmitted light from the backside of the substrate can be absorbed by the absorbing structure, thereby improving contrast.

Abstract: A first light emission region includes an n-type contact layer, a first light-emitting layer, a p-type contact layer, and a wavelength conversion layer. The second light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, and a p-type contact layer. The third light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, a second intermediate layer, a third light-emitting layer, and a p-type contact layer. The wavelength conversion layer is disposed between the p-type contact layer of the first light emission region and the driving circuit substrate.

Abstract: A light emitting element includes a substrate and a first light emitting part and a second light emitting part arranged thereon to emit different colored lights. The first light emitting part includes a first laminate structure where a n-type semiconductor film and a first semiconductor film are laminated, a first capping film and a p-type semiconductor film laminated on the first laminate structure. The second light emitting part includes a second laminate structure where the n-type semiconductor film, the first semiconductor film, a first intermediate film, and a second semiconductor film are laminated, a second capping film and the p-type semiconductor film laminated on the second laminate structure, the first capping film being the first intermediate film. A bandgap of the first intermediate film is higher than the first semiconductor film and the second semiconductor film. The bandgap of the second semiconductor film is lower than the first semiconductor film.

Abstract: A light emitting device includes plural light emitting elements arranged on a substrate in lines and individually emit light each other. The light emitting device includes a single continuous n-type semiconductor layer on the substrate shared by the plural light emitting elements, a single continuous light emitting layer on the n-type semiconductor layer shared by the plural light emitting elements, a single continuous p-type semiconductor layer on the light emitting layer shared by the plural light emitting elements, a single continuous contact electrode film on the p-type semiconductor layer shared by the plural light emitting elements, and plural p-side bonding electrodes on the contact electrode film respectively used for the plural light emitting elements. The contact electrode film and the p-type semiconductor layer are configured so as to control current diffusion in in-plane directions thereof.

Abstract: The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.

Abstract: The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.

Abstract: The light-emitting device of the present technique includes a substrate, a Group III nitride semiconductor layer disposed on the substrate, a current-blocking layer disposed on the Group III nitride semiconductor layer, a transparent conductive oxide film disposed on the Group III nitride semiconductor layer and the current-blocking layer, a dielectric film covering the Group III nitride semiconductor layer and at least a part of the transparent conductive oxide film, and a phosphor-containing resin coating disposed on the dielectric film. The Group III nitride semiconductor layer has a refractive index greater than that of the transparent conductive oxide film. The transparent conductive oxide film has a refractive index greater than that of the dielectric film. The dielectric film has a refractive index greater than that of the phosphor-containing resin coating. The current-blocking layer has a refractive index smaller than that of the phosphor-containing resin coating.

Abstract: A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Abstract: There is provided a Group III nitride semiconductor light-emitting device with a large light emission amount when a substrate has a rectangular shape. The light-emitting device comprises a rectangular substrate having a first long side, a second long side, a first short side, and a second short side; an n-type contact layer on the substrate; a plurality of n-dot electrodes ND on the n-type contact layer; a first line having a part of the n-dot electrodes ND arranged along the first long side; and a second line having a remaining part of the n-dot electrodes ND arranged along the second long side. A plurality of n-dot electrodes ND belong to either the first line or the second line. The n-dot electrodes ND belonging to the first line and the n-dot electrodes ND belonging to the second line are alternately arranged so as not to oppose each other.

Abstract: A light emitting device includes a double-sided electrode type semiconductor light emitting element that has a first electrode formed on a front side of the double-sided type semiconductor light emitting element and a second electrode formed on a rear side of the double sided type semiconductor light emitting element and is configured to emit light from a side wall surface of the double-sided electrode type semiconductor light emitting element, a first lead frame that is bonded to a whole area of one face of the first electrode, a second lead frame that is bonded to a whole area of one face of the second electrode, and a case in which a portion of the first lead frame and a portion of the second lead frame is embedded.

Abstract: Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which attains suitable light extraction to the outside by reflecting the light directed from a substrate to a semiconductor layer toward the substrate, and a production method therefor. The light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of dielectric multilayer films. The dielectric multilayer films are disposed on the first surface of the substrate. The first surface of the substrate has at least a bottom surface. The buffer layer is formed on at least a part of the bottom surface. The dielectric multilayer films have inclined planes inclined to the bottom surface. The n-type semiconductor layer is formed on the buffer layer and the inclined planes of the dielectric multilayer films.

Abstract: A light emitting device includes a double-sided electrode type semiconductor light emitting element that has a first electrode formed on a front side of the double-sided type semiconductor light emitting element and a second electrode formed on a rear side of the double sided type semiconductor light emitting element and is configured to emit light from a side wall surface of the double-sided electrode type semiconductor light emitting element, a first lead frame that is bonded to a whole area of one face of the first electrode, a second lead frame that is bonded to a whole area of one face of the second electrode, and a case in which a portion of the first lead frame and a portion of the second lead frame is embedded,