Abstract: There is provided a technique that includes: a process vessel in which a substrate is processed; a lid capable of closing an opening provided at a lower portion of the process vessel; an elevator capable of elevating and lowering the lid; a heat insulator provided between the lid and the substrate and comprising a case of a cylindrical shape with a closed upper end; and a cooling gas supplier configured to purge an inside of the heat insulator by supplying a purge gas through a discharge port in the case while the opening is closed by the lid, and to cool the heat insulator by supplying a cooling gas through the discharge port while the opening is not closed by the lid.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A high-strength steel sheet of the present invention has a specific chemical composition. Furthermore, in the steel sheet, a degree of Mn segregation in a specific region is 1.5 or less; a maximum P concentration in a specific region is 0.08 mass % or less; in a specific region, at least one specific MnS particle group is present, the number of specific MnS particle groups is 2.0 or fewer per 1 mm2, and the number of specific oxide-based inclusions is 8 or fewer per 1 mm2; of all oxide-based inclusions, oxide-based inclusions having a specific composition are present in a number ratio of 80% or greater; the microstructure includes, in terms of a volume fraction, 30 to 95% martensite, 5 to 70% ferrite phase, less than 30% (and 0% or greater) bainite, and less than 2.0% (and 0% or greater) austenite phase; and a tensile strength is 980 MPa or greater.

Abstract: A battery includes: a power generation element including battery cells which are electrically connected in parallel and stacked, and each of which includes an electrode layer, a counter-electrode layer, and a solid electrolyte layer located between the electrode layer and the counter-electrode layer; an electrode insulating layer covering an electrode layer among the electrode layers at a side surface of the power generation element; and a counter-electrode terminal covering the side surface and the electrode insulating layer, and electrically connected to a counter-electrode layer among the counter-electrode layers.

Abstract: A battery includes: a power generation element including battery cells each of which includes an electrode layer, a counter-electrode layer, and a solid electrolyte layer located between the electrode layer and the counter-electrode layer, and which are electrically connected in parallel and stacked; an insulating member covering an electrode layer at a side surface of the power generation element; and a terminal electrode covering the side surface and the insulating member, and electrically connected to a counter-electrode layer, in which the power generation element includes: a first parallel unit that includes first battery cells and has both ends in a stacking direction at each of which a counter-electrode layer is located; and a second parallel unit that includes second battery cells, has both ends in the stacking direction at each of which an electrode layers is located, and is stacked on the first parallel unit.

Abstract: A battery includes battery cells. A battery cell includes a positive electrode active material layer, a negative electrode active material layer, and a solid electrolyte layer disposed between the positive electrode active material layer and the negative electrode active material layer. On a side surface of the battery cell, in a plan view of the side surface of the battery cell, striated cut marks which are inclined with respect to the thickness direction of the battery cell are provided.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: A sewing machine presser foot includes a support part having a support base member, and a roller part including a plurality of rotating members rotatably supported at the support base member and having different diameters so that the roller part is conical as a whole. Each of the plurality of rotating members individually rotates and presses a fabric to be sewn.

Abstract: A sewing machine presser foot includes a support part having a support base member, and a roller part including a plurality of rotating members rotatably supported at the support base member and having different diameters so that the roller part is conical as a whole. Each of the plurality of rotating members individually rotates and presses a fabric to be sewn.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: A needle plate replacement device including positioning mechanisms provided in an opposing manner in the needle plate and the bed portion, the positioning mechanisms positioning the needle plate to an attaching position in the bed portion; a lock mechanism including a locking member provided in the bed portion and a locked member provided in the needle plate, in which by mounting the needle plate on the attaching position in the bed portion, the locking member and the locked member is locked to each other thus maintaining a locked state; a push-up mechanism provided in the bed portion, the push-up mechanism pushing up the needle plate mounted on the bed portion towards a dismount position above the bed portion; and a release mechanism cancelling the locked state between the locking member and the locked member of the lock mechanism by being interlocked with an operation of the push-up mechanism.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: A needle plate replacement device including positioning mechanisms provided in an opposing manner in the needle plate and the bed portion, the positioning mechanisms positioning the needle plate to an attaching position in the bed portion; a lock mechanism including a locking member provided in the bed portion and a locked member provided in the needle plate, in which by mounting the needle plate on the attaching position in the bed portion, the locking member and the locked member is locked to each other thus maintaining a locked state; a push-up mechanism provided in the bed portion, the push-up mechanism pushing up the needle plate mounted on the bed portion towards a dismount position above the bed portion; and a release mechanism cancelling the locked state between the locking member and the locked member of the lock mechanism by being interlocked with an operation of the push-up mechanism.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.