Abstract: There is provided a technique that includes: a process vessel in which a substrate is processed; a lid capable of closing an opening provided at a lower portion of the process vessel; an elevator capable of elevating and lowering the lid; a heat insulator provided between the lid and the substrate and comprising a case of a cylindrical shape with a closed upper end; and a cooling gas supplier configured to purge an inside of the heat insulator by supplying a purge gas through a discharge port in the case while the opening is closed by the lid, and to cool the heat insulator by supplying a cooling gas through the discharge port while the opening is not closed by the lid.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: A sewing machine presser foot includes a support part having a support base member, and a roller part including a plurality of rotating members rotatably supported at the support base member and having different diameters so that the roller part is conical as a whole. Each of the plurality of rotating members individually rotates and presses a fabric to be sewn.

Abstract: A sewing machine presser foot includes a support part having a support base member, and a roller part including a plurality of rotating members rotatably supported at the support base member and having different diameters so that the roller part is conical as a whole. Each of the plurality of rotating members individually rotates and presses a fabric to be sewn.

Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: A needle plate replacement device including positioning mechanisms provided in an opposing manner in the needle plate and the bed portion, the positioning mechanisms positioning the needle plate to an attaching position in the bed portion; a lock mechanism including a locking member provided in the bed portion and a locked member provided in the needle plate, in which by mounting the needle plate on the attaching position in the bed portion, the locking member and the locked member is locked to each other thus maintaining a locked state; a push-up mechanism provided in the bed portion, the push-up mechanism pushing up the needle plate mounted on the bed portion towards a dismount position above the bed portion; and a release mechanism cancelling the locked state between the locking member and the locked member of the lock mechanism by being interlocked with an operation of the push-up mechanism.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: A needle plate replacement device including positioning mechanisms provided in an opposing manner in the needle plate and the bed portion, the positioning mechanisms positioning the needle plate to an attaching position in the bed portion; a lock mechanism including a locking member provided in the bed portion and a locked member provided in the needle plate, in which by mounting the needle plate on the attaching position in the bed portion, the locking member and the locked member is locked to each other thus maintaining a locked state; a push-up mechanism provided in the bed portion, the push-up mechanism pushing up the needle plate mounted on the bed portion towards a dismount position above the bed portion; and a release mechanism cancelling the locked state between the locking member and the locked member of the lock mechanism by being interlocked with an operation of the push-up mechanism.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: A light-emitting diode lighting apparatus includes a light source including plural grouped light-emitting diodes, plural lighting circuit parts to perform lighting control of the respective grouped light-emitting diodes of the light source individually, and a dimming control part that inputs a dimming signal from a dimming part and controls an output of each of the lighting circuit parts according to the dimming signal, and sequentially changes, when a dimming gradation is changed, outputs of the plural lighting circuit parts to new gradations in one period of the dimming signal.

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: A substrate processing apparatus which stably supplies a vaporized gas of liquid raw material to a processing chamber includes liquid raw material tanks storing a liquid raw material, a carrier gas supply line supplying a carrier gas to one of the tanks, a raw material supply line pressure-feeding to this tank the liquid raw material of the other tank, a carrier gas supply line feeding a carrier gas to the tank, a raw material supply line feeding to the processing chamber a vaporized gas of the liquid raw material of the tank, a mass flow controller which controls the flow rate of the carrier gas, a mass flow controller detecting the flow rate of the vaporized gas of the liquid raw material, and a feedback device feeding back a detection result of the mass flow controller to the former mass flow controller.

Abstract: Disclosed is a substrate processing apparatus, including a processing chamber to accommodate substrates therein; a heating unit to heat the substrates; a gas supply system to supply desired processing gas into the processing chamber; an exhaust system to exhaust an atmosphere in the processing chamber; and a control section, wherein the gas supply system includes: a plurality of gas nozzles to supply gas obtained by vaporizing one material which is liquid at room temperature and atmospheric pressure to different positions in the processing chamber; and a plurality of vaporizing units, which are respectively in communication with the plurality of gas nozzles, each to vaporize the material, and the control section controls amounts of vaporization of the material in the plurality of vaporizing units individually.