Abstract: A production line monitoring system for monitoring a production line including a plurality of production devices is provided. The production line monitoring system includes: a plurality of terminals attached to a plurality of workers; and a server configured to communicate with the plurality of terminals via a wireless network. The server performs processing of receiving operation information about the production device and generating event information based on the operation information, processing of transmitting the event information to a first terminal and a second terminal of the plurality of terminals, and processing of transmitting event stop information to the second terminal when receiving response information transmitted from the first terminal after performing the processing of transmitting the event information.

Abstract: According to the present invention, a desired one of multiple beams can be aligned with a small-diameter aperture quickly. A multi-electron beam inspection apparatus includes a beam selection aperture substrate including a first passage hole that passes all the multiple electron beams, a second passage hole through which one of the multiple electron beams is able to pass, a first slit, and a second slit not parallel to the first slit, an aperture moving unit moving the beam selection aperture substrate, a first detector detecting a current of a beam having passed through the first slit and a current of a beam having passed through the second slit, of the multiple electron beams, and a second detector detecting multiple secondary electron beams including reflected electrons, discharged from a substrate, due to application of the multiple electron beams, having passed through the first passage hole, to the substrate. The substrate is inspected based on an output signal from the second detector.

Abstract: According to one embodiment, a light detector includes a conductive layer, a first element, a second element, a first member, a first insulating part, and a second insulating part. The conductive layer includes a first conductive portion and a second conductive portion. The first element includes a first semiconductor layer and a second semiconductor layer. The second element includes a fourth semiconductor layer and a fifth semiconductor layer. The first member is provided between the first element and the second element and electrically connected to the conductive layer. The first member is conductive. The first insulating part is provided between the first element and the first member. The second insulating part is provided between the second element and the first member.

Abstract: A multiple secondary electron beam alignment method includes scanning a plurality of first detection elements of a multi-detector, which are arrayed in a grid, with multiple secondary electron beams emitted from a surface of a target object on a stage, detecting a plurality of beams including a corner beam located at a corner in the multiple secondary electron beams by the multi-detector, calculating a positional relationship between the plurality of beams including the corner beam and a plurality of second detection elements, which have detected the plurality of beams including the corner beam, in the plurality of first detection elements, calculating, based on the positional relationship, a shift amount for aligning the plurality of first detection elements with the multiple secondary electron beams, and moving, using the shift amount, the multi-detector relatively to the multiple secondary electron beams.

Abstract: A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detectio

Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.

Abstract: According to one embodiment, a light detector includes a conductive layer, a first element, a second element, a first member, a first insulating part, and a second insulating part. The conductive layer includes a first conductive portion and a second conductive portion. The first element includes a first semiconductor layer and a second semiconductor layer. The second element includes a fourth semiconductor layer and a fifth semiconductor layer. The first member is provided between the first element and the second element and electrically connected to the conductive layer. The first member is conductive. The first insulating part is provided between the first element and the first member. The second insulating part is provided between the second element and the first member.

Abstract: A multiple beam inspection apparatus includes a multi-detector to detect multiple secondary electron beams generated because a target object is irradiated with multiple primary electron beams, and to include plural detection pixels each receiving irradiation of a corresponding one of the multiple secondary electron beams, and having a region which receives irradiation of a corresponding secondary electron beam and is larger than the irradiation spot size of the corresponding secondary electron beam, a shifting mechanism to shift irradiation positions of the multiple secondary electron beams irradiating the plural detection pixels, a determination circuitry to determine whether sensitivity of at least one of the plural detection pixels is degraded, and a setting circuitry to set, when sensitivity of at least one detection pixel is degraded, irradiation position shifting destinations of multiple secondary electron beams, irradiating the plural detection pixels, to be within respective corresponding same detecti

Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: A multiple beam inspection apparatus includes a multi-detector to detect multiple secondary electron beams generated because a target object is irradiated with multiple primary electron beams, and to include plural detection pixels each receiving irradiation of a corresponding one of the multiple secondary electron beams, and having a region which receives irradiation of a corresponding secondary electron beam and is larger than the irradiation spot size of the corresponding secondary electron beam, a shifting mechanism to shift irradiation positions of the multiple secondary electron beams irradiating the plural detection pixels, a determination circuitry to determine whether sensitivity of at least one of the plural detection pixels is degraded, and a setting circuitry to set, when sensitivity of at least one detection pixel is degraded, irradiation position shifting destinations of multiple secondary electron beams, irradiating the plural detection pixels, to be within respective corresponding same detecti

Abstract: An optical device includes a light-shielding layer and a microlens array. The light-shielding layer includes a plurality of openings. The microlens array is divided into a plurality of microlenses corresponding to the respective plurality of openings. A refractive index of the microlens array is variable so that light is incident on the microlenses is focused on the respective plurality of openings. A portion where light is focused includes a central position of the corresponding opening.

Abstract: An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface of the housing and includes a heat-sensitive pixel region and a reference pixel region. The lid seals the housing and includes a support member and a window member. The support member is bonded to the side surfaces of the housing and has an opening positioned above the heat-sensitive pixel region. The window member is bonded to a surface of the support member on a side of the detector so as to cover the opening. The light shielding film is formed on a surface of the window member on a side of the detector and arranged on an optical path of the infrared rays entering the reference pixel region.

Abstract: An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.

Abstract: An optical device includes a light-shielding layer and a microlens array. The light-shielding layer includes a plurality of openings. The microlens array is divided into a plurality of microlenses corresponding to the respective plurality of openings. A refractive index of the microlens array is variable so that light is incident on the microlenses is focused on the respective plurality of openings. A portion where light is focused includes a central position of the corresponding opening.

Abstract: An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.

Abstract: An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface of the housing and includes a heat-sensitive pixel region and a reference pixel region. The lid seals the housing and includes a support member and a window member. The support member is bonded to the side surfaces of the housing and has an opening positioned above the heat-sensitive pixel region. The window member is bonded to a surface of the support member on a side of the detector so as to cover the opening. The light shielding film is formed on a surface of the window member on a side of the detector and arranged on an optical path of the infrared rays entering the reference pixel region.

Abstract: An exemplary embodiment provides a non-transitory storage medium. The non-transitory storage medium causes the computer of an information processing apparatus capable of communicating with another information processing apparatus to function as a data reception unit configured to receive application data which can be made use of by an application program from another information processing apparatus, a data determination unit configured to determine whether the received application data is data made use of by a first application program executed by the information processing apparatus, and a data conversion unit configured to convert the received application data to application data made use of by the first application program executed by the information processing apparatus when the data determination unit determines that the received application data is not data made use of by the first application program executed by the information processing apparatus.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.