Abstract: A semiconductor device according to the present disclosure includes: a semiconductor substrate including at least: an n-type first semiconductor layer; an n-type second semiconductor layer on the first semiconductor layer; a p-type third semiconductor layer on the second semiconductor layer; and an n-type fourth semiconductor layer on an upper layer part of the third semiconductor layer; a plurality of first trench gates passing through the fourth to second semiconductor layers to reach an inner side of the first semiconductor layer; and a first main electrode having contact with the fourth semiconductor layer; wherein the plurality of first trench gates are disconnected in an electrode extraction region provided in a center part of the active region where main current flows, and are connected to the first main electrode in a first electrode extraction part connected to the first gate electrode in the disconnected part.

Abstract: An IGBT region and a diode region are provided on a semiconductor substrate. The IGBT region includes a plurality of active trenches penetrating through the base layer and the emitter layer from the first principal surface, a gate electrode provided inside the active trenches via a gate insulating film, and an implanted electrode provided inside the active trenches via the gate insulating film and positioned on the second principal surface side of the gate electrode. The diode region includes an anode layer of the second conductive type provided on the first principal surface side of the drift layer, a plurality of diode trenches provided from the first principal surface to the anode layer, and a diode electrode provided inside the diode trenches via a diode insulating film. A depth of the anode layer is deeper than a depth of the diode trenches.

Abstract: An adjacent active trench in an IGBT region and an adjacent capacitance adjustment trench in a diode region are each provided in a stripe shape extending in a Y direction in a plan view. Each of a plurality of crossing trenches extends in an X direction orthogonal to the Y direction in a plan view and is provided in a stripe shape. Each of the plurality of crossing trenches is provided from the adjacent capacitance adjustment trench to the adjacent active trench in a plan view. Therefore, the gate electrode of the adjacent active trench and the capacitance adjustment electrode of the adjacent capacitance adjustment trench are electrically connected via the electrode for the crossing trench in the crossing trench.

Abstract: To obtain a content distribution system in which the load placed on a distribution server is reduced, the installation cost and the operational cost are reduced, introduction can be easily realized in a large area, and clients only wait short periods for playing back. A distribution server device converts a content into stream data using an algorithm of near video on demand, and transmits the stream data to an end-system multicast tree established among plural client devices requesting playback of the content. The client devices relay the received stream data of the near video on demand in accordance with the end-system multicast tree.