Patents by Inventor Koichi Kosaka

Koichi Kosaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Final polishing method for silicon single crystal wafer and silicon single crystal wafer
    Patent number: 8569148
    Abstract: The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: October 29, 2013
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Naoto Iizuka, Hirotaka Kurimoto, Koichi Kosaka, Fumiaki Maruyama
  • FINAL POLISHING METHOD FOR SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER
    Publication number: 20100090314
    Abstract: The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
    Type: Application
    Filed: January 29, 2008
    Publication date: April 15, 2010
    Applicant: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Naoto Iizuka, Hirotaka Kurimoto, Koichi Kosaka, Fumiaki Maruyama
  • Method for deodorizing and refreshing for dry cleaning
    Patent number: 5511264
    Abstract: The present invention provides a method for deodorizing and refreshing petroleum group solvent used in a dry cleaning apparatus, and a dry cleaning apparatus using such a method, which can maintain the circulating solvent in a fresh condition for a long time, eliminate a bad smell of the solvent, provide highly stable cleaning ability and good cleaning finish, and prevent ignition and explosion of the solvent to ensure safety.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: April 30, 1996
    Assignee: Ebara Corporation
    Inventors: Yukiko Nishioka, Ichiro Kamiya, Ryoichi Shinjo, Yoshihiro Ishii, Koichi Kosaka
  • Method for deodorizing and refreshing for dry cleaning and dry cleaning apparatus using such method
    Patent number: 5488842
    Abstract: The present invention provides a method for deodorizing and refreshing petroleum group solvent used in a dry cleaning apparatus, and a dry cleaning apparatus using such a method, which can maintain the circulating solvent in a fresh condition for a long time, eliminate a bad smell of the solvent, provide highly stable cleaning ability and good cleaning finish, and prevent ignition and explosion of the solvent to ensure safety.
    Type: Grant
    Filed: August 24, 1994
    Date of Patent: February 6, 1996
    Assignee: Ebara Corporation
    Inventors: Yukiko Nishioka, Ichiro Kamiya, Ryoichi Shinjo, Yoshihiro Ishii, Koichi Kosaka