Abstract: There is provided a scanning probe microscopy comprising a probe 6 situated to face the surface of an sample 1, a first piezoelectric element 8 for moving the sample 1 and the probe 6 relative to each other in a first direction perpendicular to the surface of the sample, and second and third piezoelectric elements 3 and 4 for moving the probe and the sample relative to each other in second and third directions perpendicular to the first direction, thereby enabling the probe to scan the surface of the sample, wherein at least one of the first to third piezoelectric elements 8, 3 and 4, which is closest to the sample 1, is formed of a single crystal.

Abstract: A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.

Abstract: An organic thin film display element comprises an organic thin film containing donor moleculaes and acceptor molecules and a pulse voltage source for causing a charge transfer between the donor molecules and the acceptor molecules. The charge transfer varies the optical characteristic of the organic thin film, whereby the organic thin film displays an image.

Abstract: An information writing method of an optical recording device selectively irradiates light on an optical recording medium, having a thin organic film containing donor and acceptor molecules, and a pair of electrodes for applying a voltage to the thin organic film, in order to cause charge transfer between the donor and acceptor molecules, and records a change in optical or electric characteristics of the thin organic film by the charge transfer as information. Selective light irradiation is performed while a voltage is applied to the electrodes.

Abstract: A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer of metallic material is formed on the thin film.

Abstract: A light emitting element formed of a metal-insulator-semiconductor junction, the improvement wherein the insulator is a Langmuir-Blodgett film of an organic substance containing at least one of a synthetic protein and a natural protein. According to the element of this invention, stability of dynamic characteristics, luminescence efficiency and long-term stability can be significantly improved.

Abstract: There is interest in the use of solid-solution electrodes as a way of meeting the problems of conventional batteries; Li.sub.a TiS.sub.2 where O.ltoreq.a.ltoreq.1 is known in this respect and may be made by high temperature preparative routes.Fast ion conductors of the formula A.sub.x M.sub.y O.sub.2 where A is Li, Na or K, M is a transition metal e.g. Co or Ni, .ltoreq.x<1 and y.apprxeq.1 have been made for this purpose according to the invention. They cannot be made by high temperature routes when x is substantially less than 1 owing to stability problems. In the invention, they have been made by electrochemical extraction of A.sup.+ ions from compounds of the formula A.sub.x' M.sub.y O.sub.2 where O<x'.ltoreq.1, carried out at low temperature.