Abstract: A semiconductor device includes a semiconductor substrate and a lower electrode. The semiconductor substrate includes a collector region of p-type and a cathode region of n-type being in contact with the lower electrode. The semiconductor substrate has an insulated gate bipolar transistor range overlapping with the collector region when viewed along a thickness direction of the semiconductor substrate, and a diode range overlapping with the cathode region when viewed along the thickness direction of the semiconductor substrate. The semiconductor substrate further includes a buffer region of n-type being in contact with upper surfaces of the collector region and the cathode region, a drift region of n-type being in contact with an upper surface of the buffer region, and a current limiting region of p-type disposed above a boundary between the collector region and the cathode region and being in contact with an upper surface of the buffer region.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: An exposure apparatus includes: light source that emits exposure light; exposure pattern forming apparatus including a plurality of exposure elements and disposed on an optical path of at least part of exposure light; and control unit electrically connected to exposure pattern forming apparatus, in which control unit controls whether workpiece is irradiated with exposure light via each of exposure elements by switching each of exposure elements to a first or second state, and integrates exposure amount in predetermined region of scheduled exposure region by sequentially irradiating predetermined region with light of part of exposure light via a first exposure element in first state among plurality of exposure elements and light of part of exposure light via second exposure element in the first state different from the first exposure element among the plurality of exposure elements in accordance with a relative movement of the workpiece and the exposure pattern forming apparatus.

Abstract: The sensor of a fluid sensor system includes an outer peripheral sensor unit including three or more sensor pairs to surround and sandwich the heating element. The computing device of the system includes a first identification unit identifies a sensor pair in which an output difference between an output value corresponding to a temperature detected by one temperature sensor of the sensor pair and an output value corresponding to a temperature detected by the other temperature sensor of the sensor pair is largest, a second identification unit identifies other sensor pairs adjacent to the identified sensor pair in the circumferential direction, and a flow direction estimation unit estimates the flow direction of the fluid on the basis of the output difference in the sensor pair having the largest output difference and output differences in the other sensor pairs adjacent to the sensor pair in the circumferential direction.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: Provided is an image forming apparatus including a charge processing section and an operation section that are brought closer in height to each other, thus improving the operability of a user. The image forming apparatus (100) includes a coin insertion processing section (110), an operation panel (120) and an electrophotography printer (130). The coin insertion processing section (110) is configured to accept money and then execute charge processing so as to permit image formation by the image forming apparatus (100). The operation panel (120) is configured to, when the coin insertion processing section (110) executes the charge processing, accept setting of image formation by the image forming apparatus (100). The electrophotography printer (130) is configured to form an image of the read image data based on setting at the operation panel (120). The coin insertion processing section (110) is disposed at a height equal to a height of the operation panel (120).

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.

Abstract: Provided is an image forming apparatus including a charge processing section and an operation section that are brought closer in height to each other, thus improving the operability of a user. The image forming apparatus (100) includes a coin insertion processing section (110), an operation panel (120) and an electrophotography printer (130). The coin insertion processing section (110) is configured to accept money and then execute charge processing so as to permit image formation by the image forming apparatus (100). The operation panel (120) is configured to, when the coin insertion processing section (110) executes the charge processing, accept setting of image formation by the image forming apparatus (100). The electrophotography printer (130) is configured to form an image of the read image data based on setting at the operation panel (120). The coin insertion processing section (110) is disposed at a height equal to a height of the operation panel (120).

Abstract: Provided is an image forming apparatus including a charge processing section and an operation section that are brought closer in height to each other, thus improving the operability of a user. An image forming apparatus (100) includes a coin insertion processing section (110), an operation panel (120) and an electrophotography printer (130). The coin insertion processing section (110) is configured to accept money and then execute charge processing so as to permit image formation by the image forming apparatus (100). The operation panel (120) is configured to, when the coin insertion processing section (110) executes the charge processing, accept setting of image formation by the image forming apparatus (100). The electrophotography printer (130) is configured to form an image of the read image data based on setting at the operation panel (120). The coin insertion processing section (110) is disposed at a height equal to a height of the operation panel (120).

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: An upper electrode structure includes a first plate, a second plate and an electrostatic attraction unit. The first plate has a first region, a second region and a third region which are concentrically arranged. Each of the regions is provided with a multiple number of gas discharge openings. The electrostatic attraction unit is provided between the first plate and the second plate and is configured to attract the first plate. The electrostatic attraction unit is equipped with a first to third heaters for the first to third regions. The electrostatic attraction unit and the second plate provide a first supply path, a second supply path and a third supply path through which gases are supplied into the first to third regions, respectively. A first gas diffusion space, a second gas diffusion space and a third gas diffusion space are formed in the electrostatic attraction unit.

Abstract: Screws 4 are inserted from a bottom surface of a ceiling plate 32 and screwed to a base plate 31, and the ceiling plate 32 and the base plate 31 are press-connected to each other by an elastic restoring force of an elastic member 51 interposed between a head of the screw 4 and the ceiling plate 32. A gap is formed between the head and the ceiling plate 32. Further, a periphery of the head is covered with a cover via a ring-shaped elastic member 52. In another embodiment, a periphery of a base plate 31 is protruded from a periphery of a ceiling plate 32, and the protruded portion of the base plate 31 and a ring-shaped clamp positioned at an outer side of the ceiling plate 32 are joined by screws. Here, an elastic member is interposed between the clamp and the ceiling plate 32.