Abstract: A wireless communication system includes a base station to which a plurality of terminal stations are connectable and a control unit that controls the base station.

Abstract: Included are a plurality of base stations to which a plurality of terminal stations are connectable and a control station that controls each of the base stations. The control station includes a network communication unit that receives, from each of the base stations, base station information indicating the base station, wireless environment information indicating a reception signal received by the base station from another of the base stations and a signal intensity thereof, and terminal station information indicating the terminal station connected to the base station and a signal intensity and a calculation unit that calculates, based on the base station information, the wireless environment information, and the terminal station information each received from each of the base stations, connection control information for controlling a connection permission from each of the base stations to each of the terminal stations.

Abstract: Provided is a polyether ether ketone, comprising a repeating unit represented by the following formula (1), the polyether ether ketone having a crystallization temperature Tc of 255° C. or more, and satisfying one or both of the following conditions (A) and (B): (A) a fluorine atom content a is less than 2 mg/kg; and (B) a chlorine atom content b is 2 mg/kg or more.

Abstract: A diffractive optical element includes a unit structure periodically arranged in a first direction and configured to diffract incident light in the first direction. The diffractive optical element has a phase pattern designed such that an angular separation between an outermost diffracted light beam and a second-outermost diffracted light beam along the first direction is smaller than the divergence angle of the incident light.

Abstract: Provided is a polyether ether ketone, comprising a repeating unit represented by the following formula (1), satisfying one or both of the following conditions (A) and (B), and having a hydroxy group at one terminal or both terminals of a main chain of the polyether ether ketone: (A) a fluorine atom content a is less than 2 mg/kg; and (B) a chlorine atom content b is 2 mg/kg or more.

Abstract: A radio communication method of connecting a base station with a plurality of terminal stations, the base station including a plurality of radio communication units compatible with a predetermined communication standard, the method including collecting additional-line information including information regarding whether each terminal station is compatible with additional communication standard; collecting request information including a request in the predetermined communication standard of each terminal station; collecting identifier information that identifies each terminal station; calculating, based on the additional-line information, the request information and the identifier information that are collected, a setting policy including a setting for each radio communication unit, and a switching policy of setting a condition for switching the plurality of radio communication units; and setting, for each radio communication unit, the terminal station to be connected based on the setting policy and the switch

Abstract: A method includes collecting, as environment information, a radio environment represented by a signal received at a plurality of radio communication units from another base station, each of the plurality of radio communication units being switchable between a normal mode in which the radio communication unit performs radio communication as a base station and a subordinate mode in which the radio communication unit performs radio communication as a virtual terminal station, calculating test conduct information for each base station based on base station performance information representing a performance of each base station and the environment information, and conducting an operation test of each base station by, based on the test conduct information, setting any of the radio communication units to the normal mode, switching the radio communication units of the other base station to the subordinate mode, and performing radio communication with each other.

Abstract: A method disclosed herewith is a method for producing a first seamless metal tube with a first wall thickness and a second seamless metal tube with a second wall thickness by using a three-roll-type inclined rolling mill, and the method includes a first inclination rolling step (#5), a setting changing step (#10), and a second inclination rolling step (#15). At the first inclination rolling step, a first workpiece is rolled by the inclined rolling mill. At the setting changing step, a setup condition of the inclined rolling mill is changed in a manner (a) or (b) as described below. At the second inclined rolling step, a second workpiece is rolled by the inclined rolling mill under the changed condition. (a) When the second wall thickness is smaller than the first wall thickness, the cross angle of each of the inclined rolls is made greater than the cross angle set for the first inclination rolling step.

Abstract: A wireless communication system in which wireless stations perform transmission, a plurality of wireless modules that are operated in a shared frequency band being installed in the wireless stations, wherein the wireless stations each include means for notifying a control device of environment information that includes capacity information regarding the wireless station and information regarding a surrounding wireless environment, the control device includes means for determining an operation mode of each wireless module of each wireless station based on the environment information collected from each wireless station, following a control guideline that is determined in advance, and notifying the wireless stations of the operation modes, and the wireless stations each include means for setting the operation modes in the plurality of wireless modules and changing connection of connection destination wireless stations according to the operation modes of the wireless modules, the wireless stations being notified

Abstract: A wireless communication system includes a plurality of wireless base stations and a measurement station, each wireless base station including a wireless communication unit, a wireless information collection unit, and a measurement result collection unit, the measurement station being configured to control the plurality of wireless base stations, wherein the measurement station generates a measurement condition based on wireless environment information collected by the wireless information collection unit of each wireless base station and notifies each wireless base station of a measurement control signal corresponding to the measurement condition, each wireless base station sends traffic addressed to a subordinate wireless terminal station or broadcast traffic at the same time in accordance with the notified measurement control signal, a measurement result collection unit of a wireless base station that is a measurement target measures wireless communication performance and notifies the measurement station o

Abstract: A semiconductor device includes a semiconductor substrate and a lower electrode. The semiconductor substrate includes a collector region of p-type and a cathode region of n-type being in contact with the lower electrode. The semiconductor substrate has an insulated gate bipolar transistor range overlapping with the collector region when viewed along a thickness direction of the semiconductor substrate, and a diode range overlapping with the cathode region when viewed along the thickness direction of the semiconductor substrate. The semiconductor substrate further includes a buffer region of n-type being in contact with upper surfaces of the collector region and the cathode region, a drift region of n-type being in contact with an upper surface of the buffer region, and a current limiting region of p-type disposed above a boundary between the collector region and the cathode region and being in contact with an upper surface of the buffer region.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: An exposure apparatus includes: light source that emits exposure light; exposure pattern forming apparatus including a plurality of exposure elements and disposed on an optical path of at least part of exposure light; and control unit electrically connected to exposure pattern forming apparatus, in which control unit controls whether workpiece is irradiated with exposure light via each of exposure elements by switching each of exposure elements to a first or second state, and integrates exposure amount in predetermined region of scheduled exposure region by sequentially irradiating predetermined region with light of part of exposure light via a first exposure element in first state among plurality of exposure elements and light of part of exposure light via second exposure element in the first state different from the first exposure element among the plurality of exposure elements in accordance with a relative movement of the workpiece and the exposure pattern forming apparatus.

Abstract: The sensor of a fluid sensor system includes an outer peripheral sensor unit including three or more sensor pairs to surround and sandwich the heating element. The computing device of the system includes a first identification unit identifies a sensor pair in which an output difference between an output value corresponding to a temperature detected by one temperature sensor of the sensor pair and an output value corresponding to a temperature detected by the other temperature sensor of the sensor pair is largest, a second identification unit identifies other sensor pairs adjacent to the identified sensor pair in the circumferential direction, and a flow direction estimation unit estimates the flow direction of the fluid on the basis of the output difference in the sensor pair having the largest output difference and output differences in the other sensor pairs adjacent to the sensor pair in the circumferential direction.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.