Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: An apparatus for etching a substrate includes a chamber, a substrate support, a radio frequency (RF) power supply, and a RF filter. The substrate support is disposed in the chamber. The substrate support has an electrode, an electrostatic chuck disposed on the electrode, and a conductive edge ring disposed to surround the substrate placed on the electrostatic chuck. The RF power supply is configured to supply RF power to generate plasma from a gas inside the chamber. The RF filter has a variable impedance. The edge ring and the RF filter are electrically directly connected through a connecting unit.

Abstract: The disclosed plasma processing apparatus is provided with a chamber, a substrate support, and a power source system. The substrate support has an electrode and configured to support a substrate in the chamber. The power source system is electrically connected to the electrode and configured to apply a bias voltage to the electrode to draw ions from a plasma in the chamber into the substrate on the substrate support. The power source system is configured to output a first pulse to the electrode in a first period and output a second pulse to the electrode in a second period after the first period, as the bias voltage. Each of the first pulse and the second pulse is a pulse of a voltage. A voltage level of the first pulse is different from a voltage level of the second pulse.

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

Abstract: A plasma processing apparatus includes a chamber and a substrate support provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The power supply unit applies a second DC voltage to the lower electrode during the generation of plasma from the etching gas in the chamber, to etch the substrate placed on the substrate support. The second DC voltage is a negative DC voltage. The DC voltage output by the power supply unit is continuously switched from the first DC voltage to the second DC voltage.

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: In a method of an embodiment, radio-frequency power is supplied to an electrode via a matching device from a radio-frequency power supply in order to generate plasma within a chamber. During the supply of the radio-frequency power, it is determined whether or not plasma is generated within the chamber from one or more parameters reflecting plasma generation within the chamber. When it is determined that plasma is not generated, a frequency of the radio-frequency power output from the radio-frequency power supply is adjusted to set the load side reactance of the radio-frequency power supply to zero or to bring the load side reactance close to zero.

Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: A plasma processing apparatus includes: a placement table serving as a lower electrode and configured to place thereon a workpiece to be subjected to a plasma processing; a DC power supply configured to alternately generate a positive DC voltage and a negative DC voltage to be applied to the placement table; and a controller configured to control an overall operation of the plasma processing apparatus. The controller is configured to: measure a voltage of the workpiece placed on the placement table; calculate, based on the measured voltage of the workpiece, a potential difference between the placement table and the workpiece in a period during which the negative DC voltage is applied to the placement table; and control the DC power supply such that a value of the negative DC voltage applied to the placement table is shifted by a shift amount that decreases the calculated potential difference.

Abstract: A plasma processing method includes providing a plasma processing apparatus; supplying radio-frequency waves from a radio-frequency power supply; and applying a negative DC voltage to a lower electrode from the at least one DC power supply. In the applying the DC voltage, the DC voltage is cyclically applied to the lower electrode, and in a state where a frequency defining each cycle in which the DC voltage is applied to the lower electrode is set to be lower than 1 MHz, a ratio occupied by a period during which the DC voltage is applied to the lower electrode in the each cycle is regulated.

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

Abstract: In a method of an embodiment, radio-frequency power is supplied to an electrode via a matching device from a radio-frequency power supply in order to generate plasma within a chamber. During the supply of the radio-frequency power, it is determined whether or not plasma is generated within the chamber from one or more parameters reflecting plasma generation within the chamber. When it is determined that plasma is not generated, a frequency of the radio-frequency power output from the radio-frequency power supply is adjusted to set the load side reactance of the radio-frequency power supply to zero or to bring the load side reactance close to zero.