Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: The invention provides an etching method having selectivity of a high-K material such as Al2O3 to polysilicon or hard mask. The present invention provides a method for manufacturing a semiconductor device by etching, using a plasma etching apparatus, a sample including an interlayer insulating layer 14 formed of a high-K material such as Al2O3 of a hard mask 11 and a Poly-Si layer 15 in contact with the interlayer insulating layer, wherein the method includes etching the high-K material 14 using BCl3, He and HBr while setting a temperature of a sample stage to normal temperature and applying a time-modulated high bias voltage, and repeating said etching process and a deposition process using SiCl4, BCl3 and He.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is, the shoulder selection ratio, is increased in an etching treatment of a semiconductor or the like. In the surface treatment method of a semiconductor, in which an inorganic intermediate film and an upper resist film are laminated on a lower resist film, by using plasma, CO2 containing oxygen as a primary component is added to a gas composed of nitrogen and hydrogen, so that an etching gas is prepared. Consequently, cutting of a shoulder of the inorganic intermediate layer film is reduced and a perpendicular shape is attained.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor.