Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: In a crystal growth reactor, a source material having an etching action and a crystal growth source material are simultaneously supplied to a semiconductor wafer surface, so that residual impurities can be eliminated in an efficient manner by balancing etching rate and crystal growth rate.

Abstract: A laser diode 300 includes a p-type GaN guide layer 107, a current confinement layer 314 provided on the p-type GaN guide layer 107 and having an opening 314A formed therein, and a p-type cladding layer 108 provided on the current confinement layer 314 and plugging the opening 314A formed in the current confinement layer 314. An interface between the p-type cladding layer 108 and the p-type GaN guide layer 107 is located in a bottom of the opening 314A. The current confinement layer 314 is a layer of a group III nitride semiconductor, and a width dimension of the opening 314A is minimized in the upper side of the opening 314A.

Abstract: Input ports (103a, 103b) formed from fundamental mode waveguides are provided at one end of a multimode waveguide (104). Further, an output port (105) formed from a fundamental mode waveguide is provided at the other end of the multimode waveguide (104). The multimode waveguide (104) has a width wider than those of the input ports (103a, 103b) and the output port (105), and provides modes including multimode to the waveguide. The multimode waveguide (104) is embedded with a buried layer (200). Both of the end faces of the multimode waveguide (104) are made to be planes equivalent to a (100) plane or planes inclined from these planes. In a case of inclined planes, the planes are made to be planes inclined to a direction that the waveguide region spreads toward a stacked direction of the semiconductor layers.

Abstract: In a crystal growth reactor, a source material having an etching action and a crystal growth source material are simultaneously supplied to a semiconductor wafer surface, so that residual impurities can be eliminated in an efficient manner by balancing etching rate and crystal growth rate.

Abstract: Input ports (103a, 103b) formed from fundamental mode waveguides are provided at one end of a multimode waveguide (104). Further, an output port (105) formed from a fundamental mode waveguide is provided at the other end of the multimode waveguide (104). The multimode waveguide (104) has a width wider than those of the input ports (103a, 103b) and the output port (105), and provides modes including multimode to the waveguide. The multimode waveguide (104) is embedded with a buried layer (200). Both of the end faces of the multimode waveguide (104) are made to be planes equivalent to a (100) plane or planes inclined from these planes. In a case of inclined planes, the planes are made to be planes inclined to a direction that the waveguide region spreads toward a stacked direction of the semiconductor layers.

Abstract: All of a plurality of visible semiconductor light emitting devices, optical waveguides coupled to these visible semiconductor light emitting devices, and a mutiplexer for multiplexing lights from the optical waveguides to prepare multi-wavelength or white light are integrally provided on a single substrate. By virtue of the above construction, a multi-wavelength semiconductor light source can be realized which can reduce the trouble of regulating the optical axis of the optical waveguides and the multiplexer and can contribute to a reduction in cost and a reduction in size.

Abstract: All of a plurality of visible semiconductor light emitting devices, optical waveguides coupled to these visible semiconductor light emitting devices, and a mutiplexer for multiplexing lights from the optical waveguides to prepare multi-wavelength or white light are integrally provided on a single substrate. By virtue of the above construction, a multi-wavelength semiconductor light source can be realized which can reduce the trouble of regulating the optical axis of the optical waveguides and the multiplexer and can contribute to a reduction in cost and a reduction in size.

Abstract: A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.

Abstract: A semiconductor light emitting device has a stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an InP substrate. The p-type clad layer is made from an MgZnSeTe-based compound semiconductor lattice-matched with InP. The n-type clad layer is made from a compound semiconductor lattice-matched with InP and selected from an MgZnSeTe-based compound semiconductor, an MgZnCdSe-based compound semiconductor, and an MgCdSSe-based compound semiconductor.

Abstract: A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.

Abstract: After the removal of a native oxide layer on a surface of an InP substrate, a ZnCdSe buffer layer is grown, and a ZnSeTe layer as a II-VI compound semiconductor layer containing Te is formed on the ZnCdSe buffer layer. This permits the ZnSeTe layer to grow two-dimensionally from directly after the start of growing such that its crystal quality is considerably improved. In this manner, a semiconductor device is attained which has above the InP substrate the II-VI compound semiconductor layer containing Te, which has such a high quality as to permit the semiconductor device to be used as a light emitting device.