Abstract: A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.

Abstract: The network relay device is provided. The network relay device includes: a plurality of ports, each being configured to be connectable with one physical line; a virtual line controller configured to treat a plurality of physical lines, which are respectively connected with the plurality of ports, to constitute a virtual line; and a status check frame controller configured to send via the virtual line a status check frame for use in checking status of a network, which the network relay device is connected with via the virtual line, wherein the status check frame controller changes a frame-sending port to be used to send a next status check frame, in order to avoid continuously using an identical port as both a frame-sending port to send the status check frame and a frame-receiving port to receive the status check frame from another network relay device.

Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Abstract: A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm?3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: An automobile servicing apparatus includes a turntable which is rotatably supported and which is provided with a pair of retractable lift mechanisms. The turntable is also provided with a pair of storing spaces defined below its top surface for supporting thereon an automobile to be serviced. Each of the lift mechanisms is provided with a top flat plate which contacts the underside of the automobile when lifting and which is set in flush with the top surface of the turntable when set in its retracted position. Thus, there is provided a completely flat surface without any big holes when the lift mechanisms are set in their retracted position.

Abstract: A wave-activated power generating apparatus includes a generally L-shaped duct including a vertically extending portion and a horizontally extending portion and a floatable main body fixedly attached to the duct. The floatable main body is provided such that it is located rearwardly of the vertically extending portion of the duct when the apparatus is set in position floating on the water surface. The horizontally extending portion is in fluidic communication with the vertically extending portion and has an open rear end which is submerged underwater in normal operating condition. Because of the particular arrangement of the main body with respect to the vertically extending portion of the duct, the apparatus is subjected to pitching motion vigorously, which allows to obtain an increased power output. In addition, the water column is ejected in the form of a jet stream in the rearward direction, which contributes to mitigate the mooring force requirements.

Abstract: An automobile servicing apparatus according to the present invention is basically defined as a unit module and it includes a turntable having a diameter suitable for placing thereon an automobile to be serviced and provided with a lift mechanism for lifting the automobile above the turntable. A washing unit for washing the bottom of automobile is also provided and it is normally located outside of the turntable. When the turntable is set in orientation such that the guide groove provided in the turntable becomes aligned with the guide groove provided outside of the turntable, the washing unit may be moved along the aligned guide grooves in a reciprocating manner. Also provided is a main motor for driving to rotate the turntable.

Abstract: A wave-activated power generating apparatus in the form of a buoy includes a floatable main body provided with a vertically extending central pipe having its bottom open end opened into the water and its top open end located above the water surface when the main body floats in the water surface, an air turbine disposed at the top open end of the central pipe, a generator operatively coupled to the air turbine, and a plate-shaped guide plate fixedly attached to the main body as located opposite to and separated away from the bottom open end of the central pipe. The provision of the bottom guide plate allows to define a laterally opened circular opening between the guide plate and the bottom of the main body, through which the water moves into and out of the central pipe. This structure allows to use the present apparatus even in shallow waters.