Patents by Inventor Koichi Nishioka

Koichi Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200123110
    Abstract: The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous aripiprazole crystals is stored for an extended period.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Inventors: Takuji BANDO, Satoshi AOKI, Junichi KAWASAKI, Makoto ISHIGAMI, Youichi TANIGUCHI, Tsuyoshi YABUUCHI, Kiyoshi FUJIMOTO, Yoshihiro NISHIOKA, Noriyuki KOBAYASHI, Tsutomu FUJIMURA, Masanori TAKAHASHI, Kaoru ABE, Tomonori NAKAGAWA, Koichi SHINHAMA, Naoto UTSUMI, Michiaki TOMINAGA, Yoshihiro OOI, Shohei YAMADA, Kenji TOMIKAWA
  • Publication number: 20200090719
    Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.
    Type: Application
    Filed: December 28, 2017
    Publication date: March 19, 2020
    Inventors: Koichi NISHIOKA, Tetsuo ENDOH, Shoji IKEDA, Hiroaki HONJO, Hideo SATO, Hideo OHNO
  • Publication number: 20190225584
    Abstract: The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous aripiprazole crystals is stored for an extended period.
    Type: Application
    Filed: October 24, 2018
    Publication date: July 25, 2019
    Inventors: Takuji BANDO, Satoshi AOKI, Junichi KAWASAKI, Makoto ISHIGAMI, Youichi TANIGUCHI, Tsuyoshi YABUUCHI, Kiyoshi FUJIMOTO, Yoshihiro NISHIOKA, Noriyuki KOBAYASHI, Tsutomu FUJIMURA, Masanori TAKAHASHI, Kaoru ABE, Tomonori NAKAGAWA, Koichi SHINHAMA, Naoto UTSUMI, Michiaki TOMINAGA, Yoshihiro OOI, Shohei YAMADA, Kenji TOMIKAWA
  • Publication number: 20190134316
    Abstract: The present invention provides a needle unit configured to be mounted to medical syringe, the needle unit including a needle member having a longitudinally extending inner space and having a needle hole formed in a side surface of a front end and an opening formed in a base end, the inner space being in communication with the outside through the needle hole and the opening, a base portion for supporting the base end of the needle member and communicating between the syringe and the inner space of the needle member by being attached to the syringe, a slide member movable along an outer peripheral surface of the needle member and capable of taking a first position to close the needle hole and a second position to uncover the needle hole in the base end portion side of the first position, a biasing member that biases the slide member from the second position side to the first position side; and a cap removably mounted to the base portion and is configured to cover the needle member.
    Type: Application
    Filed: June 10, 2016
    Publication date: May 9, 2019
    Applicant: OTSUKA PHARMACEUTICAL FACTORY, INC.
    Inventors: Masaki NISHIOKA, Osamu TAKIGUCHI, Katsuyoshi HAMAI, Tetsuya MASUDA, Fujio INOUE, Koichi TAKEDA
  • Patent number: 8879214
    Abstract: In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: November 4, 2014
    Assignee: HGST Netherlands B.V.
    Inventor: Koichi Nishioka
  • Publication number: 20130164549
    Abstract: In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 27, 2013
    Applicant: Hitach Golbal Storage Technologies Netherlands B.V
    Inventor: Koichi Nishioka
  • Patent number: 8351163
    Abstract: According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0?x?15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: January 8, 2013
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koji Sakamoto, Koichi Nishioka
  • Patent number: 8339752
    Abstract: In one embodiment, a magnetic head includes a magnetoresistive free layer, wherein a width of the free layer nearest an air bearing surface (ABS) is less than a width of the free layer at a point away from the ABS in a track width direction, with the magnetic head being configured to pass a sense current in a direction perpendicular to a plane of deposition of the free layer. In another embodiment, a method includes forming a magnetoresistive film above a shield, forming a masking layer above the magnetoresistive film, patterning the masking layer such that it exposes portions of the magnetoresistive film, wherein the masking layer defines an area which is narrow near an area that forms an ABS side of a free layer and wider at an area away from the ABS, and removing the exposed portions of the magnetoresistive film to form the free layer.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: December 25, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Masashi Hattori, Koichi Nishioka, Koji Sakamoto, Tsutomu Yasuda, Hideki Mashima
  • Patent number: 8284526
    Abstract: According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: October 9, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koichi Nishioka, Koji Sakamoto, Tatsumi Hirano
  • Patent number: 8254067
    Abstract: As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 ??m2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: August 28, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koichi Nishioka, Hiroaki Chihaya
  • Patent number: 8064159
    Abstract: One general embodiment of the present invention is a magnetic read head including a magnetoresistive sensor where sense current flows in a stacking direction of the magnetoresistive sensor, i.e., perpendicular to the plane of the layers of the head. The magnetoresistive sensor comprises a free layer having a magnetization direction that is affected by external magnetic fields and includes a Heusler alloy layer and a Co-based amorphous metal layer, a fixed layer which is stacked with the free layer and has a fixed magnetization direction, and a non-magnetic intermediate layer between the free layer and the fixed layer.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: November 22, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koji Sakamoto, Koichi Nishioka, Katsuya Mitsuoka, Katsumi Hoshino, Yo Sato
  • Publication number: 20110141613
    Abstract: According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0?x?15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.
    Type: Application
    Filed: November 17, 2010
    Publication date: June 16, 2011
    Applicant: Hitachi Global Storage Technologies Netherlands B. V.
    Inventors: Koji Sakamoto, Koichi Nishioka
  • Publication number: 20110141606
    Abstract: According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO.
    Type: Application
    Filed: November 29, 2010
    Publication date: June 16, 2011
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koichi Nishioka, Koji Sakamoto, Tatsumi Hirano
  • Patent number: 7957109
    Abstract: A tunnel magnetoresistance effect magnetic head having between magnetic shield layers, an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with the antiferromagnetic layer, an insulating layer, and a free layer whose direction of magnetization rotates relatively to external magnetic fields, wherein the antiferromagnetic layer is of an antiferromagnetic substance composed mainly of IrMn, the pinned layer is made up of a first pinned layer of CoFe alloy in contact with the antiferromagnetic layer and a second pinned layer of CoFeB alloy which is antiferromagnetically coupled with the first pinned layer, and the first and second pinned layers have the amount of magnetization such that the difference M1?M2 is in the range of 0<M2?M1<0.5 (nm·T) and also have the magnetostriction constants such that the difference |?1??2| is no larger than 5.0×10?6.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: June 7, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Naoki Koyama, Koichi Nishioka, Kouji Okazaki, Shuichi Kojima, Azusa Hori, Satoshi Shigematsu, Yukimasa Okada
  • Patent number: 7848064
    Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: December 7, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-Yaung Lee, Jinshan Li, Daniele Mauri, Koichi Nishioka, Yasunari Tajima
  • Publication number: 20100157465
    Abstract: One general embodiment of the present invention is a magnetic read head including a magnetoresistive sensor where sense current flows in a stacking direction of the magnetoresistive sensor, i.e., perpendicular to the plane of the layers of the head. The magnetoresistive sensor comprises a free layer having a magnetization direction that is affected by external magnetic fields and includes a Heusler alloy layer and a Co-based amorphous metal layer, a fixed layer which is stacked with the free layer and has a fixed magnetization direction, and a non-magnetic intermediate layer between the free layer and the fixed layer.
    Type: Application
    Filed: December 18, 2009
    Publication date: June 24, 2010
    Inventors: Koji Sakamoto, Koichi Nishioka, Katsuya Mitsuoka, Katsumi Hoshino, Yo Sato
  • Publication number: 20100103564
    Abstract: As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 ??m2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.
    Type: Application
    Filed: September 21, 2009
    Publication date: April 29, 2010
    Inventors: Koichi Nishioka, Hiroaki Chihaya
  • Patent number: 7623323
    Abstract: Embodiments of the invention provide a reading head structure that ensures a stable magnetic moment of a pinned layer against a great external magnetic field, and minimizes the pinned-layer damage occurring during air-bearing surface machining. In one embodiment, a magnetoresistive head is based on a spin-valve effect and has free layers, a stacked-type pinned layer, and an electroconductive nonmagnetic spacer layer positioned between the free layers and the stacked-type pinned layer. The stacked-type pinned layer includes three ferromagnetic films, and antiferromagnetic coupling films interposed between the ferromagnetic films. Of these ferromagnetic films, the first two films have a high coercivity and a high resistivity. The third ferromagnetic film is made of a material that gives a great magnetoresistive effect. The sum of the magnetic moments generated from the stacked-type pinned layer is substantially zero.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: November 24, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koichi Nishioka, Shuichi Kojima, Koji Kataoka, Takayoshi Ohtsu
  • Publication number: 20080285182
    Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
    Type: Application
    Filed: July 11, 2008
    Publication date: November 20, 2008
    Inventors: Wen-Yaung Lee, Jinshan Li, Daniele Mauri, Koichi Nishioka, Yasunari Tajima
  • Patent number: 7408747
    Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
    Type: Grant
    Filed: February 1, 2005
    Date of Patent: August 5, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-Yaung Lee, Jinshan Li, Daniele Mauri, Koichi Nishioka, Yasunari Tajima