Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Abstract: For implementation of a magnetoresistance effect element having a quadruple interface, a magnetoresistance effect element having a small resistance area product RA, a high magnetoresistance ratio, and a high effective magnetic anisotropy energy density Kefft* is provided. A magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first divided recording layer (2), a second junction layer (12), a second divided recording layer (3), and a third junction layer (13). The first divided recording layer (2) has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kefft).

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements depicted in a rectangular frame and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements depicted in a frameless test area and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: A visual approach-based aptitude testing method executed by a computer includes receiving test data including positions and a number of icons which are selected and applied by an examinee to a check sheet and an examinee's ID, where the check sheet includes a plurality of areas formed by boundary elements and which include graphic figures having no inherent meaning. The computer counts up a total number of the icons in the test data, discriminates whether or not an arrangement of the icons in the data satisfies definitions in tables stored by the computer, and stores results obtained from the discrimination to be used for evaluation of the examinee's aptitude based on the total number of the icons and the arrangement of the icons.

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements depicted in a frameless test area and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements depicted in a rectangular frame and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: A visual approach-based aptitude testing method executed by a computer includes receiving test data including positions and a number of icons which are selected and applied by an examinee to a check sheet and an examinee's ID, where the check sheet includes a plurality of areas formed by boundary elements depicted in a frameless test area and which include graphic figures having no inherent meaning. The computer counts up a total number of the icons in the test data, discriminates whether or not an arrangement of the icons in the data satisfies definitions in tables stored by the computer, and stores results obtained from the discrimination to be used for evaluation of the examinee's aptitude based on the total number of the icons and the arrangement of the icons.

Abstract: A visual approach-based aptitude testing system includes a computer connected to an examinee's terminal through a communication network. The computer provides, to the examinee's terminal, a check sheet in which a plurality of areas are formed by boundary elements and which includes graphic figures each having no inherent meaning, and a plurality of icons applicable to the check sheet. The computer sequentially stores test data including icons applied by the examinee to the check sheet and an examinee's ID transmitted from the terminal, and sequentially reads out the test data and the examinee's ID to count a total number of the icons. The computer executes discrimination of whether the arrangement of the icons in the read-out test data falls under definitions in tables stored by the computer. Results of the discrimination are stored in the computer and used for evaluation of the examinee's aptitude.

Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Abstract: In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.

Abstract: In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.

Abstract: According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0?x?15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.

Abstract: In one embodiment, a magnetic head includes a magnetoresistive free layer, wherein a width of the free layer nearest an air bearing surface (ABS) is less than a width of the free layer at a point away from the ABS in a track width direction, with the magnetic head being configured to pass a sense current in a direction perpendicular to a plane of deposition of the free layer. In another embodiment, a method includes forming a magnetoresistive film above a shield, forming a masking layer above the magnetoresistive film, patterning the masking layer such that it exposes portions of the magnetoresistive film, wherein the masking layer defines an area which is narrow near an area that forms an ABS side of a free layer and wider at an area away from the ABS, and removing the exposed portions of the magnetoresistive film to form the free layer.

Abstract: According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO.

Abstract: As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 ??m2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.