Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.

Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.

Abstract: A distance measurement sensor that detects a distance to an object based on heterodyne detection using light generated from a light source and another light received by a light receiver, includes: a scanning unit which scans the light in a first direction; a diffusing lens which diffuses the light in a second direction; multiplexers which multiplex the light and the another light to provide optical signals, respectively; and a processor which detects the distance to the object based on the optical signals. The light receiver has light receiving antennas in the second direction. The multiplexers are connected to the light receiving antennas, respectively. The processor performs a parallel processing for detecting the distance to the object based on the optical signals with respect to the light receiving antennas individually.

Abstract: A distance measuring device includes: a modulated light output unit configured to output a modulated light; a transmitting scanner configured to emit an input light, which is one branched light of the modulated light, as an emitted light; a receiving scanner into which the emitted light reflected by a target object is incident as an incident light, the receiving scanner outputting the incident light as a reflected light; and a measuring unit configured to measure a distance to the target object by combining the reflected light and a reference light which is the other branched light of the modulated light. The modulated light output unit outputs at least two modulated lights having modulation frequencies different from each other by chirping the modulation frequencies to approach each other.

Abstract: An optical scanner includes a substrate, an optical phased array, a shape sensor, a deviation calculation unit, and a control unit. The optical phased array includes an antenna array having a plurality of antenna elements. The deviation calculation unit calculates an amount of positional deviation of each antenna element based on an amount of deformation of the substrate detected by the shape sensor, and calculates an amount of phase deviation of light emitted from each antenna element. The control unit corrects the phase of light emitted from each antenna element based on the amount of phase deviation calculated by the deviation calculation unit, and controls the phase of the antenna element so that the antenna array emits the light in a target direction.

Abstract: A distance measuring sensor includes: a light source having a semiconductor optical amplifier and a resonator with a silicon photonic circuit, which are at a semiconductor substrate; a plurality of emitters, each emitter configured to emit a light beam generated by the light source to outside of the light source; a scanner configured to perform scanning with the light beam by enabling the light beam emitted from the light source to be reflected at a mirror and vibrating the mirror; an optical receiver configured to receive a reflected light beam, which is generated by the light beam reflected at the object; and a processor configured to measure the distance to the object based on the reflected light beam received at the optical receiver. Light beams respectively emitted from the emitters are incident on the mirror in different directions. The scanner performs scanning different regions with the respective light beams.

Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

Abstract: A beam deflection system includes 2M laser light sources configured to emit laser lights, each laser light source being configured to switch two different center wavelengths to each other. The 2M laser light sources are divided into two sets of M types. The laser lights emitted from the two sets of M types of laser light sources are combined and input to a beam deflector. When (i) N is defined as an integer satisfying an expression of “1?N?M”, and (ii) center wavelengths of Nth laser light sources of the two sets of M laser light sources are defined as ?N and ?M+N, an expression of “?1< . . . <?N< . . . <?M<?M+1< . . . <?M+N< . . . <?2M” is satisfied.

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: A compact ink drying apparatus is capable of drying ink ejected to a resin substrate. The ink drying apparatus has a hot air dryer, a hot air supplying part, and an exhausting part. The hot air dryer has a drying furnace, a substrate conveying path formed as a spirally shaped path in the drying furnace, and substrate drying ducts blowing hot air to a surface of a resin substrate on which ink is ejected conveyed along the substrate conveying path to heat ink and exhausting water vapor generated by heating of ink. The hot air supplying part is outside the drying furnace and supplies hot air into the substrate drying ducts, and the exhausting part is outside the drying furnace and exhausts air in the drying furnace through the substrate drying ducts.

Abstract: A distance measurement sensor that detects a distance to an object based on heterodyne detection using light generated from a light source and another light received by a light receiver, includes: a scanning unit which scans the light in a first direction; a diffusing lens which diffuses the light in a second direction; multiplexers which multiplex the light and the another light to provide optical signals, respectively; and a processor which detects the distance to the object based on the optical signals. The light receiver has light receiving antennas in the second direction. The multiplexers are connected to the light receiving antennas, respectively. The processor performs a parallel processing for detecting the distance to the object based on the optical signals with respect to the light receiving antennas individually.

Abstract: A compact ink drying apparatus is capable of drying ink ejected to a resin substrate. The ink drying apparatus has a hot air dryer, a hot air supplying part, and an exhausting part. The hot air dryer has a drying furnace, a substrate conveying path formed as a spirally shaped path in the drying furnace, and substrate drying ducts blowing hot air to a surface of a resin substrate on which ink is ejected conveyed along the substrate conveying path to heat ink and exhausting water vapor generated by heating of ink. The hot air supplying part is outside the drying furnace and supplies hot air into the substrate drying ducts, and the exhausting part is outside the drying furnace and exhausts air in the drying furnace through the substrate drying ducts.

Abstract: A reflector has a reflective surface on first and second directions. Each of torsion beams extends to each opposite side of the reflective surface in the first direction. Each of coupling portions is to each opposite side of the reflector in the first direction and includes a central portion with U-shape having two projection portions and a bottom portion joined to the torsion beam. The projection portions include first concave portions opposing across the torsion beam by being penetrated in thickness direction. Each first concave portion extends in the second direction from an opening to a side surface facing the torsion beam towards an opposite side surface up to a bottom. A distance between the bottoms of the first concave portions across the torsion beam is greater than a distance between the side surfaces each facing the torsion beam of the projection portions.

Abstract: A distance measuring sensor includes: a light source having a semiconductor optical amplifier and a resonator with a silicon photonic circuit, which are at a semiconductor substrate; a plurality of emitters, each emitter configured to emit a light beam generated by the light source to outside of the light source; a scanner configured to perform scanning with the light beam by enabling the light beam emitted from the light source to be reflected at a mirror and vibrating the mirror; an optical receiver configured to receive a reflected light beam, which is generated by the light beam reflected at the object; and a processor configured to measure the distance to the object based on the reflected light beam received at the optical receiver. Light beams respectively emitted from the emitters are incident on the mirror in different directions. The scanner performs scanning different regions with the respective light beams.

Abstract: A variable focus mirror includes a base portion, a first piezoelectric element, a reflection surface portion, and a second piezoelectric element. The base portion has a plate shape with a recessed portion on a back surface. The first piezoelectric element is arranged on a front surface of the base portion where the recessed portion is arranged. The reflection surface portion is arranged on the first piezoelectric element. The reflection surface portion is arranged opposite to the base portion with respect to the first piezoelectric element. The second piezoelectric element is arranged on the front surface of the base portion. The second piezoelectric element covers the part of the base portion where the recessed portion is arranged and the part of the base portion outside the recessed portion. The second piezoelectric element is separated from the first piezoelectric element.

Abstract: An optical scanner includes a substrate having a rigid body and a beam, and a layered body having multiple layers, including a lower conductive layer, a interlayer insulation film and an upper conductive layer, the layered body layered on and protruding outward from the rigid body and the beam. The layered body is patterned to form a resonance scanner portion and a vari-focal mirror, the resonance scanner portion (i) made as a part of the layered body and (ii) having an actuator part, and the vari-focal mirror made as a part of the layered body. The layered body including the resonance scanner portion and the vari-focal mirror is patterned to form a mirror driving wire. In such structure, the size of the optical scanner is reduced, and a frequency change of the resonance scanner portion due to the voltage application to the mirror driving wire is suppressed.

Abstract: A reflector has a reflective surface on first and second directions. Each of torsion beams extends to each opposite side of the reflective surface in the first direction. Each of coupling portions is to each opposite side of the reflector in the first direction and includes a central portion with U-shape having two projection portions and a bottom portion joined to the torsion beam. The projection portions include first concave portions opposing across the torsion beam by being penetrated in thickness direction. Each first concave portion extends in the second direction from an opening to a side surface facing the torsion beam towards an opposite side surface up to a bottom. A distance between the bottoms of the first concave portions across the torsion beam is greater than a distance between the side surfaces each facing the torsion beam of the projection portions.

Abstract: An optical scanner includes a substrate having a rigid body and a beam, and a layered body having multiple layers, including a lower conductive layer, a interlayer insulation film and an upper conductive layer, the layered body layered on and protruding outward from the rigid body and the beam. The layered body is patterned to form a resonance scanner portion and a vari-focal mirror, the resonance scanner portion (i) made as a part of the layered body and (ii) having an actuator part, and the vari-focal mirror made as a part of the layered body. The layered body including the resonance scanner portion and the vari-focal mirror is patterned to form a mirror driving wire. In such structure, the size of the optical scanner is reduced, and a frequency change of the resonance scanner portion due to the voltage application to the mirror driving wire is suppressed.