Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N?/4??/6 to N?/4??/6, where ? represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: For plasma generation, an impedance matching device and a process of controlling and detecting the impedance matching device are provided to satisfy a preset matching condition. The impedance matching device includes a tubular external conductor and an internal conductor disposed therein, a matching device body including a plurality of dielectrics, a moving mechanism, a storing unit for storing a data table, a measuring device, and a calculation control unit. The impedance detecting process includes inputting a progressive wave and a reflected wave outputted by a directional coupler connected to an object to be matched, generating different signals, and mixing the signals to determine relative phase differences and amplitude ratios of the signals, and detecting an input impedance of the object to be matched on a basis of the detected amplitude ratios and that of a true phase difference between the progressive wave and the reflected wave that is detected by referring to a relationship prepared in advance.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N&lgr;/4−&lgr;/6 to N&lgr;/4−&lgr;/6, where &lgr; represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.