Abstract: A jig for heat treatment of a workpiece capable of use over a long period of time by minimizing or eliminating deformation thereof caused by thermal distortion and which is capable of performing heat treatment of the workpiece by reducing the amount of heat energy absorbed by the jig in a heat-treatment furnace. The jig includes an outer peripheral frame formed by a plurality of members and a mounting portion arranged inside the outer peripheral frame and also formed by a plurality of members. The workpiece rests on the mounting portion during use. The members of the outer peripheral frame and mounting portion are movably connected to each other with an expansion space being provided between each adjacent member capable of absorbing thermal expansion of the member during thermal treatment.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.

Abstract: A high-frequency circuit device includes a substrate and a high-frequency circuit. The high-frequency circuit is provided on the substrate and has a signal line. The signal line is configured with a slot line provided by electrodes that are arranged side-by-side with a space therebetween on the substrate. The slot line can facilitates circuit design compared to a microstrip line and has significantly low conduction loss compared to a coplanar line, and can improve the Q-value of the high frequency circuit. This can provide an improved high-frequency circuit device having small phase noise. The high-frequency circuit device, which also serves as an oscillator, employs a slot output and thus can provide an advantage of better continuity for a class-B push-pull amplifier that operates more efficiently than a class-A one.

Abstract: A high-frequency oscillation circuit includes a resonance circuit and an active circuit. The active circuit includes a field-effect transistor and a capacitor. An impedance-conversion circuit including a high-impedance line, a capacitive stub, and a connecting line such as wire, is connected between the active circuit and the resonance circuit. Accordingly, the impedance-conversion circuit can convert the characteristic impedance of the resonance circuit so that the absolute value of the reflection coefficient of the active circuit increases. As a result, the oscillation conditions can be easily fulfilled.

Abstract: An imaging apparatus is provided with an imaging element for outputting both a color signal of high-power image data and a color signal of low-power image data; gamma correcting means for gamma-correcting the high-power image data and for gamma-correcting the low-power image data; image synthesizing means for adding the high-power image data which has been gamma-corrected by the gamma correcting means to the low-power image data which has been gamma-corrected by the gamma correcting means, and also for multiplying the added image data by a total gain value in response to a scene so as to perform an image synthesizing operation; converting means for converting the synthesized image data synthesized by the image synthesizing means into both a luminance signal and a color difference signal; and saturation correcting means for performing a saturation correcting process operation with respect to the color difference signal in response to the luminance signal obtained by the converting means and a dynamic range of

Abstract: A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.

Abstract: Providing a digital camera capable of transmitting information on the compression of dynamic range to a printer while it is being transparent to the user whether the image data has been recorded in a wide dynamic range.

Abstract: There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read.

Abstract: Effectively reducing a noise on the face region to improve the picture quality of the entire image

Abstract: A planar dielectric integrated circuit is provided such that energy conversion loss between a planar dielectric line and electronic components is small and that impedance matching between them can be easily obtained. A planar dielectric line is provided by causing two slots to oppose each other with a dielectric plate interposed in between, a slot line and line-conversion conductor patterns are provided in the end portions of the planar dielectric line, and an FET is disposed in such a manner as to be extended over the slot line.

Abstract: No compression is applied to saturation data up to a value thereof slightly lower than a boundary of saturation values capable of being reproduced by an output unit. Data representing saturation equal to or greater than a threshold value is subjected to non-linear compression so as to render the data reproducible by the output unit. Since only the necessary saturation is compressed, an image having a saturation close to the saturation represented by the original input saturation data can be reproduced in the output unit.

Abstract: An image combined high sensitivity image and low sensitivity image is provided with well-adjusted white balance and broad dynamic range. The image is obtained by multiplying the combined data by total gain that depends on scene. A white balance is adjusted with gain value calculated from of high output image data. Lv value representing luminance is calculated and compared with a threshold to decide whether or not the high sensitivity image and the low sensitivity image should be combined. First gamma correction unit performs gamma-correction for the image signal derived from the high sensitivity signal with first gamma character, second gamma correction unit performs gamma-correction for the image signal derived from the low sensitivity signal with second gamma character that is different from the first gamma character, and addition unit combines the image signal from the first gamma correction unit and the image signal from the second gamma correction unit.

Abstract: A high-frequency circuit device includes a dielectric substrate. A planar conductor is provided on each of top and bottom surfaces of the dielectric substrate and a slot line is formed on the top surface. Also, undesired-wave propagation preventing circuits, each including multistage band-elimination filters, are provided on the top surface of the dielectric substrate, with the slot line therebetween. Each of the band-elimination filters includes two conductive lines and a resonator which is provided at a portion of one of the conductive lines and which includes two spiral lines. Accordingly, propagation of an undesired wave of the band whose center is the resonance frequency of the resonator can be prevented.

Abstract: A high-frequency circuit device includes a substrate and a high-frequency circuit. The high-frequency circuit is provided on the substrate and has a signal line. The signal line is configured with a slot line provided by electrodes that are arranged side-by-side with a space therebetween on the substrate. The slot line can facilitates circuit design compared to a microstrip line and has significantly low conduction loss compared to a coplanar line, and can improve the Q-value of the high frequency circuit. This can provide an improved high-frequency circuit device having small phase noise. The high-frequency circuit device, which also serves as an oscillator, employs a slot output and thus can provide an advantage of better continuity for a class-B push-pull amplifier that operates more efficiently than a class-A one.

Abstract: A dielectric resonator device includes a dielectric substrate. Electrode films are formed on the front and back surfaces of the dielectric substrate, respectively. A TE010-mode resonator is constituted by two circular openings which oppose each other and which are formed in the electrode films. Two opposing slots formed in the electrode films constitute a planar dielectric transmission line (PDTL). The PDTL is connected to the TE010-mode resonator. An excitation section is formed by extending two portions of each electrode film on two side of each slot into each opening.

Abstract: A received light quantity detection device where high-sensitivity pixels and low-sensitivity pixels are formed is used for photometry. It is possible to perform measurement over the low range (for example, 0[EV] through 8[EV]with a single occasion of photometry. In the case that both the high-sensitivity pixels and the low-sensitivity pixels are saturated, it is possible to perform further measurement over the high range (for example, 8[EV] through 16[EV]) by narrowing the aperture or increasing the electronic shutter speed for retried photometry with a retried photometry. This reduces the time required to calculate a correct exposure value on image pickup apparatus such as a camera.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: A voltage controlled oscillator includes a resonant circuit which is connected with an active circuit. In the resonant circuit, a variable capacitance diode is connected with a resonator via a transmission line, and a capacitive circuit is connected in parallel with the variable capacitance diode. By setting the length of the transmission line to an appropriate value ranging from, for example, about one quarter to about one half of the wavelength of the resonant frequency, the frequency change width can increase, while maintaining the frequency linearity because of connection of the capacitive circuit.

Abstract: A radio frequency module includes a multi-chip substrate divided into separate substrates. An antenna block, a duplexer block, a transmitter block, a receiver block, and an oscillator block are formed on the separate substrates. Connection resonators, which are connected to transmission lines, are formed at edges of the separate substrates. The connection resonators on adjacent ones of the separate substrates are arranged close to each other such that the two adjacent resonators are electromagnetically coupled to each other. Thus, the transmission lines on the separate substrates are interconnected, and a signal can be propagated among the blocks.