Abstract: A glass for magnetic recording medium substrate is an amorphous oxide glass. In terms of mol %, SiO2 content ranges from 45 to 68%, Al2O3 from 5 to 20%, total content of SiO2 and Al2O3 60 to 80%, B2O3 from 0 to 5%, MgO from 3 to 28%, CaO from 0 to 18%, total content of BaO and SrO 0 to 2%, total content of alkali earth metal oxides from 12 to 30%, total content of alkali metal oxides from 3.5 to 15%, and at least one kind selected from the group made of Sn oxide and Ce oxide being included, a total content of Sn oxide and Ce oxide ranges from 0.05 to 2.00%, a glass transition temperature ?625° C., a Young's modulus ?83 GPa, a specific gravity ?2.85, and an average linear expansion coefficient at 100 to 300° C.?48x10-7/° C.

Abstract: [Object] To provide a method of manufacturing a plate-like molded body having a thickened portion in a region spaced apart from an edge in a substantially flat plate-like portion. [Solution] Provided is a method of manufacturing a plate-like molded body having a plurality of thickened portions, including at least a drawing step of obtaining by a drawing process a cylindrical drawn molded body including a flat plate portion and a cylindrical drawn portion that swells in such a manner as to project from the flat plate portion and has a circular top portion.

Abstract: A vehicle as a moving body is provided with an imaging device as first object detecting means and a radar apparatus as second object detecting means. The object recognition apparatus is provided with axis displacement learning means for learning an axis displacement of the reference axis X1 of the first object detecting means; axis displacement determining means for performing, based on an object detecting result of the first object detecting means and the second object detecting means, an axis displacement determination process for determining whether or not an axis displacement has occurred in the reference axis of the second object detecting means; and disabling means for disabling, based on a learning result of the axis displacement by the axis displacement learning means, information about an axis displacement of the second object detecting means acquired by the axis displacement determination process.

Abstract: A wavelength conversion member including a wavelength conversion layer containing quantum dots which are excited by exciting light and emit fluorescent light rays, in which the wavelength conversion layer includes base material films on at least one surface, and in the base material films, an absorbance of light at a wavelength of 450 nm measured by using an integrating sphere is less than 0.9%, and a total light ray transmittance is less than 92%.

Abstract: When generating a source code executed by a multi-core processor in order to verify performance of a control system, a device generates the source code as an object of execution by the multi-core processor from a control model, performs cooperative simulation, and measures an execution time of a program in the multi-core processor in the cooperative simulation.

Abstract: A high-strength hot-dip galvanized steel sheet containing a main component, the steel sheet having at least 40 wt. % of ferrite as a main phase in terms of the volumetric ratio, and 8-60% inclusive of residual austenite, the remaining structure comprising one or more of bainite, martensite, or pearlite. Austenite particles within a range where the average residual stress (sigmaR) thereof satisfies the expression ?400 MPa<=sigmaR<=200 MPa (formula (1)) are present in an amount of 50% or more in the hot-dip galvanized steel sheet. The surface of the steel sheet has a hot-dip galvanized layer containing less than 7 wt. % of Fe, the remainder comprising Zn, Al and inevitable impurities.

Abstract: In a manufacturing method of sheared components, the shearing including a process of fixing a workpiece to a die, and a process of punching the workpiece by bringing a punch and the die relatively close to each other, is performed a plurality of times, and when a shearing sequence is started, the shearing is performed by using a punch including a first cutting edge having a first tip end surface which opposes the workpiece, and a first retracting surface which retracts from the first tip end surface considering an approaching direction to the die as a standard; and a die including a second cutting edge having a second tip end surface which opposes the workpiece, and a second retracting surface which retracts from the second tip end surface considering an approaching direction to the punch as a standard.

Abstract: A method of producing a semiconductor device includes forming, on a semiconductor substrate comprising a first surface on which an insulating layer covering a wiring structure and a first through via passing through the insulating layer are formed and a second surface opposed to, and facing away from, the first surface, a patterned first insulating film comprising at least one opening therethrough on the second surface, forming a through via hole inwardly of the second surface within which the wiring structure is exposed, by anisotropic dry etching into the second surface side of the semiconductor substrate through the at least one opening in the first insulating film, using a gas mixture containing SF6, O2, SiF4, and at least one of CF4, Cl2, BCl3, CF3I, and HBr, and forming a second through via in the through via hole.

Abstract: Provided is a backlight unit, including: a light source allowing light having a light emission center wavelength of ? nm to exit; and a wavelength conversion member positioned on an optical path of the light exiting from the light source, in which the wavelength conversion member includes a wavelength conversion layer containing a fluorescent material which is excited by exciting light and emits fluorescent light, and a light scattering layer containing particles having a particle size of greater than or equal to 0.1 ?m in a matrix, an average refractive index n1 of the wavelength conversion layer satisfies a relationship of n1<n2 with respect to an average refractive index n2 of the matrix of the light scattering layer, and a light absorptivity of the light scattering layer at a wavelength of ? nm is less than or equal to 8.0%.

Abstract: A transport device includes a transport member and a moving member. The transport member includes a shaft and a blade helically extending on an outer peripheral surface of the shaft. The transport member transports a granular material with a rotation of the shaft. The moving member extends from an outer side of the transport member in a radial direction to the shaft. The moving member includes a distal end portion moving in an axial direction of the shaft in a gap defined by the blade.

Abstract: An imaging device, an imaging apparatus, and an image input device. The imaging device includes a plurality of pixels disposed on a semiconductor substrate, and each of the pixels includes a photoelectric converter. The photoelectric converter includes a photoelectrically converting layer configured to convert incident light into a signal charge, a transparent electrode disposed on the photoelectrically converting layer, a protective layer disposed under the photoelectrically converting layer, an insulating layer disposed under the protective layer, and a pixel electrode disposed under the insulating layer. The imaging apparatus includes the imaging device. The image input device includes the imaging device.

Abstract: A method of producing a sulfide-based solid electrolyte including bringing an alkali metal sulfide and a sulfur compound into contact in a mixed solvent of a hydrocarbon solvent and a polar aprotic solvent.

Abstract: A method of producing a sulfide-based solid electrolyte including bringing an alkali metal sulfide and a sulfur compound into contact in a mixed solvent of a hydrocarbon solvent and a polar aprotic solvent.

Abstract: A hot-rolled steel sheet including, in terms of % by mass, 0.030% to 0.120% of C, 1.20% or less of Si, 1.00% to 3.00% of Mn, 0.01% to 0.70% of Al, 0.05% to 0.20% of Ti, 0.01% to 0.10% of Nb, 0.020% or less of P, 0.010% or less of S, and 0.005% or less of N, and a balance consisting of Fe and impurities, in which 0.106?(C %-Ti %*12/48-Nb %*12/93)?0.012 is satisfied; a pole density of {112}(110) at a position of ¼ plate thickness is 5.7 or less; an aspect ratio (long axis/short axis) of prior austenite grains is 5.3 or less; a density of (Ti, Nb)C precipitates having a size of 20 nm or less is 109 pieces/mm3 or more; a yield ratio YR, which is the ratio of a tensile strength to a yield stress, is 0.80 or more; and a tensile strength is 590 MPa or more.

Abstract: A spot welding method is a method of performing spot welding to obtain a spot welded joint, the method including a spot welding with two-stage welding, setting a ratio (I2/I1) of a current I2 of a second welding process to a current I1 of a first welding process to from 0.5 to 0.8, setting a time tc of a cooling process within a range of from 0.8×tmin to 2.5×tmin wherein tmin is calculated using the equation (0.2×H2) according to a sheet thickness H of the steel sheets, setting an welding time t2 of a second welding process within a range of from 0.7×tmin to 2.5×tmin, and setting a pressure from the cooling process onward to greater than a pressure until the first welding process.

Abstract: The present invention provides a fillet welded joint and a method of production of a fillet welded joint which can raise the productivity of the method of production of a fillet welded joint and a fillet welded joint without sacrificing the strength against fatigue fracture of the welded structural member. The fillet welded joint of the present invention is a fillet welded joint formed by fillet welding at least two metal members, wherein, on the surface of at least one of the metal members, the fillet welded joint comprises a press bead of a rib-shaped projection provided by press-forming so as to project upward to the side having a weld bead formed by the fillet welding, and part of the press bead contacts or overlaps the weld bead.

Abstract: A method of producing a semiconductor device includes forming, on a semiconductor substrate comprising a first surface on which an insulating layer covering a wiring structure and a first through via passing through the insulating layer are formed and a second surface opposed to, and facing away from, the first surface, a patterned first insulating film comprising at least one opening therethrough on the second surface, forming a through via hole inwardly of the second surface within which the wiring structure is exposed, by anisotropic dry etching into the second surface side of the semiconductor substrate through the at least one opening in the first insulating film, using a gas mixture containing SF6, O2, SiF4, and at least one of CF4, Cl2, BCl3, CF3I, and HBr, and forming a second through via in the through via hole.

Abstract: According to one embodiment, an inverter includes a housing having a corner, a DC terminal, an electronic component, an AC terminal, a wireless communication module, and a projection mechanism. The DC terminal inputs DC power. The electronic component converts the DC power input to the DC terminal into AC power. The AC terminal outputs the AC power from the electronic component to the outside of the housing. The wireless communication module includes an antenna which receives or transmits a signal for controlling the electronic component. The projection mechanism projects at least a part of the antenna into the outside of the housing. The projection mechanism is provided in a portion of the housing other than the corner.