Abstract: A laser beam processing method comprising holding a plate-like workpiece having dividing lines formed in a lattice pattern on the front surface on a chuck table and applying a laser beam capable of passing through the plate-like workpiece to the plate-like workpiece held on the chuck table along the dividing lines to form a deteriorated layer in the inside of the plate-like workpiece along the dividing lines, wherein a height position detection step of detecting the position of a height of the surface on the side to which the laser beam is applied, of the plate-like workpiece held on the chuck table along a dividing line; and a laser beam application step of applying a laser beam to the workpiece along the dividing line while controlling the position of the focusing point of the laser beam corresponding to the position of the height detected in the height position detection step.

Abstract: A wafer laser processing method for forming a deteriorated layer along streets in the inside of a wafer having streets formed in a lattice pattern on the front surface, the method comprising: a wafer holding step for suction-holding the wafer on the chuck table in such a manner that the processing surface of the wafer faces up; an undulating area detection step for detecting an undulating area in the outer peripheral portion of the wafer suction-held on the chuck table; an undulation area deteriorated layer forming step for applying a laser beam along the streets to the undulating area of the wafer without activating the focal point position adjustment means to form a deteriorated layer along the streets in the inside of the undulating area of the wafer; and a stable holding area deteriorated layer forming step for applying a laser beam along the streets to a stable holding area other than the undulating area of the wafer while the focal point position adjustment means is controlled based on a detection signa

Abstract: A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate thereof, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially on each street. The method includes a laser beam processing step for applying a laser beam to the positions of areas at which the metal patterns are located, and to the low-dielectric insulating film, under different processing conditions so as to remove the metal patterns and the low-dielectric insulating film without damaging the substrate and its circuits.

Abstract: A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of the

Abstract: A semiconductor wafer treatment method for dividing an adhesive tape, which has been stuck to the entire back of a semiconductor wafer, along divided streets of the semiconductor wafer. Before division of the adhesive tape by application of laser beams, the state of the divided streets is detected, and laser beams are applied to the adhesive tape based on such detection.

Abstract: A laser processing method for melt-dividing an adhesive film for die bonding affixed to the back surface of a semiconductor wafer which has been separated into a plurality of semiconductor chips and which is put on an extensible dicing tape mounted on an annular frame along dividing grooves for separating the plurality of semiconductor chips from one another, comprising the steps of a tape expanding step for expanding the dicing tape affixed to the semiconductor wafer to increase the width of the dividing grooves for separating the plurality of semiconductor chips from one another; and an adhesive film melt-dividing step for melt-dividing the adhesive film along the dividing grooves by applying a laser beam to the adhesive film along the dividing grooves in a state where the width of the dividing grooves for separating the plurality of semiconductor chips from one another has been increased.

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a pulse laser beam to the workpiece held on the chuck table, and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, wherein the machine further comprises a feed amount detection means for detecting the processing-feed amount of the chuck table and a control means for controlling the laser beam application means based on a detection signal from the feed amount detection means, and the control means outputs an application signal to the laser beam application means for each predetermined processing-feed amount based on a signal from the feed amount detection means.

Abstract: To prevent a blowout nozzle from colliding with a workpiece due to a trouble of a backpressure sensor so as to avoid damage to the workpiece in a processing apparatus provided with a backpressure sensor, the backpressure sensor is formed capable of being freely moved at the blowout nozzle thereof in the air blowout direction and in the direction opposite thereto, and provided with a free-movement detecting sensor adapted to detect an actual free-movement of the blowout nozzle.

Abstract: A laser beam machine comprising a workpiece holding means for holding a workpiece, a laser beam application means comprising a condenser for applying a laser beam to the workpiece held on the workpiece holding means, and a focusing point position adjusting means for adjusting the position of the focusing point of the laser beam applied by the condenser, wherein the machine further comprises a temperature detection means for detecting a temperature of the condenser and a control means for controlling the focusing point position adjusting means based on the temperature of the condenser detected by the temperature detection means.

Abstract: To prevent a blowout nozzle from colliding with a workpiece due to a trouble of a backpressure sensor so as to avoid damage to the workpiece in a processing apparatus provided with a backpressure sensor, the backpressure sensor is formed capable of being freely moved at the blowout nozzle thereof in the air blowout direction and in the direction opposite thereto, and provided with a free-movement detecting sensor adapted to detect an actual free-movement of the blowout nozzle.

Abstract: A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate, a plurality of circuits sectioned by streets formed in a lattice pattern, and metal patterns for testing partially formed on each street, comprising: a laser beam processing step for applying a laser beam to the positions of the areas at which the metal patterns are located and the area of the low-dielectric insulating film under different processing conditions to remove the metal patterns and the low-dielectric insulating film.

Abstract: A laser beam processing method comprising holding a plate-like workpiece having dividing lines formed in a lattice pattern on the front surface on a chuck table and applying a laser beam capable of passing through the plate-like workpiece to the plate-like workpiece held on the chuck table along the dividing lines to form a deteriorated layer in the inside of the plate-like workpiece along the dividing lines, wherein a height position detection step of detecting the position of a height of the surface on the side to which the laser beam is applied, of the plate-like workpiece held on the chuck table along a dividing line; and a laser beam application step of applying a laser beam to the workpiece along the dividing line while controlling the position of the focusing point of the laser beam corresponding to the position of the height detected in the height position detection step.

Abstract: The present invention provides a circuit board connecting method that includes an alkane application step and a heat-press-bonding step. The alkane application step is a preliminary step which applies an alkane group to a printed circuit board. The heat-press-bonding step heat-press-bonds a flexible circuit board to the printed circuit board by positioning their printed wire terminals and conductive thick-film terminals to face one another. In the heat-press-bonding step, the alkane group boils and cleans the surface of the printed wire terminals and conductive thick-film terminals, thereby removing the oxide film to expose the metallic portion of the terminals. The alkane group soaks into a thermoplastic film or base plate, causing it to swell and thereby bond the flexible circuit board to the printed circuit board tightly. Accordingly, both electrical and mechanical firm bonding is accomplished at a very low cost and short time.

Abstract: The present invention provides a circuit board connecting method that includes an alkane application step and a heat-press-bonding step. The alkane application step is a preliminary step which applies an alkane group to a printed circuit board. The heat-press-bonding step heat-press-bonds a flexible circuit board to the printed circuit board by positioning their printed wire terminals and conductive thick-film terminals to face one another. In the heat-press-bonding step, the alkane group boils and cleans the surface of the printed wire terminals and conductive thick-film terminals, thereby removing the oxide film to expose the metallic portion of the terminals. The alkane group soaks into a thermoplastic film or base plate, causing it to swell and thereby bond the flexible circuit board to the printed circuit board tightly. Accordingly, both electrical and mechanical firm bonding is accomplished at a very low cost and short time.

Abstract: The present invention provides a circuit board connecting method that includes an alkane application step and a heat-press-bonding step. The alkane application step is a preliminary step which applies an alkane group to a printed circuit board. The heat-press-bonding step heat-press-bonds a flexible circuit board to the printed circuit board by positioning their printed wire terminals and conductive thick-film terminals to face one another.

Abstract: The present invention provides a circuit board connecting method that includes an alkane application step and a heat-press-bonding step. The alkane application step is a preliminary step which applies an alkane group to a printed circuit board. The heat-press-bonding step heat-press-bonds a flexible circuit board to the printed circuit board by positioning their printed wire terminals and conductive thick-film terminals to face one another. In the heat-press-bonding step, the alkane group boils and cleans the surface of the printed wire terminals and conductive thick-film terminals, thereby removing the oxide film to expose the metallic portion of the terminals. The alkane group soaks into a thermoplastic film or base plate, causing it to swell and thereby bond the flexible circuit board to the printed circuit board tightly. Accordingly, both electrical and mechanical firm bonding is accomplished at a very low cost and short time.

Abstract: In an output control apparatus for a microwave oven, it is known to insert a control switch in the primary side of a power transformer of a magnetron. In this invention, the control switch is provided in the secondary side of the power transformer either in a magnetron circuit or in a rectifier circuit. The actuation of the control switch is controlled by an on-off control signal such that the control switch is opened and closed respectively within zero-current time periods, of a half-wave current which flows through the rectifier or the magnetron. A transient rush current to the transformer is reduced and reliable intermittent operation of the magnetron is assured.

Abstract: In conventional blood pressure measuring apparatus, the simultaneous measurement of a pulse rate and a blood pressure is difficult without the use of complicated attachment devices. In this invention, a pulse rate measuring circuit is provided along with a blood pressure measurement apparatus for a simultaneous measurement of both pulse rate and blood pressure. Both measurements are derived from at least one microphone signal contained in a cuff-device. The pulse rate measuring circuit is designed to commence counting of the number of pulses after at least two Korotkoff's sounds have been detected and continues counting until a predetermined number is reached while the time period required for counting the predetermined number of pulses is measured. The pulse rate is determined by dividing the predetermined number by the measured time period.

Abstract: A blood pressure measuring apparatus in which an output of a microphone capable of detecting the Korotkoff sounds is directed to a first band-pass filter of 5 to 30 Hz and a second band-pass filter of 40 to 200 Hz, and the presence or absence of an output from the second band-pass filter is counted by a counter circuit, whereby the maximum blood pressure is indicated when the counter is set to one state and the minimum blood pressure is indicated when the counter is set to the other state.