Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: An AlN sintered compact includes AlN crystal grains and a grain boundary phase, and the grain boundary phase is lower in Vickers hardness than the AlN crystal grains.

Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm3 and equal to or lower than 7.2 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: An oil pump that can be reduced in weight and is excellent in wear resistance and easy to manufacture is provided. The oil pump includes an oil pump housing formed of aluminum alloy, and an inner rotor and an outer rotor that slide along the oil pump housing with contact kept therebetween to suck and discharge oil. Composite layers including porous metallic bodies are arranged at parts of the oil pump housing that contact the inner rotor and the outer rotor. Pores of the porous metallic bodies are impregnated with the aluminum alloy constituting the oil pump housing.

Abstract: A conductor of the present invention has a conductive DLC film formed on a conductive base. A conductive DLC film is formed on a conductive base and is supported by a conical spring electrode to be in contact with the conductive DLC film. Thus, a conductor is obtained which has good wear resistance and oxidation resistance and which is suitable for bringing conductive parts into contact.

Abstract: An electrode for plating of one example of a corrosion-resistant conductive member of the present invention includes a base formed of stainless steel or the like, a first conductive film of an electrochemically noble material formed on the base, and a second conductive film of an electrochemically base material formed on the first conductive film. The second conductive film is of a material containing carbon. Thus, a corrosion-resistant conductive member is provided which has good corrosion resistance and which can be inexpensively manufactured.

Abstract: An oil pump that can be reduced in weight and is excellent in wear resistance and easy to manufacture is provided. The oil pump includes an oil pump housing formed of aluminum alloy, and an inner rotor and an outer rotor that slide along the oil pump housing with contact kept therebetween to suck and discharge oil. Composite layers including porous metallic bodies are arranged at parts of the oil pump housing that contact the inner rotor and the outer rotor. Pores of the porous metallic bodies are impregnated with the aluminum alloy constituting the oil pump housing.

Abstract: A joint body in which aluminum and silicon nitride are strongly joined with each other is provided at a low cost, thereby providing a lightweight part which is excellent in sliding property as a mechanical part of an internal combustion engine of an automobile or the like. The joint body includes a base material which is mainly composed of aluminum, and a member consisting of a silicon nitride sintered body which is substantially directly joined to the base material. A powdery or bulky base material (2) mainly composed of aluminum, and a member (1) consisting of a silicon nitride sintered body are charged in a mold and heated under pressurization, thereby joining the same with each other.

Abstract: A silicon nitride sintered body comprising 3.5% by weight or less of aluminum, 3.5% by weight or less of oxygen and the balance of silicon nitride; and a silicon nitride sintered body comprising 90% by weight or more of silicon nitride, 3.5% by weight or less of aluminum, 3.5% by weight or less of oxygen and from 0.01 to 10% by weight of at least one metallic element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fin, Fe, Co, Ni, Nd, and Ho. These sintered bodies have a density of 3.15 g/cm.sup.3 or more and a thermal conductivity of 40 W/mK or more.

Abstract: This invention provides composite ceramic powder comprising matrix ceramic powder and fine particles of ceramic, metal or metal compound which are different from the matrix ceramic powder and dispersed in the matrix ceramic powder. The composite ceramic powder is produced by mixing matrix ceramic powder or its precursor with fine particles to be dispersed therein and then heating the resulting mixture. The composite ceramic powder is also produced by dispersing matrix ceramic particles or precursor thereof in an organic solvent with an organic compound as a dispersoid particle precursor and separating and recovering the organic solvent. The composite ceramic powder is suitable for producing sintered bodies having excellent properties, especially with respect to thermal conductivity, flexural strength and light transmittance, by a conventional ceramic fabrication process.

Abstract: The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

Abstract: The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti, and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

Abstract: The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti and compounds thereof in the total amounts of not greater than 1.0 wt.% and not less than 0.01 wt.% in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

Abstract: A glass-aluminum nitride composite comprising a sintered body is produced by adding glass powder to aluminum nitride grains having an oxygen content of less than 2% and a mean grain diameter of 1.0 .mu.m or more and subjecting the mixture to molding and sintering. A suitable glass is one based on borosilicate and the addition of an AlN whisker serves to improve the strength. The composite material of the present invention has a high heat conductivity, a low permittivity and a high strength and is suitable as a semiconductor packaging material.

Abstract: Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage .alpha. crystallization of 93% or more and a mean grain diameter of 0.7 .mu.m or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500.degree. to 1700.degree. C.; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si.sub.3 N.sub.4 (including .beta.