Abstract: The semiconductor substrate has a first principal surface and a second principal surface. The base contact layer is arranged between the base layer and the first principal surface, and forms a part of the first principal surface. The anode contact region is arranged between the anode layer and the first principal surface, forms a part of the first principal surface, and has a second conductivity type impurity concentration peak value higher than that of the anode layer. The anode contact region includes a first anode contact layer having a lower net concentration and a higher first conductivity type impurity concentration than the base contact layer.

Abstract: Provided is a semiconductor device that is easily controlled. The semiconductor device includes a first switching device and a second switching device that are connected in series between a first potential and a second potential lower than the first potential, wherein each of the first and second switching devices includes a transistor region, and a diode region electrically connected in anti-parallel to the transistor region, the transistor region includes a first gate controlled by a first gate signal, and the diode region includes a diode gate controlled by a diode gate signal.

Abstract: A vacuum envelope of a cathode ray tube includes a substantially rectangular panel with a skirt portion standing on an outer peripheral edge thereof. A substantially rectangular implosion-proof band made of metal is banded on the outer surface of the skirt portion. The implosion-proof band has a pair of long sides and a pair of short sides, and a yield point of a middle portion of each of the long sides differs from that of a middle portion of each of the short sides.