Abstract: A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.

Abstract: A level shifting circuit, satisfying a requirement of a high tolerated dV/dt level, and a highly reliable inverter circuit, wherein a set pulse signal and a reset pulse signal, both of which are level-shifted to a potential side taking as reference a reference potential of a gate control terminal of a switching terminal, are obtained differentially and integrated, and, in case these pulse signals equal or exceed stipulated integrated values, are transmitted as regular control signals controlling the on/off state.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided between the input section of the gate drive circuit of the voltage-drive type power semiconductor switching element and the isolated signal transmission means that transmits the output of the control circuit; and an abnormal signal discriminating circuit is also provided which turns on and off the switching means according to the output of the band pass filter thereby eliminating long-cycle noise derived from the isolated signal transmission element, short-cycle dv/dt noise, and induction noise; and also outputs alarm signals.

Abstract: A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.

Abstract: A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.

Abstract: A level shifting circuit, satisfying a requirement of a high tolerated dV/dt level, and a highly reliable inverter circuit, wherein a set pulse signal and a reset pulse signal, both of which are level-shifted to a potential side taking as reference a reference potential of a gate control terminal of a switching terminal, are obtained differentially and integrated, and, in case these pulse signals equal or exceed stipulated integrated values, are transmitted as regular control signals controlling the on/off state.

Abstract: The present invention is intended to provide a process for forming an electrodeposition coating film, wherein generation of gas pinhole is reduced and coating film appearance is excellent without using a specific resin as a binder resin. The present invention relates a process for forming an electrodeposition coating film having reduction of generation of gas pinhole, comprising a step of electrocoating by immersing an article to be coated in a cationic electrodeposition coating composition, wherein, the cationic electrodeposition coating composition comprises 10 to 30 parts by weight of a pigment comprising zinc oxide based on 100 parts by weight of a solid content of the coating composition, and the content of zinc oxide contained in the pigment is 0.25 to 5 parts by weight based on 100 parts by weight of the pigment.

Abstract: To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided between the input section of the gate drive circuit of the voltage-drive type power semiconductor switching element and the isolated signal transmission means that transmits the output of the control circuit; and an abnormal signal discriminating circuit is also provided which turns on and off the switching means according to the output of the band pass filter thereby eliminating long-cycle noise derived from the isolated signal transmission element, short-cycle dv/dt noise, and induction noise; and also outputs alarm signals.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided between the input section of the gate drive circuit of the voltage-drive type power semiconductor switching element and the isolated signal transmission means that transmits the output of the control circuit; and an abnormal signal discriminating circuit is also provided which turns on and off the switching means according to the output of the band pass filter thereby eliminating long-cycle noise derived from the isolated signal transmission element, short-cycle dv/dt noise, and induction noise; and also outputs alarm signals.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: A drive circuit that controls a switching device ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device when short circuit of the switching device is detected. Additionally, an ON-pulse retention command circuit retains the output of the drive circuit ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator that detects the gate terminal voltage of the switching device.

Abstract: A level shifting circuit, satisfying a requirement of a high tolerated dV/dt level, and a highly reliable inverter circuit, wherein a set pulse signal and a reset pulse signal, both of which are level-shifted to a potential side taking as reference a reference potential of a gate control terminal of a switching terminal, are obtained differentially and integrated, and, in case these pulse signals equal or exceed stipulated integrated values, are transmitted as regular control signals controlling the on/off state.

Abstract: An optical recording medium includes a substrate 11 with a concave and convex shape for dividing a track area formed on its surface, an optical recording layer 12 having a compound consisting of at least tin (Sn), nitrogen (N) and oxygen (O) formed on the surface in which the concave and convex shape is formed and a light transmission layer 13 formed on this optical recording layer 12. Then, a compound composition SnxNyOz of tin (Sn) nitrogen (N) and oxygen (O) comprising the optical recording layer 12 is selected so as to satisfy 30<x<70 (atomic %), 1<y<20 (atomic %) and 20<z<60 (atomic %). According to this arrangement, the optical recording medium can improve jitter caused when Sn is used as a recording material.

Abstract: A drive circuit 21 that controls a switching device 23 ON/OFF and a soft cutoff command circuit that gradually decreases the gate terminal voltage of the switching device 23 when short circuit of the switching device 23 is detected. Additionally, an ON-pulse retention command circuit 11 retains the output of the drive circuit 21 ON when the gate terminal voltage is judged to have exceeded a specified value by a gate voltage judgment comparator 16 that detects the gate terminal voltage of the switching device 23.

Abstract: To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided between the input section of the gate drive circuit of the voltage-drive type power semiconductor switching element and the isolated signal transmission means that transmits the output of the control circuit; and an abnormal signal discriminating circuit is also provided which turns on and off the switching means according to the output of the band pass filter thereby eliminating long-cycle noise derived from the isolated signal transmission element, short-cycle dv/dt noise, and induction noise; and also outputs alarm signals.

Abstract: The present invention provides a novel crater inhibiting method and crater inhibiting agent not containing an acrylic resin and hence capable of increasing the opportunities to be added to coating compositions and improving degree of freedom in preparation methods of coating composition. The method comprises that electrodeposition coating is conducted by using an electrodeposition coating composition containing an aminopolyether modified epoxy having a polyether chain of specific structure as an additive.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: (Object) To offer such drive circuit for a switching device that can operate a soft cutoff function when short circuit is detected and also can be prevented from breakdown even if a narrow pulse is inputted.