Patents by Inventor Koichi Takatsuki
Koichi Takatsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220301882Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.Type: ApplicationFiled: June 8, 2022Publication date: September 22, 2022Inventors: Koichi Takatsuki, Tadahiro Ishizaka, Mikio Suzuki, Toshio Hasegawa
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Patent number: 11387112Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.Type: GrantFiled: September 30, 2019Date of Patent: July 12, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Koichi Takatsuki, Tadahiro Ishizaka, Mikio Suzuki, Toshio Hasegawa
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Publication number: 20200111675Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.Type: ApplicationFiled: September 30, 2019Publication date: April 9, 2020Inventors: Koichi TAKATSUKI, Tadahiro ISHIZAKA, Mikio SUZUKI, Toshio HASEGAWA
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Patent number: 10309005Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: GrantFiled: August 28, 2014Date of Patent: June 4, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuhiko Kojima, Hiroshi Sone, Atsushi Gomi, Kanto Nakamura, Toru Kitada, Yasunobu Suzuki, Yusuke Suzuki, Koichi Takatsuki, Tatsuo Hirasawa, Keisuke Sato, Chiaki Yasumuro, Atsushi Shimada
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Publication number: 20160251746Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: ApplicationFiled: August 28, 2014Publication date: September 1, 2016Inventors: Yasuhiko KOJIMA, Hiroshi SONE, Atsushi GOMI, Kanto NAKAMURA, Toru KITADA, Yasunobu SUZUKI, Yusuke SUZUKI, Koichi TAKATSUKI, Tatsuo HIRASAWA, Keisuke SATO, Chiaki YASUMURO, Atsushi SHIMADA
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Patent number: 8394231Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.Type: GrantFiled: January 23, 2007Date of Patent: March 12, 2013Assignee: Tokyo Electron LimitedInventors: Koichi Takatsuki, Hikaru Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi
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Publication number: 20130017690Abstract: In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects.Type: ApplicationFiled: March 30, 2011Publication date: January 17, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Koichi Takatsuki, Kazuyoshi Yamazaki, Hideyuki Noguchi, Daisuke Tamura, Tomohiro Saito
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Patent number: 8183165Abstract: According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: February 1, 2011Date of Patent: May 22, 2012Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Patent number: 8076252Abstract: In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.Type: GrantFiled: July 28, 2006Date of Patent: December 13, 2011Assignee: Tokyo Electron LimitedInventor: Koichi Takatsuki
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Publication number: 20110124202Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: ApplicationFiled: February 1, 2011Publication date: May 26, 2011Applicant: Tokyo Electron LimitedInventors: Seiji MATSUYAMA, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Patent number: 7897518Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: April 9, 2010Date of Patent: March 1, 2011Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20100196627Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: ApplicationFiled: April 9, 2010Publication date: August 5, 2010Applicant: Tokyo Electron LimitedInventors: Seiji MATSUYAMA, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20100144159Abstract: In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.Type: ApplicationFiled: July 28, 2006Publication date: June 10, 2010Applicant: TOKYO ELECTRON LIMITEDInventor: Koichi Takatsuki
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Patent number: 7723241Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: September 1, 2006Date of Patent: May 25, 2010Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20070131171Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.Type: ApplicationFiled: January 23, 2007Publication date: June 14, 2007Applicant: Tokyo Electron LimitedInventors: Koichi Takatsuki, Hikaru Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi
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Publication number: 20070059944Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: ApplicationFiled: September 1, 2006Publication date: March 15, 2007Applicant: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20040127033Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.Type: ApplicationFiled: January 29, 2004Publication date: July 1, 2004Inventors: Koichi Takatsuki, Hiraku Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori, Shuuichi Ishizuka, Syoichi Abe, Takashi Suzuki, Kohei Kawamura, Hidenori Miyoshi, Gishi Chung, Yasuhiro Oshima, Hiroyuki Takahashi