Abstract: According to one embodiment of the present disclosure, there is provided a plasma processing apparatus for performing plasma processing on a substrate in a processing container, the plasma processing apparatus comprising: an upper electrode; a power feeding rod; a gas diffusion plate having a plurality of ejection holes and disposed below the upper electrode; a gas introduction member; an insulation introduction member; a plurality of gas supply paths; and a confluence provided directly below a connection between the upper electrode and the power feeding rod, and configured to cause the processing gas from the gas supply paths to merge, wherein the processing gas after merging in the confluence flows in a space that is formed above the gas diffusion plate and communicating with the ejection holes.

Abstract: A plasma processing apparatus for performing a plasma processing on a substrate within a processing container includes: an upper electrode disposed above the processing container; a cylindrical shield member provided on the processing container to support a matching device; a power feeding rod disposed inward of the shield member and for supplying a high-frequency power provided from a plasma source to the upper electrode via the matching device; a gas introduction member for supplying a processing gas heated outside the shield member into the processing container from above the upper electrode; and a sealing member provided outside the shield member and on a peripheral edge of a penetration portion of the shield member through which the gas introduction member penetrates, the sealing member made of a conductive material having a lower thermal conductivity than materials of the gas introduction member and the shield member.

Abstract: According to one embodiment of the present disclosure, there is provided a plasma processing apparatus for performing plasma processing on a substrate in a processing container, the plasma processing apparatus comprising: an upper electrode; a power feeding rod; a gas diffusion plate having a plurality of ejection holes and disposed below the upper electrode; a gas introduction member; an insulation introduction member; a plurality of gas supply paths; and a confluence provided directly below a connection between the upper electrode and the power feeding rod, and configured to cause the processing gas from the gas supply paths to merge, wherein the processing gas after merging in the confluence flows in a space that is formed above the gas diffusion plate and communicating with the ejection holes.

Abstract: A plasma processing apparatus for performing a plasma processing on a substrate within a processing container includes: an upper electrode disposed above the processing container; a cylindrical shield member provided on the processing container to support a matching device; a power feeding rod disposed inward of the shield member and for supplying a high-frequency power provided from a plasma source to the upper electrode via the matching device; a gas introduction member for supplying a processing gas heated outside the shield member into the processing container from above the upper electrode; and a sealing member provided outside the shield member and on a peripheral edge of a penetration portion of the shield member through which the gas introduction member penetrates, the sealing member made of a conductive material having a lower thermal conductivity than materials of the gas introduction member and the shield member.

Abstract: A gate valve includes a valve body to be pressed against a peripheral surface around opening through which a processing target object is loaded and unloaded, pressed members arranged on a surface of the valve body around the opening, a main slider which slides in a direction parallel to the peripheral surface around the opening and pressing mechanisms, provided at the main slider, for pressing the respective pressed members. Each of the pressing mechanisms includes a cam having a protrusion for pressing the valve body against the peripheral surface around the opening and an inclined portion sloping downward from the protrusion. The pressing mechanisms serve to press the valve body in a direction substantially perpendicular to the peripheral surface around the opening in a state that the valve body is positioned to face the opening, so that the valve body is pressed against the peripheral surface around the opening.

Abstract: A gate valve includes a plurality of openings through which objects to be processed are loaded and unloaded; a valve body to be pressed toward the openings; a pressed portion provided to the valve body; a main slider slidable in parallel with a surface where the openings are formed; and a cam provided to the main slider and having a protrusion and an inclined portion inclined from the protrusion in a sloped shape, for pressing the pressed portion of the valve body in a state where the valve body faces the openings. The valve body has one or more slit-shaped openings serving as opening portions for opening the openings, and portions adjacent to the slit-shaped openings serving as blocking portions for blocking the openings.

Abstract: Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.

Abstract: A gate valve includes a valve body to be pressed against a peripheral surface around opening through which a processing target object is loaded and unloaded, pressed members arranged on a surface of the valve body around the opening, a main slider which slides in a direction parallel to the peripheral surface around the opening and pressing mechanisms, provided at the main slider, for pressing the respective pressed members. Each of the pressing mechanisms includes a cam having a protrusion for pressing the valve body against the peripheral surface around the opening and an inclined portion sloping downward from the protrusion. The pressing mechanisms serve to press the valve body in a direction substantially perpendicular to the peripheral surface around the opening in a state that the valve body is positioned to face the opening, so that the valve body is pressed against the peripheral surface around the opening.

Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

Abstract: Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.

Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.