Abstract: An object of the present invention is to provide a system for performing objective examination of central sensitization, in particular, a system for objectively determining the presence or absence of central sensitization in a chronic pain patient. The present invention provides a device for diagnosing the presence or absence of central sensitization, the device including: stimulation output means for outputting thermal stimulation which can be perceived by a subject; first input means capable of inputting a measurement start signal; second input means capable of inputting a measurement end signal; and measurement control means for measuring time between an input signal from the first input means and an input signal from the second input means.

Abstract: An object of the present invention is to provide a system for performing objective examination of central sensitization, in particular, a system for objectively determining the presence or absence of central sensitization in a chronic pain patient. The present invention provides a device for diagnosing the presence or absence of central sensitization, the device including: stimulation output means for outputting thermal stimulation which can be perceived by a subject; first input means capable of inputting a measurement start signal; second input means capable of inputting a measurement end signal; and measurement control means for measuring time between an input signal from the first input means and an input signal from the second input means.

Abstract: A semiconductor controlled rectifier comprises a semiconductor substrate having four layers of alternate n- and p-type conductivities and includes two main surfaces one of which is formed of the exposed surface of first and second layers and the other of which is formed of the exposed surface of a fourth layer. A gate electrode of a rectangular shape is disposed on the second layer on the one main surface and a cathode electrode is disposed on the first layer so as to extend along at least two sides of the rectangular gate electrode. The cathode electrode portion extending along the short side of the rectangular gate extends slightly beyond a p-n junction defined between the first and second layers, so as to be in ohmic contact with the second layer.

Abstract: A diode-integrated thyristor comprising a region having a function of a thyristor and a region having a function of a diode which are integrated in the same semiconductor substrate and whose rectifying directions are opposite to each other, the carriers in the region having the function of a diode having a longer life time than the carriers in the region having the function of a thyristor.