Abstract: An image pickup device which can obtain an image of wide range picked up by a plurality of cameras is provided by preventing occurrence of parallax.

Abstract: In order to prevent the upper part of a subject such as a multistoried building or the like from being photographed in a short form when a wide angle shot is carried out, image pick-up means 5 are provided at intervals of 90 degrees on a base 4. The image pick-up means 5 respectively have front convex lenses 8 and image pick-up parts 7 along vertical planes parallel to each other. The front convex lenses 8 are displaced along the vertical planes so as to be provided at higher positions than those of the image pick-up parts 7. The NP points of the image pick-up means 5 are arranged to respectively correspond to each other so that a parallax is reduced.

Abstract: The image pickup device includes a plurality of plane mirrors arranged in the form of a polygonal pyramid, and a plurality of cameras disposed opposite the plane mirrors, respectively. The angle of incidence of a ray passing along the optical axis of a lens of the camera on the plane mirror is set to be less than 45 degrees.

Abstract: An imaging device includes a plurality of plane mirrors disposed into a polygonal pyramid shape, and a plurality of cameras disposed so as to individually face to the plurality of plane mirrors, wherein each of the plurality of cameras includes a lens, and an incident angle of a light beam traveling along an optical axis of the lens of each of the plurality of cameras on the corresponding one of the plurality of plane mirrors is less than 45°. With this configuration, the sizes of the mirrors and the whole size of the imaging device are reduced, to thereby miniaturize the imaging device.

Abstract: On a semiconductor substrate is formed an insulating layer having a gate insulating region, which is coated with a first polysilicon layer having a first portion and a second portion which contacts the gate insulating region. The first portion of the first polysilicon layer is then doped with an impurity such as phosphorous. The first polysilicon layer is coated with a second insulating layer on which is formed a second polysilicon layer. A first selective etching process is provided so that a capacitive insulating layer and an upper polysilicon electrode are successively formed on the first portion of the first polysilicon layer and the second portion of the first polysilicon layer is exposed. A second selective etching process is performed so that the first and second portions of the first polysilicon layer define a lower polysilicon electrode and a gate electrode, respectively.

Abstract: On a semiconductor substrate is formed an insulating layer having a gate insulating region, which is coated with a first polysilicon layer having a first portion and a second portion which contacts the gate insulating region. The first portion of the first polysilicon layer is then doped with an impurity such as phosphorous. The first polysilicon layer is coated with a second insulating layer on which is formed a second polysilicon layer. A first selective etching process is provided so that a capacitive insulating layer and an upper polysilicon electrode are successively formed on the first portion of the first polysilicon layer and the second portion of the first polysilicon layer is exposed. A second selective etching process is performed so that the first and second portions of the first polysilicon layer define a lower polysilicon electrode and a gate electrode, respectively.

Abstract: On a semiconductor substrate is formed an insulating layer having a gate insulating region, which is coated with a first polysilicon layer having a first portion and a second portion which contacts the gate insulating region. The first portion of the first polysilicon layer is then doped with an impurity such as phosphorous. The first polysilicon layer is coated with a second insulating layer on which is formed a second polysilicon layer. A first selective etching process is provided so that a capacitive insulating layer and an upper polysilicon electrode are successively formed on the first portion of the first polysilicon layer and the second portion of the first polysilicon layer is exposed. A second selective etching process is performed so that the first and second portions of the first polysilicon layer define a lower polysilicon electrode and a gate electrode, respectively.

Abstract: In a method of manufacturing a semiconductor device, a polysilicon resistance film is directly or indirectly formed on a semiconductor substrate. A first insulating film is formed on the polysilicon resistance film, and a second insulating film is formed on the first insulating film. An opening portion is formed to pass through the first insulating film and the second insulating film to expose the polysilicon resistance film. The first insulating film has an etching rate equal to or smaller than ⅛ of an etching rate of the second insulating film.

Abstract: A digital audio signal recording device which, in conjunction with a film magazine loaded with a motion picture film and an analog audio recording device recording analog audio signals on the motion picture film, constitutes an audio signal recording system for the motion picture film capable of recording both analog audio signals and digital audio signals on the motion picture film delivered from the film magazine. The digital audio signal recording device transports the motion picture film, delivered from the inside of the film magazine via the film reel-out section, into the digital audio signal recording device via a first film feed-in section, and then transports the film to the analog audio signal recording device via a first feed-out section and a film lead-in section. The motion picture film introduced into the analog audio signal recording device is returned into the digital audio signal recording device via a film lead-out section and a second film feed-in section.

Abstract: This invention is directed to a drawer system including a roll-up device comprising a core cylinder and a sheet to cover the upper open surface of a drawer in which the sheet is rolled up onto the core cylinder by elasticity. The sheet roll-up device is placed above the entrance of the drawer and the end of the sheet is secured to the top back side of the drawer so that the sheet can be drawn out from the sheet roll-up device against the elasticity to cover the open surface of the drawer and the articles therein when the drawer is pushed inside of the entrance, when the drawer is moved outwardly the sheet is rolled onto the roll-up device by the elasticity. Rollers may be placed on the ends of the core cylinder which rotate to feed the sheet out or to feed the sheet onto the drawer as the drawer is moved in and out.

Abstract: This invention relates to improved dollies for lifting and moving heavy objects such as furniture, refrigerators, and the like. It comprises a base plate having four casters with a top plate mounted thereabove. The top plate can be elevated via a pedal-actuated lever and link mechanisms to raise the load off the floor for movements and then lower it down. The invention includes a telescopic mechanism for adjusting the top plate with respect to the base plate and a spring to bear the main weight of the load to be moved. The lifting lever can be folded out of the way for load movement where clearance is a problem.

Abstract: A positioning apparatus for positioning a circular substrate having a notch in a circumferential edge includes a notch sensor which senses the rotational position of the substrate about a center axis, a pushing member adapted to fit into the notch and moved toward the center axis to displace the substrate so as to engage positioning elements, and a detector that detects the fitting of the pushing member in the notch, the detector being movable with the pushing member.