Abstract: The first transmission line has a width perpendicular to a transmission direction. The first electrode has a width not exceeding the width. The first electrode is opposed to the first transmission line. The ground layer has a positional relationship with each portion of the first transmission line. The ground layer is next to the first transmission line on at least one side consisting of a first side along a thickness direction of the mounting substrate, and a second side and a third side with the first transmission line interposed therebetween. The first transmission line is bonded to the first electrode and has the width equivalently, at least, at a portion of the first transmission line. The portion equivalently has the positional relationship with the ground layer. The portion is next to the ground layer in an equivalent shape along the transmission direction.

Abstract: An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

Abstract: A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

Abstract: According to an aspect, a substrate for a display apparatus includes: a first substrate; and at least one translucent coloring layer that overlaps with the first substrate. The at least one translucent coloring layer overlaps with an entire surface of a display region in which an image is displayed. A color of the at least one translucent coloring layer is identical across the entire surface of the display region.

Abstract: In the arrayed semiconductor optical device, a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device are monolithically integrated on a semiconductor substrate, each of the semiconductor optical devices includes a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer, a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device, and a height of the grating layer of the first semiconductor optical device is lower than a height of the grating layer of the second semiconductor optical device corresponding to difference in the layer thickness of the first semiconductor layer.

Abstract: A proximity detection device includes a display unit which has a display image surface in which a plurality of pixel electrodes are arranged in a matrix shape and a proximity operation detecting unit in which a transparent electrode for proximity operation detection is arranged to form an operation surface at a position superposed on the display image surface and a conductive film pattern forming the transparent electrode has a pitch of a linear pattern which is equal to or smaller than an arrangement pitch in one direction of the pixel electrodes.

Abstract: A method for controlling a power switching apparatus to solve problems including: setting a target time reaching a predetermined position immediately before a target phase by a time calculator during an opening and closing operation of a movable arc contact with respect to a fixed arc contact in a target phase at a predetermined average switching speed; and controlling an electric motor at a speed equal to or less than an average switching speed immediately before the target phase from an operation start time to the target time by a motor controller.

Abstract: A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

Abstract: A proximity detection device includes a display unit which has a display image surface in which a plurality of pixel electrodes are arranged in a matrix shape and a proximity operation detecting unit in which a transparent electrode for proximity operation detection is arranged to form an operation surface at a position superposed on the display image surface and a conductive film pattern forming the transparent electrode has a pitch of a linear pattern which is equal to or smaller than an arrangement pitch in one direction of the pixel electrodes.

Abstract: According to an aspect, a substrate for a display apparatus includes: a first substrate; and at least one translucent coloring layer that overlaps with the first substrate. The at least one translucent coloring layer overlaps with an entire surface of a display region in which an image is displayed. A color of the at least one translucent coloring layer is identical across the entire surface of the display region.

Abstract: According to an aspect, a substrate for a display apparatus includes: a first substrate; a translucent coloring layer that includes a plurality of color regions and that overlaps with the first substrate; a first translucent resin layer that overlaps with the first substrate at boundaries of the color regions; and a light shielding layer that overlaps with the first translucent resin layer on an opposite side to the first substrate side. A width of the light shielding layer in a direction parallel with the first substrate is equal to or smaller than a width of the first translucent resin layer in the parallel direction on a cross section vertical to the first substrate.

Abstract: According to an aspect, a substrate for a display apparatus includes: a first substrate; a translucent coloring layer that overlaps with the first substrate; a first translucent resin layer that overlaps with the translucent coloring layer on an opposite side to the first substrate side; a light shielding layer that overlaps with the first translucent resin layer on an opposite side to the first substrate side; and a second translucent resin layer that overlaps with the light shielding layer on an opposite side to the first substrate side. The first translucent resin layer is in contact with the first substrate in at least a part of a frame region arranged around a display region in which light is transmitted through the translucent coloring layer.

Abstract: The display device includes a detection electrode, a display pattern, a detection circuit connected to the detection electrode, a plurality of subpixel regions in which pixel electrodes are formed, pixel regions each composed of the subpixel regions, and a display region in which the pixel regions are arrayed. The pixel regions each include a first color subpixel region and a second color subpixel region. The subpixel regions are arrayed in a Y direction in the display region. First patterns having a circular or polygonal shape in a plan view are formed in the detection electrode. The detection electrode includes a first region electrically connected to the detection circuit and a second region separated from the detection circuit inside the display region. The first region extends in an X direction and a virtual line connecting centers of the adjacent first patterns extends in the X direction.

Abstract: Provided is a butt-jointed (BJ) semiconductor integrated optical device having a high manufacturing yield. A semiconductor integrated optical device, which is configured such that, on a semiconductor substrate, a first semiconductor optical element including an active layer and a second semiconductor optical element including a waveguide layer are butt-jointed to each other with their optical axes being aligned with each other, includes: a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer; and a cladding layer formed above the semiconductor regrowth layer.

Abstract: Provided is a semiconductor optical device, an arrayed semiconductor optical device, an optical module having a structure to reduce the parasitic capacitance as well as a high design degree of freedom and having a multilayer structure in which a semi-insulating substrate, a first semiconductor layer having one conductive type, an active layer having light emission function, a second semiconductor layer having the other conductive type, an insulating layer, and a conductive layer are stacked in order from the bottom. The multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure. In the semi-insulating substrate and the first semiconductor layer, a first grove which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety is formed.

Abstract: Provided is a semiconductor optical device, an arrayed semiconductor optical device, an optical module having a structure to reduce the parasitic capacitance as well as a high design degree of freedom and having a multilayer structure in which a semi-insulating substrate, a first semiconductor layer having one conductive type, an active layer having light emission function, a second semiconductor layer having the other conductive type, an insulating layer, and a conductive layer are stacked in order from the bottom. The multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure. In the semi-insulating substrate and the first semiconductor layer, a first grove which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety is formed.

Abstract: According to an aspect, a display device with a touch detection function includes: a plurality of pixel electrodes arranged in a matrix; a plurality of scanning signal lines; a drive electrode that faces the pixel electrodes; and a plurality of touch detection electrodes including a detection electrode pattern of a transparent conductive body that faces the drive electrode. The detection electrode pattern includes one or more slits each of which is a region where the transparent conductive body is not present. The slits of the detection electrode pattern of the touch detection electrodes extend in a direction different from an extending direction of the scanning signal lines with a slit pitch having a predetermined interval therebetween in the extending direction of the scanning signal lines. The slit pitch is multiples of a natural number of a predetermined pixel pitch in which the pixel electrodes are arranged.

Abstract: A horizontal cavity surface emitting laser device includes an active layer configured to generate light to be emitted in one direction along the one surface of a semiconductor substrate and in another direction opposite to the one direction. The device also includes a rear distributed Bragg reflector unit configured to reflect the light. The rear distributed Bragg reflector unit includes a waveguide layer configured to guide light and a distributed Bragg reflector configured to reflect the light in the waveguide layer. The device further includes an optical component configured to guide, in a direction different from the one direction and the other direction, the light emitted from an end of the rear distributed Bragg reflector unit in the one direction. The device further includes a front reflecting mirror configured to reflect the light emitted from the active layer in the other direction toward another surface side of the semiconductor substrate.

Abstract: A proximity detection device includes a display unit which has a display image surface in which a plurality of pixel electrodes are arranged in a matrix shape and a proximity operation detecting unit in which a transparent electrode for proximity operation detection is arranged to form an operation surface at a position superposed on the display image surface and a conductive film pattern forming the transparent electrode has a pitch of a linear pattern which is equal to or smaller than an arrangement pitch in one direction of the pixel electrodes.

Abstract: A method for controlling a power switching apparatus to solve problems including: setting a target time reaching a predetermined position immediately before a target phase by a time calculator during an opening and closing operation of a movable arc contact with respect to a fixed arc contact in a target phase at a predetermined average switching speed; and controlling an electric motor at a speed equal to or less than an average switching speed immediately before the target phase from an operation start time to the target time by a motor controller.