Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surrounding the quartz vessel and configured to excite a process gas by a plasma generated by supplying a high frequency power to the coil, wherein a distance between the coil and an outer peripheral surface of a first portion of the quartz vessel is set to be greater than a distance between the coil and an outer peripheral surface of a second portion of the quartz vessel, and wherein a silicon hydroxide film is formed on an inner peripheral surface of the first portion and the silicon hydroxide film is not formed on an inner peripheral surface of the second portion.

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: According to the present disclosure, there is provided a technique capable of repairing a damage due to a surface treatment of a metal material constituting a reaction vessel. According to one aspect of the technique of the present disclosure, there is provided a maintenance method including: (a) performing a substrate processing on a substrate arranged in a reaction vessel at a predetermined temperature by supplying a process gas to the substrate; and (b) performing an oxidation process of repairing a damage due to an alumite treatment on a surface of an aluminum material constituting at least a part of the reaction vessel at a temperature equal to or higher than the predetermined temperature by supplying an oxygen-containing gas into the reaction vessel in a state where there is no substrate in the reaction vessel.

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

Abstract: An exhaust gas purifier is disposed in an exhaust gas passage of an engine, and includes: a DPF for capturing PM contained in exhaust gas; an SCR catalyst provided downstream of the DPF in a direction of flow of the exhaust gas, and for reducing NOx contained in the exhaust gas for purification in the presence of NH3; an injection unit provided between the DPF and the SCR catalyst, and for supplying urea to the SCR catalyst so as to supply NH3 to the SCR catalyst; and an AMOX provided downstream of the SCR catalyst in the direction of flow of the exhaust gas, and for removing NH3 having passed through the SCR catalyst. The DPF does not contain Pt or Pd, and contains Rh. The AMOX contains Pt.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: An exhaust gas purifier is disposed in an exhaust gas passage of an engine, and includes: a DPF for capturing PM contained in exhaust gas; an SCR catalyst provided downstream of the DPF in a direction of flow of the exhaust gas, and for reducing NOx contained in the exhaust gas for purification in the presence of NH3; an inj ection unit provided between the DPF and the SCR catalyst, and for supplying urea to the SCR catalyst so as to supply NH3 to the SCR catalyst; and an AMOX provided downstream of the SCR catalyst in the direction of flow of the exhaust gas, and for removing NH3 having passed through the SCR catalyst. The DPF does not contain Pt or Pd, and contains Rh. The AMOX contains Pt.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

Abstract: An information processing apparatus, among a plurality of information processing apparatuses that performs parallel computing processing in a parallel computer system, including a memory and a processor coupled to the memory and configured to execute a process including: calculating a centroid position of the information processing apparatuses based on a data length of data for which subsequent reading or writing from or to a file server is requested by the information processing apparatuses and position information on each of the information processing apparatuses; determining a first information processing apparatus that performs data relay according to the calculated centroid position; and collectively receiving or transmitting, when the determined first information processing apparatus that performs data relay is the information processing apparatus, the data for two or more of the information processing apparatuses.

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

Abstract: A fluorescent probe for measurement of CYP3A activity, having an excellent CYP molecular species selectivity and detection sensitivity represented is represented by the following formula: In the formula, R1 represents a monovalent group, R2 represents a hydrogen atom or a monovalent group, R3 and R4 each independently represent a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group, R5 represents a monovalent group selected so that the ether bond of the O-benzyl moiety at the 6th position of the compound represented by formula (I) is oxidatively cleavable by the molecular species 3A of the cytochrome P-450, n represents an integer from 1 to 5, and when n is 2 or more, all or a part of the plurality of R5s may be the same as each other or different from each other.

Abstract: A catalyst 20 provided for a filter body for combusting PM contains activated aluminas 21 and 22, active-oxygen-release materials 23 and 24, catalytic metal 25, and alkali earth metal 26. The alkali earth metal 26 is loaded on each of the activated aluminas 21 and 22, and the active-oxygen-release materials 23 and 24. A percentage by mass of the alkali earth metal 26, loaded on the active-oxygen-release materials 23 and 24, to the active-oxygen-release material is smaller than a percentage by mass of the alkali earth metal 26, loaded on the activated aluminas 21 and 22, to the activated alumina.