Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: There is disclosed a thinner-layered radio wave absorber having high absorption performance for a high frequency electromagnetic wave. The radio wave absorber, even when having a magnetic layer of not more than 1 mm in thickness, achieves satisfactory absorption characteristics for the high frequency electromagnetic wave by adopting a structure that a conductor is fixedly attached to a face opposite to an electromagnetic-wave incident face of the magnetic layer of single-layered structure, and also arranging the magnetic layer to have values of a real part &mgr;′ and an imaginary part &mgr;″ of complex relative magnetic permeability of the magnetic layer satisfying an expression of &mgr;″≧m&mgr;′−n (m: real number of m>0, n: real number of n≧0) outside an impedance mismatching region.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: The present invention is a radio wave absorber having a high absorption performance for an electromagnetic wave of a high frequency and made thinner. The radio wave absorber comprises one or more magnetic layers including a magnetic material having a micro organization structure whose particle diameter is controlled to 1 to 100 nm. A radio wave absorbing sheet (2) comprises one magnetic layer formed by preparing as such a magnetic material including Fe, Co and Ni, which are ferromagnetic elements, or a material including an alloy containing Mn, as powder, and dispersing this powder into polymeric material and the like, and it has a radio wave absorption performance for a relatively near electromagnetic field.

Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing ectromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.

Abstract: There is disclosed a thinner-layered radio wave absorber having high absorption performance for a high frequency electromagnetic wave. The radio wave absorber, even when having a magnetic layer of not more than 1 mm in thickness, achieves satisfactory absorption characteristics for the high frequency electromagnetic wave by adopting a structure that a conductor is fixedly attached to a face opposite to an electromagnetic-wave incident face of the magnetic layer of single-layered structure, and also arranging the magnetic layer to have values of a real part &mgr;′ and an imaginary part &mgr;″ of complex relative magnetic permeability of the magnetic layer satisfying an expression of &mgr;″≧m&mgr;′−n (m: real number of m>0, n: real number of n≧0) outside an impedance mismatching region.

Abstract: A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line is connected to a first end of the first tunnel junction portion. A second data line is connected to the first end of the second tunnel junction portion. A bit line is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.

Abstract: The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or “memory” element and magnetic reading head each using the tunnel effect element A first concept of the present invention lies in provision of a magnetic element characterized by comprising first and second ferromagnetic layers 1, 5 and a layer of semiconductor particles 3 neighboring the first ferromagnetic layer 1 with a first tunnel barrier 2 disposed between them and also neighboring the second ferromagnetic layer 5 with a second tunnel barrier 4 laid therebetween.

Abstract: A magnetic element which has a laminate film composed of ferromagnetic-dielectric mixed layer and dielectric layer laminated alternately, said ferromagnetic-dielectric mixed layer being a mixture of a ferromagnetic material having coercive force and a dielectric material, with the volume of the former being equal to or larger than that of the latter. The ferromagnetic-dielectric mixed layer 3 has the ferromagnetic layer 1 which is arranged close thereto with a dielectric layer interposed between them. Tunnel current flows between the ferromagnetic-dielectric mixed layer. The magnetic layer with a smaller coercive force has its spin switched so that the magnetoresistance effect is produced. The magnetic element having a ferromagnetic tunnel junction is designed such that the rate of change in magnetoresistance increases and the resistance of the element decreases and the rate of change in magnetoresistance varies less depending on voltage.

Abstract: There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Abstract: A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line is connected to a first end of the first tunnel junction portion. A second data line is connected to the first end of the second tunnel junction portion. A bit line is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.

Abstract: A semiconductor device according to the invention is constructed as below. A charge accumulating layer which contains a magnetic substance is formed directly on a semiconductor substrate, and a gate insulating film is formed on the charge accumulating layer. Further, a gate electrode is formed on the gate insulating film, and source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween. Another semiconductor device according to the invention is constructed as below. A first gate insulating film formed on a semiconductor substrate, and a charge accumulating layer which contains a magnetic substance is formed on the first gate insulating film. Further, a second gate insulating film is formed on the charge accumulating layer, and a gate electrode is formed on the second gate insulating film. Source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.

Abstract: A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.