Abstract: A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner portion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.

Abstract: A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner potion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.

Abstract: The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.

Abstract: Filter circuitry is provided with a series element and a parallel element. The filter circuitry transmits signals that fall within a certain passband and attenuates signals that don't fall within the certain passband. The series element is comprised of a resonance element having antiresonance characteristics, and the parallel element is comprised of a series circuit including an inductor and a capacitor.

Abstract: A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

Abstract: Filter circuitry is provided with a series element and a parallel element. The filter circuitry transmits signals that fall within a certain passband and attenuates signals that don't fall within the certain passband. The series element is comprised of a resonance element having antiresonance characteristics, and the parallel element is comprised of a series circuit including an inductor and a capacitor.

Abstract: There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34° to 41° from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.

Abstract: An elastic wave element including a piezoelectric member, at least one electrode which is formed on the piezoelectric member, a corrosion-resistant layer which is formed on a surface of the electrode, a hydrophilic film which is formed on the corrosion-resistant layer and a dielectric film which is formed on the hydrophilic film, in which the corrosion-resistant layer is made is made of a compound of a material of the electrode and the hydrophilic film is made of a material having higher hydrophilic nature than that of the dielectric film such that the corrosion-resistant layer, the hydrophilic film and the dielectric film prevent erosion of the electrode by atmospheric water content.

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: In an elastic wave device in which electrodes including interdigital transducers 4 and 5 made of a conductive material are formed on a piezoelectric substrate 1, a dielectric thin film 8 including silicon oxide as its main component is deposited on the interdigital transducers 4 and 5 and a reflector 9 and the thickness of this dielectric thin film 8 is appropriately set. By appropriately setting the thickness of the dielectric thin film 8, it becomes possible to obtain an elastic wave device that is not required to be hermetically sealed in a package for the sake of protecting the electrodes from minute metallic dusts and avoiding influences from the outside.

Abstract: In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Abstract: A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic. The cut-off frequency of a second top electrode portion piezoelectric film having a large mass load can be lower than the cut-off frequency of a first top electrode portion piezoelectric film, to thereby trap the energy of the acoustic wave in a region of the first top electrode portion side, so that good performance may be feasible.

Abstract: A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic.

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.

Abstract: In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Abstract: A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Abstract: A detecting device for detecting a physical quantity of an object, which includes a transmission signals generating device for generating first and second transmission signals of different frequencies, an ultrasonic wave transmission device that is excited by the first and the second transmission signal, for transmitting ultrasonic pulses corresponding to the first and the second transmission signal to an object, and a signal processing device for carrying out a signal processing process on the first and the second echo. The signal processing process is such that it detects phases of the first and second echo corresponding to the first and second transmission signal, which are received by the ultrasonic wave receiving device. An indeterminacy integer times as large as 2.pi.

Abstract: Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.

Abstract: An ultrasonic detecting apparatus which includes a sequence generating means and a transmission signal generating means for generating a transmission signal corresponding to the sequence. The detecting apparatus also includes a transmitting means to transmit waves, which may be ultrasonic waves, to an object and a receiving means for receiving an echo corresponding to the transmission signal. A correlation operation means performs a correlation operation with respect to the echo. In another general aspect, the sequence generating means may generate more than one sequence, some of whose auto-correlation functions produce substantially zero sidelobe in the summed result. In a further general aspect, the sequence generating means generates two or more sequences, with each of the sequences being different from the others and having substantially the same auto-correlation function as the others.