Abstract: An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

Abstract: Disclosed is a process for forming a patterned copper layer on a substrate, using a patterned photoresist layer for forming the patterned copper layer. Etching mask and anti-oxidizing layers are formed on a copper layer (from which the patterned copper layer is formed) prior to forming the patterned photoresist layer. The uppermost one of the etching mask and anti-oxidizing layers is etched using the patterned photoresist layer as a mask, and then the patterned photoresist layer is removed, by oxygen plasma treatment, with the copper layer covered by the lower one of the etching mask and anti-oxidizing layers. By removing the patterned photoresist layer, by oxygen plasma treatment, while the copper layer is covered, oxidation of the copper layer during the oxygen plasma treatment can be avoided. The patterned copper layer can be an interconnection or wiring of a semiconductor device, formed on a semiconductor substrate having semiconductor elements therein.

Abstract: A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.

Abstract: A photomask comprises a transparent film of conductive material and a light shielding film of predetermined pattern on a transparent substrate. The pattern film is made of a metallic element having its atomic number not smaller than 25 or a composition containing the metallic element. The photomask structure is suited to the case where the pattern formed on the mask is inspected with an electron beam. With the mask structure, the contrast of a pattern related information signal (backscattered electrons, secondary electrons, absorption current, etc.) derived from the mask upon irradiation thereof with the electron beam is improved.

Abstract: A method of treating a photo mask comprising preparing the photo mask which has a conductive transparent substance on a major surface of an insulating substrate and which is formed with a mask pattern of an opaque substance on the conductive transparent substance, and irradiating the mask with an electron beam to inspect and/or retouch said mask.

Abstract: A method is disclosed in which an object picture such as an integrated circuit pattern is precisely and exactly detected at high speed by the use of an electron beam. At least two kinds of signals obtained by irradiating an object with an electron beam are detected and subjected to an adding/subtracting operation and a resulting signal is used to detect the object picture. Thus, a satisfactory S/N ratio can be obtained. The method is applicable to the inspection of a mask used for integrated circuits.