Abstract: A method of manufacturing a semiconductor device has the steps of: forming a wiring pattern by dry etching a wiring layer on a semiconductor substrate, using a resist pattern as a mask; immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching; then, processing the wiring pattern with fluid not containing amine and being capable of removing deposition residues; forming a conformal insulating layer on the processed wiring pattern; and forming an insulating layer having a planarizing function on the conformal insulating layer by CVD. This method is suitable for multi-layer wiring, and can form an interlayer insulating film having a satisfactory planarizing function.