Abstract: A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between the wiring layer having a bonding pad and the lower wiring layer rarely corrodes or becomes disconnected.

Abstract: A semiconductor integrated circuit device comprises at least a transistor comprising a semiconductor substrate including at least a single collector region of a first conductivity type, a plurality of base regions of a second conductivity type formed in the collector region, and emitter regions of the first conductivity type respectively formed in the base regions of the second conductivity type. The second conductivity type base regions are electrically connected in common with one another and the first conductivity type emitter regions are electrically connected in common with one another. A multilayer interconnection structure is employed so that the density of integration of the semiconductor integrated circuit device is high.