Abstract: A vehicle skeleton structure includes: a support surface portion that configures a part of a vehicle body, the support surface portion being disposed further toward a vehicle lower side than a design surface of a roof portion of the vehicle body, and the support surface portion being configured to support a communication device from a vehicle lower side of the communication device; and a roof reinforcement that is disposed at a vehicle lower side of the support surface portion, the roof reinforcement configuring at least a part of a closed cross-sectional structure extending in a vehicle width direction and having a closed cross-sectional shape as viewed from the vehicle width direction.

Abstract: A vehicle skeleton structure including: a roof reinforcement that configures a part of a roof section of a vehicle body, the roof reinforcement extending in a vehicle width direction, the roof reinforcement having a closed cross-sectional shape when viewed from the vehicle width direction, the roof reinforcement being configured such that a communication device capable of at least one of sending or receiving of radio waves can be disposed at an inner side thereof, and a penetrating section being formed at a portion at a vehicle upper side of the roof reinforcement; and a lid member that closes off the penetrating section, the lid member being configured by a material capable of transmitting radio waves.

Abstract: Provided is a learning processor including a base characteristic acquiring section that acquires base characteristic data indicating a characteristic of a base layer serving as a base on which a film is to be deposited by a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of the film deposited on the base layer by the film deposition apparatus; and a first learning processing section that performs learning processing of a first model that outputs predicted film characteristic data obtained by predicting a characteristic of a film to be deposited by the film deposition apparatus based on targeted base characteristic data indicating a characteristic of a base layer serving as a target for formation of the film, using learning data that includes the base characteristic data and the film characteristic data.

Abstract: Provided is a learning processor including a base characteristic acquiring section that acquires base characteristic data indicating a characteristic of a base layer serving as a base on which a film is to be deposited by a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of the film deposited on the base layer by the film deposition apparatus; and a first learning processing section that performs learning processing of a first model that outputs predicted film characteristic data obtained by predicting a characteristic of a film to be deposited by the film deposition apparatus based on targeted base characteristic data indicating a characteristic of a base layer serving as a target for formation of the film, using learning data that includes the base characteristic data and the film characteristic data.

Abstract: Upright bead sections extending in a door vertical direction and having recessed shapes indented toward a vehicle cabin inside are formed at the two vehicle width direction end portions of a resin door inner panel. Side reinforcement portions of metal hinge reinforcements are disposed inside the recessed shapes of the upright bead sections, and extend in the door vertical direction. The side reinforcement portions include bent plate portions having bent plate shapes running along locations of the upright bead sections from the outside sidewall portions to recessed bottom wall portions. The side reinforcement portions are each joined to the respective outside sidewall portion through an adhesive layer, and are each joined to the respective recessed bottom wall portion through an adhesive layer.

Abstract: Upright bead sections extending in a door vertical direction and having recessed shapes indented toward a vehicle cabin inside are formed at the two vehicle width direction end portions of a resin door inner panel. Side reinforcement portions of metal hinge reinforcements are disposed inside the recessed shapes of the upright bead sections, and extend in the door vertical direction. The side reinforcement portions include bent plate portions having bent plate shapes running along locations of the upright bead sections from the outside sidewall portions to recessed bottom wall portions. The side reinforcement portions are each joined to the respective outside sidewall portion through an adhesive layer, and are each joined to the respective recessed bottom wall portion through an adhesive layer.

Abstract: Provided is an infrared light emitting device in which dark current and diffusion current caused by thermally excited holes are suppressed. Thermally excited carriers (holes) generated in a first n-type compound semiconductor layer (102) tend to diffuse in the direction of a ? layer (105). But, the dark current by holes is reduced by providing an n-type wide band gap layer (103) with a larger band gap than the first layer (102) and the ? layer (105) that suppresses the hole diffusion between the first layer (102) and the ? layer (105). The wide band gap layer (103) has a band gap shifted relatively to valence band direction by n-type doping and thereby more effectively functions as a diffusion barrier for the thermally excited holes. Namely, the band gap and n-type doping of the wide band gap layer (103) are adjusted to suppress diffusion of the thermally excited carriers.

Abstract: Provided is an infrared light emitting device in which dark current and diffusion current caused by thermally excited holes are suppressed. Thermally excited carriers (holes) generated in a first n-type compound semiconductor layer (102) tend to diffuse in the direction of a ? layer (105). But, the dark current by holes is reduced by providing an n-type wide band gap layer (103) with a larger band gap than the first layer (102) and the ? layer (105) that suppresses the hole diffusion between the first layer (102) and the ? layer (105). The wide band gap layer (103) has a band gap shifted relatively to valence band direction by n-type doping and thereby more effectively functions as a diffusion barrier for the thermally excited holes. Namely, the band gap and n-type doping of the wide band gap layer (103) are adjusted to suppress diffusion of the thermally excited carriers.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.