Abstract: A vehicular lamp includes a lamp body having an opening opened in the front side of the lamp; a cover that covers the opening; an irradiation unit mounted inside a lamp chamber formed by the lamp body and the cover, and configured to irradiate light emitted from a light source to the front side of the lamp; a rotation mechanism provided with a shaft portion installed on one of the irradiation unit and the lamp body and extending in a horizontal direction, and a bearing portion installed on the other and configured to support the shaft portion, the rotation mechanism being configured to enable the irradiation unit to rotate about a horizontal axis with regard to the lamp body; and a positioning mechanism configured to position the irradiation unit at a predetermined position within a range of possible rotation about the horizontal axis.

Abstract: Provided is a vehicular lamp that includes a light source and a light guide that guides a light from the light source in the inside thereof. The light guide is formed by an injection molding, and a plurality of reflective elements spaced from each other are formed in the rear surface of the light guide. Each of the reflective elements is formed to protrude from the rear surface of the light guide toward the rear side, and the inner surface of each of the reflective elements internally reflects the light from the light source toward the front surface of the light guide.

Abstract: In a plate-shaped fluorescent member configured to convert the wavelength of the light emitted by a semiconductor light emitting element, the fluorescent member is formed of an inorganic material having a refractive index of 1.5 or more and a light transmittance at the emission peak wavelength of the semiconductor light emitting element of less than 20%. A concave portion is formed, of the surfaces of the fluorescent member, on the surface on the side where the light in the semiconductor light emitting element is mainly emitted. In the fluorescent member, the light transmittance of the light having a wavelength of 380 nm to 500 nm may be less than 20%. The concave portion may be a groove. The concave portion may be a plurality of holes that are scattered.

Abstract: Provided is a light emitting module in which an LED device is mounted and power is supplied to the LED device by a gold wire. The light emitting module includes a first resin (sealing material) that seals the gold wire and a second resin (dam wall) that surrounds at least a portion of the outer peripheral of the first resin. The first resin has a lower viscosity and a lower elastic modulus compared to the second resin, and protects the gold wire mechanically and chemically. The second resin suppresses the first resin from being flowed out toward the peripherals, and, as a result, the sealing state of the gold wire by the first resin may be maintained.

Abstract: A light emitting module includes: an LED chip; a plate-shaped phosphor layer that is provided so as to face the light emitting surface of the LED chip and is configured to convert the wavelength of the light emitted by the LED chip; and a filter layer that is formed, of the surfaces of the phosphor layer, on at least one of the surface that faces the LED chip and the side surface, and that is configured to transmit the light emitted from the LED chip and to reflect the light whose wavelength has been converted by the phosphor layer. The filter layer is formed such that a ratio of the energy of the emitted light within a range of ±60° with respect to the front direction to the total energy of emitted light is 80% or more.

Abstract: In a light emitting module, a semiconductor light emitting element is mounted on a mounting board. A plated layer is provided on the surface of the mounting board so as to be electrically connected to the semiconductor light emitting element mounted on the mounting board. The plated layer has a power feeding portion and an element connection portion. The power feeding portion extends, of the surfaces of the mounting board, from the upper surface on which the semiconductor light emitting element is to be mounted to a stepped surface located below the upper surface, so that power can be fed, on the stepped surface, to the semiconductor light emitting element. The element connection portions are provided on the upper surface such that a plurality of the semiconductor light emitting elements mounted on the upper surface are connected together in series.

Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.

Abstract: An illumination device includes a light-emitting device and a diffusion member. The light-emitting device has a plurality of light-emitting elements that emit light having a peak wavelength in a wavelength region of 380 to 420 nm, a first phosphor that emits visible light having a peak wavelength in a wavelength region of 560 to 600 nm, a second phosphor that is excited by ultraviolet ray or short-wavelength visible light and emits visible light in complementary color relationship with the visible light emitted by the first phosphor, and a light-transmitting member that covers the plurality of light-emitting elements and contains the first phosphor and the second phosphor dispersed therein. The diffusion member diffuses at least a part of the light emitting from the light-emitting device.