Abstract: Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: According to the present disclosure, there is provided an imaging device including: a first semiconductor layer (180) formed on a semiconductor substrate; a second semiconductor layer (170) formed on the first semiconductor layer (180) and having an opposite conductivity type to the first semiconductor layer (180); a pixel separation portion (150) configured to demarcate a pixel region including the first semiconductor layer (180) and the second semiconductor layer (170); a first electrode (130) connected to the first semiconductor layer (180) from one surface side of the semiconductor substrate; and a metal layer (152) connected to the second semiconductor layer (170) from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion (150) in at least a part of the semiconductor substrate in a thickness direction.

Abstract: [Object] To make it possible to acquire a plurality of physical features for use in biometric authentication with a compact housing. [Solution] Provided is an imaging device including: a light source configured to radiate light in at least two different wavelength bands; and an imaging element configured to acquire signals individually from the light in two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: A semiconductor memory device includes a smaller number of elements. A method for reading stored data within the semiconductor memory device suppresses the reduction in the static noise margin accompanying a voltage drop of a power supply voltage, and improves the degree of integration of the circuit.

Abstract: A method of reading stored data in a semiconductor memory device able to suppress the reduction in the static noise margin accompanying a voltage drop of a power supply voltage, and able to improve the degree of integration of the circuit, that is, a method of reading stored data of a semiconductor memory device which has a first storage node and a second storage node, a first transistor having a control terminal connected to the first storage node and having a pair of input/output terminals connected between the second storage node and a reference potential, a second transistor having a control terminal connected to the second storage node and having a pair of input/output terminals connected between the first storage node and the reference potential, a third transistor having a pair of input/output terminals connected between the first storage node and a first bit line and having a control terminal connected to a word line, and a fourth transistor having a pair of input/output terminals connected between th