Abstract: The superconducting memory device comprises a thin type-II superconductor film for storing an Abrikosov vortex, a write control line for generating the vortex in the superconductor film, and a vortex detector for detecting a polarity of the vortex stored in the film. The vortex detector includes a Josephson junction and a read control current line. The Josephson junction comprises a base electrode, a counter electrode and a tunnel barrier region sandwiched between the base electrode and the counter electrode. By utilizing a fact that a shift direction of the threshold characteristics of the vortex detector corresponds to the polarity of the vortex stored in the superconductor film, a flux crossing the tunnel barrier region of the Josephson junction due to the stored vortex is detected by the read control line.