Abstract: A novel treatment method, for improving fatigue life, is provided that aims to resolve problems associated with conventional treatment methods for improving fatigue life of metal by reduction of stress concentration and conventional treatment methods for improving fatigue life of metal by introduction of compressive stress, that is, problems of poor efficiency in work execution, required level of skill of workers, and the impossibility of quality control due to lack of means for measuring the effect after treatment, characterized in that, for locations in metal for which fatigue is a problem, after pre-treatment is performed, ultrasonic impact treatment is performed, and thereafter, a quality assurance test is performed so as to improve the fatigue life of the metal.

Abstract: A wafer supporting unit (10) includes a base (12) and a thermally conductive member (14). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber (16) serving as the main material, and Ag fine powder (18) is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions (20) is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Abstract: A plasma processing apparatus and method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O2 (oxygen) gas, and the volume ratio of the O2 (oxygen) gas to the SF6 gas is in a range from 11% to 25%.

Abstract: A novel treatment method, for improving fatigue life, is provided that aims to resolve problems associated with conventional treatment methods for improving fatigue life of metal by reduction of stress concentration and conventional treatment methods for improving fatigue life of metal by introduction of compressive stress, that is, problems of poor efficiency in work execution, required level of skill of workers, and the impossibility of quality control due to lack of means for measuring the effect after treatment, characterized in that, for locations in metal for which fatigue is a problem, after pre-treatment is performed, ultrasonic impact treatment is performed, and thereafter, a quality assurance test is performed so as to improve the fatigue life of the metal.

Abstract: The present invention relates to a method of conveying a substrate that can convey even a thinned substrate while maintaining its flatness and prevents particles from adhering to the substrate, wherein the step of a conveyor attaching a third substrate holding mechanism to the substrate with a first substrate holding mechanism holding the substrate, the step of driving the third substrate holding mechanism so as to hold the substrate by the conveyor while a first base is holding the substrate, and thereafter canceling the holding of the substrate by the first substrate holding mechanism and jetting out fluid from a first fluid jetting mechanism, the step of conveying the substrate from the first base to a second base and attaching the substrate to a second substrate holding mechanism, and the step of driving the second substrate holding mechanism so as to hold the substrate by the second base while the third base is holding the substrate, and thereafter jetting out fluid from a second fluid jetting mechanism

Abstract: A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a second slit-shaped exhaust opening provided one on each side of the substrate-to-be-processed approximately perpendicular to the flow of the first processing gas and the second processing gas, countering the first processing gas supply unit and the second processing gas supply unit, respectively. The first processing gas is passed along the surface of the substrate-to-be-processed from the first processing gas supply unit to the first exhaust opening, and is adsorbed by the surface of the substrate-to-be-processed.

Abstract: A wafer supporting unit is disclosed that does not produce curvature in a wafer, that provides efficient cooling of the wafer, and that does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Abstract: A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

Abstract: The present invention provides a method and an equipment for plasma treatment under the atmospheric pressure for treating an article to be treated comprising: providing a solid dielectric on at least one opposing face of a pair of opposing electrodes under a pressure near the atmospheric pressure; introducing a treatment gas between said a pair of opposing electrodes; generating plasma by applying an electric field between said electrodes; and contacting said plasma with said article to be treated, wherein an used gas is exhausted from the vicinity of treatment section where said plasma and said article to be treated are in contact, and said vicinity of treatment section is maintained under a specified gas atmosphere by a gas atmosphere control mechanism.

Abstract: A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a second slit-shaped exhaust opening provided one on each side of the substrate-to-be-processed approximately perpendicular to the flow of the first processing gas and the second processing gas, countering the first processing gas supply unit and the second processing gas supply unit, respectively. The first processing gas is passed along the surface of the substrate-to-be-processed from the first processing gas supply unit to the first exhaust opening, and is adsorbed by the surface of the substrate-to-be-processed.

Abstract: A plasma processing apparatus and a plasma processing method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O2 (oxygen) gas, and the volume ratio of the O2 (oxygen) gas to the SF6 gas is in a range from 11% to 25%.

Abstract: A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

Abstract: A sensor for electrochemical measurement is disclosed which includes a chamber made of an electrically insulative material and having an open end portion, a super absorbent polymer material filled in the chamber and absorbing at a selected rate a liquid electrolyte, an electrode disposed in the chamber, and a screen which covers the open end portion of the chamber and which prevents the super absorbent polymer material from dropping out from the chamber but permits the liquid electrolyte to transmit through the screen. A method is also disclosed which uses the sensor to measure the degree of degradation of a coating film on metal or the corrosion protective properties of a rust film created on the surface of steel.

Abstract: A heat exchanger having corrugated fins interposed between adjacent folds of a liquid tube, which corrugated fins severally contain in each of the holds thereof a louver having louver blades alternately projected from the base line of fin and having at least part of said louver blades so arranged that the states of inclination thereof relative to said base line of fin vary alternately.