Abstract: A current sensor and so forth are provided capable of detecting an overcurrent of a wiring line and disconnecting the wiring line while reducing layout space and cost. A current detection part detecting a current flowing through the wiring line, a disconnection mechanism disconnecting the wiring line, and a drive circuit driving the disconnection mechanism are included in the same housing. A current detection circuit included in the current detection part and the drive circuit are placed on the same substrate.

Abstract: The present invention comprises side members (15), which are vehicular skeleton members of a hybrid vehicle (10); a front cross member (18) for connecting the two side members (15); spring supports (16) connected to the side members (15); an auxiliary battery arranged further towards the vehicle front relative to a PCU (13) and attached to the front cross member (18) via a support platform (23) and a securing piece (22); a radiator (17) attached to the front cross member (18); a motor case (12) and an engine (11) connected to the vehicular skeleton member via an engine mount; an axle (25) extending from the motor case (12); and a PCU (13) connected to the motor case (12) via a guide plate (19) and a linkage bolt. Thus, there is provided a vehicular instrument-mounting structure capable of inhibiting collision of a power control device or other vehicle-mounted instrument with another member, and inhibiting damage caused to the power control device or other vehicle-mounted instrument during a vehicle collision.

Abstract: A technology for mitigating a collision impact applied to a power controller positioned in a front compartment is provided. An automobile has a power controller and device in the front compartment. The power controller and the device are positioned side by side in an automobile lateral direction. A corner or protrusion of the power controller faces a lateral surface of the device. When the automobile collides with an obstacle, the lateral surface of the device comes into contact with the corner of the power controller. Because the lateral surface of the device is weaker than the corner of the power controller, the device breaks first. The device functions as a cushioning material to mitigate damage suffered by the power controller.

Abstract: A technology for mitigating a collision impact applied to a power controller positioned in a front compartment is provided. An automobile has a power controller and device in the front compartment. The power controller and the device are positioned side by side in an automobile lateral direction. A corner or protrusion of the power controller faces a lateral surface of the device. When the automobile collides with an obstacle, the lateral surface of the device comes into contact with the corner of the power controller. Because the lateral surface of the device is weaker than the corner of the power controller, the device breaks first. The device functions as a cushioning material to mitigate damage suffered by the power controller.

Abstract: Provided is an improved cooler-integrated semiconductor module. A semiconductor module (100) includes a plurality of cooling plates (12), and a plurality of flat-plate semiconductor packages (5) and flat-plate device packages (2). The semiconductor packages (5) each include a semiconductor element housed therein. The device packages (2) each include an electronic component housed therein, the electronic component being different in type from the semiconductor element housed in the semiconductor elements. The cooling plates (12) are laminated alternately with the semiconductor packages (5) or the device packages (2). Connecting tubes (13a, 13b) having refrigerant flowing therein are provided between the cooling plates (12) adjacent to each other.

Abstract: A vehicle equipment mounting structure that arranges a motor case, in which a rotary electric machine that drives a vehicle is housed, in an engine compartment, and that includes a PCU that controls the rotary electric machine, and an auxiliary battery that supplies electric power to the PCU. This structure includes a fixing portion that fixes the PCU onto the motor case, and a connecting portion that connects the auxiliary battery to a side member that absorbs an impact load by being crushed in a crushing direction. The connecting portion has a displaceable member that is displaceable in the crushing direction. The auxiliary battery is arranged on a vehicle front side of the PCU such that the PCU and the auxiliary battery partially overlap in the crushing direction. The auxiliary battery is arranged so as to be able to move past the PCU in response to an impact load.

Abstract: The present invention comprises side members (15), which are vehicular skeleton members of a hybrid vehicle (10); a front cross member (18) for connecting the two side members (15); spring supports (16) connected to the side members (15); an auxiliary battery arranged further towards the vehicle front relative to a PCU (13) and attached to the front cross member (18) via a support platform (23) and a securing piece (22); a radiator (17) attached to the front cross member (18); a motor case (12) and an engine (11) connected to the vehicular skeleton member via an engine mount; an axle (25) extending from the motor case (12); and a PCU (13) connected to the motor case (12) via a guide plate (19) and a linkage bolt. Thus, there is provided a vehicular instrument-mounting structure capable of inhibiting collision of a power control device or other vehicle-mounted instrument with another member, and inhibiting damage caused to the power control device or other vehicle-mounted instrument during a vehicle collision.

Abstract: The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.

Abstract: The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.

Abstract: A semiconductor device is provided with a main electrode of main switching elements region, a sensor electrode of sensor switching elements region, and a protective device formed between the main electrode and the sensor electrode. The protective device electrically connects the main electrode and the sensor electrode when a predetermined potential difference is produced between the main electrode and the sensor electrode. The semiconductor device can handle excessive voltage such as ESD generated between the sensor electrode and the gate electrode while simultaneously preventing gate drive loss from increasing.

Abstract: The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p? type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n? type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

Abstract: The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p? type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n? type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

Abstract: A semiconductor device is provided with a main electrode of main switching elements region, a sensor electrode of sensor switching elements region, and a protective device formed between the main electrode and the sensor electrode. The protective device electrically connects the main electrode and the sensor electrode when a predetermined potential difference is produced between the main electrode and the sensor electrode. The semiconductor device can handle excessive voltage such as ESD generated between the sensor electrode and the gate electrode while simultaneously preventing gate drive loss from increasing.

Abstract: The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.

Abstract: The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.

Abstract: In an auto-tensioner, a damping device is used to control a fluid communication between a first fluid chamber and a second chamber for adjusting an engagement of an idler pulley with a belt-shaped power transmission member in such a manner that when a tension thereof is decreased, a quick propulsive movement of the idler pulley to the belt-shaped power transmission member is allowed by the first urging member, while when the tension is increased, the idler pulley is retracted gradually from the belt-shaped power transmission member by a registration of the belt-shaped power transmission member.

Abstract: A valve gear device includes a stem having one end and the other end, an intake and exhaust valve connected to the other end of the stem and serving for opening and closing a port formed in a cylinder block of an internal combustion engine, a first spring biasing the stem toward a closing condition of the intake and exhaust valve, a cam, and a valve control device interposed between the cam and one end of the stem, the valve control device having a first member fitted in the cylinder block so as to be slidable along an axis of the stem and engaged with the cam, a second member receiving one end of the stem and movable within the first member relative thereto and a regulating device for permitting and preventing the movement of the second member relative to the first member. Such a structure enables that the top end of the stem is out of sliding engagement with any of related members, thereby preventing a friction wear of the top end of the stem.

Abstract: For minimizing a diameter of an apparatus which is located on the cam-shaft and changes a phase between two cam-shafts, a variable valve timing system in an engine having first and second cam-shafts is comprised of a first gear rotatably supported on the first cam-shaft, a second gear fixed to the second cam-shaft, and geared with the first gear to transmit torque to the second cam-shaft, a first device for transmitting torque from the first cam-shaft to the first gear, and for rotating the first gear toward a first position, the first device being located on one end of the first cam-shaft, and a second means for rotating the first gear in a second direction opposite the first direction, toward a second position, the second device being located on one end of the second cam-shaft.

Abstract: A variable valve timing system comprises a first timing member driven by the engine, a second timing member rotatably fixed to the crankshaft, a helical device engaged between the first and second timing members and including a piston movable for adjusting an angular position between the first and second timing members, a hydraulic circuit device for selectively applying a hydraulic pressure to the piston for selectively moving the piston to adjust the angular position, a damper device on the first and second timing members for hydraulically damping rotational vibrations between the first timing member and the second timing member, and a notch formed at least on one of the first timing member and the second timing member in the damper device. Torque variations applied to the second timing member relative so the first timing member do not cause a change in the angular position.

Abstract: A variable valve timing system includes a first timing member driven by the engine, a second timing member rotatably fixed to the crankshaft, a helical device engaged between the first and second timing members and including a piston movable for adjusting an angular position between the first and second timing members, a hydraulic circuit device for selectively applying a hydraulic pressure to the piston for selectively moving the piston to adjust the angular position, and a damper device on the first and second timing members for hydraulically damping rotational vibrations between the first timing member and the second timing member. The damper device includes the first timing member, a ring-member engaged with the second timing member and a viscous fluid between the first timing member and the ring-member.