Patents by Inventor Koji Ibi

Koji Ibi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SUBSTRATE PROCESSING APPARATUS AND FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
    Publication number: 20120231553
    Abstract: A substrate processing apparatus includes a processing vessel evacuated by an evacuation system and including therein a stage for holding thereon a substrate to be processed, the processing vessel defining therein a processing space, a processing gas supply path that introduces an etching gas into the processing vessel, a plasma source that forms plasma in the processing space, and a high-frequency source connected to the stage. The processing vessel includes therein a shielding plate dividing the processing space into a first processing space part including a surface of the substrate to be processed and a second processing space part corresponding to a remaining part of the processing space, wherein the shielding plate is formed with an opening having a size larger than a size of the substrate to be processed.
    Type: Application
    Filed: May 24, 2012
    Publication date: September 13, 2012
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Yoichi OKITA, Koji IBI, Minoru Suzuki, Yuuichi Tachino
  • Plasma etching method and apparatus
    Patent number: 7906033
    Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: March 15, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Yuuichi Tachino, Minoru Suzuki, Koji Ibi, Genichi Komuro, Yoichi Okita
  • Substrate processing apparatus and fabrication process of a semiconductor device
    Publication number: 20070178698
    Abstract: A substrate processing apparatus includes a processing vessel evacuated by an evacuation system and including therein a stage for holding thereon a substrate to be processed, the processing vessel defining therein a processing space, a processing gas supply path that introduces an etching gas into the processing vessel, a plasma source that forms plasma in the processing space, and a high-frequency source connected to the stage. The processing vessel includes therein a shielding plate dividing the processing space into a fist processing space part including a surface of the substrate to be processed and a second processing space part corresponding to a remaining part of the processing space, wherein the shielding plate is formed with an opening having a size larger than a size of the substrate to be processed.
    Type: Application
    Filed: July 24, 2006
    Publication date: August 2, 2007
    Applicant: FUJITSU LIMITED
    Inventors: Yoichi Okita, Koji Ibi, Minoru Suzuki, Yuuichi Tachino
  • Plasma etching method and apparatus
    Publication number: 20050252885
    Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
    Type: Application
    Filed: June 29, 2005
    Publication date: November 17, 2005
    Applicant: Fujitsu Limited
    Inventors: Yuuichi Tachino, Minoru Suzuki, Koji Ibi, Genichi Komuro, Yoichi Okita
  • Plasma etching method and apparatus
    Patent number: 6926800
    Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
    Type: Grant
    Filed: February 5, 2001
    Date of Patent: August 9, 2005
    Assignee: Fujitsu Limited
    Inventors: Yuuichi Tachino, Minoru Suzuki, Koji Ibi, Genichi Komuro, Yoichi Okita
  • Plasma etching method and apparatus
    Publication number: 20020023896
    Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
    Type: Application
    Filed: February 5, 2001
    Publication date: February 28, 2002
    Inventors: Yuuichi Tachino, Minoru Suzuki, Koji Ibi, Genichi Komuro, Yoichi Okita